JPWO2020136464A5 - - Google Patents
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- Publication number
- JPWO2020136464A5 JPWO2020136464A5 JP2020561966A JP2020561966A JPWO2020136464A5 JP WO2020136464 A5 JPWO2020136464 A5 JP WO2020136464A5 JP 2020561966 A JP2020561966 A JP 2020561966A JP 2020561966 A JP2020561966 A JP 2020561966A JP WO2020136464 A5 JPWO2020136464 A5 JP WO2020136464A5
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- oxide semiconductor
- conductor
- semiconductor
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024145948A JP7789867B2 (ja) | 2018-12-28 | 2024-08-27 | メモリデバイス |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018248460 | 2018-12-28 | ||
| PCT/IB2019/059811 WO2020136464A1 (ja) | 2018-12-28 | 2019-11-15 | メモリデバイス、当該メモリデバイスを有する半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024145948A Division JP7789867B2 (ja) | 2018-12-28 | 2024-08-27 | メモリデバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020136464A1 JPWO2020136464A1 (https=) | 2020-07-02 |
| JPWO2020136464A5 true JPWO2020136464A5 (https=) | 2022-10-14 |
Family
ID=71126903
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020561966A Withdrawn JPWO2020136464A1 (https=) | 2018-12-28 | 2019-11-15 | |
| JP2024145948A Active JP7789867B2 (ja) | 2018-12-28 | 2024-08-27 | メモリデバイス |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024145948A Active JP7789867B2 (ja) | 2018-12-28 | 2024-08-27 | メモリデバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12063770B2 (https=) |
| JP (2) | JPWO2020136464A1 (https=) |
| KR (1) | KR102923216B1 (https=) |
| TW (1) | TWI861028B (https=) |
| WO (1) | WO2020136464A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11271036B2 (en) * | 2020-06-24 | 2022-03-08 | Sandisk Technologies Llc | Memory device containing dual etch stop layers for selector elements and method of making the same |
| DE102021122723A1 (de) | 2020-09-03 | 2022-03-03 | Lg Display Co., Ltd. | Anzeigevorrichtung |
| US12113115B2 (en) | 2021-02-09 | 2024-10-08 | Taiwan Semiconductor Manufacturing Company Limited | Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same |
| US11984508B2 (en) * | 2021-02-24 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company Limited | Thin film transistor including a compositionally-modulated active region and methods for forming the same |
| JP2023136275A (ja) * | 2022-03-16 | 2023-09-29 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
| JP2023180895A (ja) | 2022-06-10 | 2023-12-21 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
| WO2025032474A1 (ja) * | 2023-08-10 | 2025-02-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140772A (ja) | 1997-07-22 | 1999-02-12 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US7898893B2 (en) * | 2007-09-12 | 2011-03-01 | Samsung Electronics Co., Ltd. | Multi-layered memory devices |
| US9691772B2 (en) | 2011-03-03 | 2017-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including memory cell which includes transistor and capacitor |
| JP6105266B2 (ja) | 2011-12-15 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| KR102207028B1 (ko) * | 2012-12-03 | 2021-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2017006207A1 (en) * | 2015-07-08 | 2017-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9773919B2 (en) * | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2017158465A1 (ja) * | 2016-03-18 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| WO2017187301A1 (en) * | 2016-04-28 | 2017-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| KR102330605B1 (ko) * | 2016-06-22 | 2021-11-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10615187B2 (en) * | 2016-07-27 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| US10504925B2 (en) * | 2016-08-08 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN109791950A (zh) * | 2016-10-21 | 2019-05-21 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2018167601A1 (ja) | 2017-03-13 | 2018-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| CN110402497B (zh) | 2017-03-29 | 2024-08-06 | 株式会社半导体能源研究所 | 半导体装置、半导体装置的制造方法 |
| JP2018206841A (ja) * | 2017-05-31 | 2018-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
-
2019
- 2019-11-15 WO PCT/IB2019/059811 patent/WO2020136464A1/ja not_active Ceased
- 2019-11-15 JP JP2020561966A patent/JPWO2020136464A1/ja not_active Withdrawn
- 2019-11-15 US US17/414,614 patent/US12063770B2/en active Active
- 2019-11-15 KR KR1020217020464A patent/KR102923216B1/ko active Active
- 2019-11-22 TW TW108142645A patent/TWI861028B/zh active
-
2024
- 2024-08-27 JP JP2024145948A patent/JP7789867B2/ja active Active
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