JPWO2021019334A5 - - Google Patents

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Publication number
JPWO2021019334A5
JPWO2021019334A5 JP2021536436A JP2021536436A JPWO2021019334A5 JP WO2021019334 A5 JPWO2021019334 A5 JP WO2021019334A5 JP 2021536436 A JP2021536436 A JP 2021536436A JP 2021536436 A JP2021536436 A JP 2021536436A JP WO2021019334 A5 JPWO2021019334 A5 JP WO2021019334A5
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JP
Japan
Prior art keywords
insulator
conductor
contact
top surface
semiconductor device
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JP2021536436A
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English (en)
Japanese (ja)
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JPWO2021019334A1 (https=
JP7581205B2 (ja
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Priority claimed from PCT/IB2020/056540 external-priority patent/WO2021019334A1/ja
Publication of JPWO2021019334A1 publication Critical patent/JPWO2021019334A1/ja
Publication of JPWO2021019334A5 publication Critical patent/JPWO2021019334A5/ja
Priority to JP2024190331A priority Critical patent/JP7741277B2/ja
Application granted granted Critical
Publication of JP7581205B2 publication Critical patent/JP7581205B2/ja
Priority to JP2025146875A priority patent/JP2025183282A/ja
Active legal-status Critical Current
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JP2021536436A 2019-07-26 2020-07-13 半導体装置 Active JP7581205B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024190331A JP7741277B2 (ja) 2019-07-26 2024-10-30 半導体装置
JP2025146875A JP2025183282A (ja) 2019-07-26 2025-09-04 半導体装置

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2019138038 2019-07-26
JP2019138038 2019-07-26
JP2019141556 2019-07-31
JP2019141556 2019-07-31
JP2019170999 2019-09-20
JP2019170999 2019-09-20
JP2020081763 2020-05-07
JP2020081763 2020-05-07
PCT/IB2020/056540 WO2021019334A1 (ja) 2019-07-26 2020-07-13 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024190331A Division JP7741277B2 (ja) 2019-07-26 2024-10-30 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021019334A1 JPWO2021019334A1 (https=) 2021-02-04
JPWO2021019334A5 true JPWO2021019334A5 (https=) 2023-07-24
JP7581205B2 JP7581205B2 (ja) 2024-11-12

Family

ID=74230166

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021536436A Active JP7581205B2 (ja) 2019-07-26 2020-07-13 半導体装置
JP2024190331A Active JP7741277B2 (ja) 2019-07-26 2024-10-30 半導体装置
JP2025146875A Pending JP2025183282A (ja) 2019-07-26 2025-09-04 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024190331A Active JP7741277B2 (ja) 2019-07-26 2024-10-30 半導体装置
JP2025146875A Pending JP2025183282A (ja) 2019-07-26 2025-09-04 半導体装置

Country Status (6)

Country Link
US (1) US12464777B2 (https=)
JP (3) JP7581205B2 (https=)
KR (1) KR20220039740A (https=)
CN (1) CN114144894A (https=)
TW (2) TWI856139B (https=)
WO (1) WO2021019334A1 (https=)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
JP7352058B2 (ja) * 2017-11-01 2023-09-28 セントラル硝子株式会社 炭化ケイ素単結晶の製造方法
WO2021053450A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置
CN116158204A (zh) 2020-08-27 2023-05-23 株式会社半导体能源研究所 半导体装置及其制造方法
JP7766037B2 (ja) 2020-09-22 2025-11-07 株式会社半導体エネルギー研究所 記憶装置
US12009432B2 (en) * 2021-03-05 2024-06-11 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US12376346B2 (en) * 2021-07-16 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating integrated circuit device with two gate structures
KR20240149947A (ko) * 2022-02-18 2024-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2026033392A1 (ja) * 2024-08-08 2026-02-12 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2026033398A1 (ja) * 2024-08-09 2026-02-12 株式会社半導体エネルギー研究所 トランジスタ

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Publication number Priority date Publication date Assignee Title
TWI518800B (zh) * 2008-08-08 2016-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
TWI514572B (zh) * 2011-06-10 2015-12-21 E Ink Holdings Inc 金屬氧化物半導體電晶體
US9343580B2 (en) 2011-12-05 2016-05-17 Sharp Kabushiki Kaisha Semiconductor device
US9431468B2 (en) * 2013-04-19 2016-08-30 Joled Inc. Thin-film semiconductor device, organic EL display device, and manufacturing methods thereof
WO2015097586A1 (en) * 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6402017B2 (ja) * 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102437450B1 (ko) * 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치를 포함하는 전자 기기
TWI663733B (zh) * 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
WO2016016761A1 (en) 2014-07-31 2016-02-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP6659255B2 (ja) 2014-09-02 2020-03-04 株式会社神戸製鋼所 薄膜トランジスタ
US9660100B2 (en) * 2015-02-06 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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WO2017006207A1 (en) * 2015-07-08 2017-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017072627A1 (ja) 2015-10-28 2017-05-04 株式会社半導体エネルギー研究所 半導体装置、モジュール、電子機器および半導体装置の作製方法
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
CN110402497B (zh) 2017-03-29 2024-08-06 株式会社半导体能源研究所 半导体装置、半导体装置的制造方法
JPWO2018224912A1 (ja) * 2017-06-08 2020-06-25 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11152513B2 (en) 2017-09-05 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2019087677A (ja) * 2017-11-08 2019-06-06 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7229669B2 (ja) * 2017-11-17 2023-02-28 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR102668377B1 (ko) 2017-12-08 2024-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US11205664B2 (en) 2017-12-27 2021-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US10978563B2 (en) 2018-12-21 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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