JPWO2021084369A5 - - Google Patents
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- Publication number
- JPWO2021084369A5 JPWO2021084369A5 JP2021553172A JP2021553172A JPWO2021084369A5 JP WO2021084369 A5 JPWO2021084369 A5 JP WO2021084369A5 JP 2021553172 A JP2021553172 A JP 2021553172A JP 2021553172 A JP2021553172 A JP 2021553172A JP WO2021084369 A5 JPWO2021084369 A5 JP WO2021084369A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- conductor
- contact
- semiconductor device
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 56
- 239000004020 conductor Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025013898A JP2025061974A (ja) | 2019-11-01 | 2025-01-30 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019200259 | 2019-11-01 | ||
| JP2019200259 | 2019-11-01 | ||
| JP2020068169 | 2020-04-06 | ||
| JP2020068169 | 2020-04-06 | ||
| PCT/IB2020/059796 WO2021084369A1 (ja) | 2019-11-01 | 2020-10-19 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025013898A Division JP2025061974A (ja) | 2019-11-01 | 2025-01-30 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021084369A1 JPWO2021084369A1 (https=) | 2021-05-06 |
| JPWO2021084369A5 true JPWO2021084369A5 (https=) | 2023-10-26 |
| JP7628956B2 JP7628956B2 (ja) | 2025-02-12 |
Family
ID=75715802
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021553172A Active JP7628956B2 (ja) | 2019-11-01 | 2020-10-19 | 半導体装置 |
| JP2025013898A Pending JP2025061974A (ja) | 2019-11-01 | 2025-01-30 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025013898A Pending JP2025061974A (ja) | 2019-11-01 | 2025-01-30 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12376373B2 (https=) |
| JP (2) | JP7628956B2 (https=) |
| KR (1) | KR20220092517A (https=) |
| CN (1) | CN114616681A (https=) |
| TW (1) | TWI878367B (https=) |
| WO (1) | WO2021084369A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7241068B2 (ja) * | 2018-05-02 | 2023-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7664171B2 (ja) | 2019-11-08 | 2025-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7710994B2 (ja) * | 2019-12-27 | 2025-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7629446B2 (ja) | 2020-03-31 | 2025-02-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5046529B2 (ja) * | 2005-02-25 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7566633B2 (en) | 2005-02-25 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5460108B2 (ja) * | 2008-04-18 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| TWI602303B (zh) | 2011-01-26 | 2017-10-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| CN103348464B (zh) | 2011-01-26 | 2016-01-13 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| WO2012102182A1 (en) | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20250154556A (ko) | 2012-07-20 | 2025-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치를 포함하는 전자 장치 |
| JP6219562B2 (ja) | 2012-10-30 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| US9397153B2 (en) | 2013-09-23 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20210039507A (ko) * | 2014-11-28 | 2021-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 모듈, 및 전자 기기 |
| KR20170096956A (ko) | 2016-02-17 | 2017-08-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기 |
| JP6968567B2 (ja) * | 2016-04-22 | 2021-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN109791950A (zh) * | 2016-10-21 | 2019-05-21 | 株式会社半导体能源研究所 | 半导体装置 |
| JP2019047101A (ja) * | 2017-09-05 | 2019-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11152513B2 (en) * | 2017-09-05 | 2021-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP7229669B2 (ja) * | 2017-11-17 | 2023-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| TWI852333B (zh) | 2017-12-07 | 2024-08-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
-
2020
- 2020-10-19 JP JP2021553172A patent/JP7628956B2/ja active Active
- 2020-10-19 KR KR1020227014917A patent/KR20220092517A/ko active Pending
- 2020-10-19 CN CN202080075473.1A patent/CN114616681A/zh active Pending
- 2020-10-19 US US17/771,565 patent/US12376373B2/en active Active
- 2020-10-19 WO PCT/IB2020/059796 patent/WO2021084369A1/ja not_active Ceased
- 2020-10-23 TW TW109136875A patent/TWI878367B/zh active
-
2025
- 2025-01-30 JP JP2025013898A patent/JP2025061974A/ja active Pending
- 2025-07-02 US US19/258,013 patent/US20250338606A1/en active Pending
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