JPWO2021024071A5 - - Google Patents
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- Publication number
- JPWO2021024071A5 JPWO2021024071A5 JP2021538508A JP2021538508A JPWO2021024071A5 JP WO2021024071 A5 JPWO2021024071 A5 JP WO2021024071A5 JP 2021538508 A JP2021538508 A JP 2021538508A JP 2021538508 A JP2021538508 A JP 2021538508A JP WO2021024071 A5 JPWO2021024071 A5 JP WO2021024071A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- semiconductor
- conductor
- region
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 17
- 239000004065 semiconductor Substances 0.000 claims 17
- 239000004020 conductor Substances 0.000 claims 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025001916A JP7829073B2 (ja) | 2019-08-02 | 2025-01-06 | 記憶装置 |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019143203 | 2019-08-02 | ||
| JP2019143203 | 2019-08-02 | ||
| JP2019152617 | 2019-08-23 | ||
| JP2019152617 | 2019-08-23 | ||
| JP2019220338 | 2019-12-05 | ||
| JP2019220338 | 2019-12-05 | ||
| JP2019230220 | 2019-12-20 | ||
| JP2019230220 | 2019-12-20 | ||
| PCT/IB2020/056864 WO2021024071A1 (ja) | 2019-08-02 | 2020-07-22 | 記憶装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025001916A Division JP7829073B2 (ja) | 2019-08-02 | 2025-01-06 | 記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021024071A1 JPWO2021024071A1 (https=) | 2021-02-11 |
| JPWO2021024071A5 true JPWO2021024071A5 (https=) | 2023-07-13 |
| JP7617003B2 JP7617003B2 (ja) | 2025-01-17 |
Family
ID=74503333
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021538508A Active JP7617003B2 (ja) | 2019-08-02 | 2020-07-22 | 記憶装置 |
| JP2025001916A Active JP7829073B2 (ja) | 2019-08-02 | 2025-01-06 | 記憶装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025001916A Active JP7829073B2 (ja) | 2019-08-02 | 2025-01-06 | 記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US12347491B2 (https=) |
| JP (2) | JP7617003B2 (https=) |
| WO (1) | WO2021024071A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116368602A (zh) | 2020-10-02 | 2023-06-30 | 株式会社半导体能源研究所 | 半导体装置 |
| JP2022146030A (ja) * | 2021-03-22 | 2022-10-05 | キオクシア株式会社 | 半導体記憶装置及びその製造方法 |
| KR20240093546A (ko) | 2021-10-27 | 2024-06-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| JP2024001641A (ja) * | 2022-06-22 | 2024-01-10 | キオクシア株式会社 | 半導体装置及びその製造方法 |
| KR20240032551A (ko) * | 2022-09-02 | 2024-03-12 | 삼성전자주식회사 | 수직구조 트랜지스터 및 제조방법 |
| CN119947080B (zh) * | 2023-11-02 | 2026-04-03 | 北京超弦存储器研究院 | 一种半导体器件及其制造方法、电子设备 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6156620A (en) | 1998-07-22 | 2000-12-05 | Lsi Logic Corporation | Isolation trench in semiconductor substrate with nitrogen-containing barrier region, and process for forming same |
| US20090282763A1 (en) | 2008-05-19 | 2009-11-19 | Samuel Joseph Ferguson | Structural building component having a decorative overmolding, apparatus for fabricating such an article and its method of manufacture |
| KR101698193B1 (ko) | 2009-09-15 | 2017-01-19 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 그 제조 방법 |
| US8802493B2 (en) | 2011-09-13 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor device |
| US20160079265A1 (en) * | 2014-09-12 | 2016-03-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of manufacturing the same |
| JP6509514B2 (ja) * | 2014-09-17 | 2019-05-08 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| US9711522B2 (en) | 2014-10-03 | 2017-07-18 | Sandisk Technologies Llc | Memory hole structure in three dimensional memory |
| US9634097B2 (en) | 2014-11-25 | 2017-04-25 | Sandisk Technologies Llc | 3D NAND with oxide semiconductor channel |
| JP6343256B2 (ja) * | 2015-05-29 | 2018-06-13 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
| JP6400536B2 (ja) | 2015-08-04 | 2018-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
| US20170062456A1 (en) | 2015-08-31 | 2017-03-02 | Cypress Semiconductor Corporation | Vertical division of three-dimensional memory device |
| US10497712B2 (en) * | 2017-03-16 | 2019-12-03 | Toshiba Memory Corporation | Semiconductor memory |
| US10043808B1 (en) | 2017-03-16 | 2018-08-07 | Toshiba Memory Corporation | Semiconductor memory |
| US10312239B2 (en) | 2017-03-16 | 2019-06-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxie |
| US10553601B2 (en) * | 2017-03-16 | 2020-02-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxide |
| JP6956525B2 (ja) | 2017-06-08 | 2021-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、及び電子機器 |
| JP6693907B2 (ja) * | 2017-06-08 | 2020-05-13 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、及び電子機器 |
| US10593693B2 (en) | 2017-06-16 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP7195068B2 (ja) | 2017-06-26 | 2022-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| US10665604B2 (en) * | 2017-07-21 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
-
2020
- 2020-07-22 US US17/629,801 patent/US12347491B2/en active Active
- 2020-07-22 JP JP2021538508A patent/JP7617003B2/ja active Active
- 2020-07-22 WO PCT/IB2020/056864 patent/WO2021024071A1/ja not_active Ceased
-
2025
- 2025-01-06 JP JP2025001916A patent/JP7829073B2/ja active Active
- 2025-05-29 US US19/221,700 patent/US20250292834A1/en active Pending
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