JP2021019197A5 - - Google Patents
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- Publication number
- JP2021019197A5 JP2021019197A5 JP2020120378A JP2020120378A JP2021019197A5 JP 2021019197 A5 JP2021019197 A5 JP 2021019197A5 JP 2020120378 A JP2020120378 A JP 2020120378A JP 2020120378 A JP2020120378 A JP 2020120378A JP 2021019197 A5 JP2021019197 A5 JP 2021019197A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- layer
- insulating
- metal oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- 229910044991 metal oxide Inorganic materials 0.000 claims 16
- 150000004706 metal oxides Chemical class 0.000 claims 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 8
- 229910052733 gallium Inorganic materials 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 229910052760 oxygen Inorganic materials 0.000 claims 8
- 239000001301 oxygen Substances 0.000 claims 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 6
- 229910052738 indium Inorganic materials 0.000 claims 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 229910052725 zinc Inorganic materials 0.000 claims 6
- 239000011701 zinc Substances 0.000 claims 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052718 tin Inorganic materials 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024211161A JP7813338B2 (ja) | 2019-07-19 | 2024-12-04 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019133334 | 2019-07-19 | ||
| JP2019133334 | 2019-07-19 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024211161A Division JP7813338B2 (ja) | 2019-07-19 | 2024-12-04 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021019197A JP2021019197A (ja) | 2021-02-15 |
| JP2021019197A5 true JP2021019197A5 (https=) | 2023-07-14 |
| JP7599859B2 JP7599859B2 (ja) | 2024-12-16 |
Family
ID=74171497
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020120378A Active JP7599859B2 (ja) | 2019-07-19 | 2020-07-14 | 半導体装置 |
| JP2024211161A Active JP7813338B2 (ja) | 2019-07-19 | 2024-12-04 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024211161A Active JP7813338B2 (ja) | 2019-07-19 | 2024-12-04 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11211501B2 (https=) |
| JP (2) | JP7599859B2 (https=) |
| KR (1) | KR20210010333A (https=) |
| CN (1) | CN112242448A (https=) |
| TW (2) | TWI849170B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210010333A (ko) * | 2019-07-19 | 2021-01-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP7608159B2 (ja) * | 2020-12-29 | 2025-01-06 | 京セラ株式会社 | ３次元表示装置および画像表示システム |
| CN112713235A (zh) * | 2021-02-04 | 2021-04-27 | 曹建峰 | 一种基于金属基底的高温氮化铝压电传感器的制作方法 |
| JP2024011504A (ja) * | 2022-07-14 | 2024-01-25 | 株式会社ジャパンディスプレイ | 半導体装置 |
| TW202450128A (zh) * | 2023-01-13 | 2024-12-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP2024121394A (ja) * | 2023-02-27 | 2024-09-06 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP7724249B2 (ja) * | 2023-03-24 | 2025-08-15 | コネクテックジャパン株式会社 | インプリント用マスターモールドの作製方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102071545B1 (ko) | 2012-05-31 | 2020-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI644434B (zh) | 2013-04-29 | 2018-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9590109B2 (en) * | 2013-08-30 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6802656B2 (ja) | 2015-07-30 | 2020-12-16 | 株式会社半導体エネルギー研究所 | メモリセルの作製方法及び半導体装置の作製方法 |
| US9917207B2 (en) | 2015-12-25 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR20250044456A (ko) | 2016-01-29 | 2025-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 가지는 표시 장치 |
| DE112017000905T5 (de) | 2016-02-18 | 2018-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür, Anzeigevorrichtung und elektronisches Gerät |
| JP7126823B2 (ja) * | 2016-12-23 | 2022-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN106784014A (zh) * | 2016-12-23 | 2017-05-31 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示基板、显示装置 |
| JP6925819B2 (ja) * | 2017-02-17 | 2021-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2018190753A (ja) | 2017-04-28 | 2018-11-29 | 株式会社半導体エネルギー研究所 | 半導体装置、および表示装置 |
| WO2018211351A1 (en) * | 2017-05-19 | 2018-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and method for manufacturing semiconductor device |
| CN111033757B (zh) | 2017-09-01 | 2024-04-26 | 株式会社半导体能源研究所 | 半导体装置及显示装置 |
| CN111052396B (zh) * | 2017-09-01 | 2024-03-01 | 株式会社半导体能源研究所 | 半导体装置及显示装置 |
| JP2019103054A (ja) | 2017-12-06 | 2019-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置、メモリモジュール及び電子機器 |
| TWI794340B (zh) | 2017-12-07 | 2023-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
| US11482626B2 (en) * | 2018-03-29 | 2022-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| KR20210010333A (ko) * | 2019-07-19 | 2021-01-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
-
2020
- 2020-06-30 KR KR1020200080056A patent/KR20210010333A/ko not_active Ceased
- 2020-06-30 US US16/916,228 patent/US11211501B2/en not_active Expired - Fee Related
- 2020-07-03 TW TW109122513A patent/TWI849170B/zh active
- 2020-07-03 TW TW113122003A patent/TWI891405B/zh active
- 2020-07-14 JP JP2020120378A patent/JP7599859B2/ja active Active
- 2020-07-17 CN CN202010692943.0A patent/CN112242448A/zh active Pending
-
2021
- 2021-11-29 US US17/536,526 patent/US11799034B2/en active Active
-
2023
- 2023-09-13 US US18/367,700 patent/US12457773B2/en active Active
-
2024
- 2024-12-04 JP JP2024211161A patent/JP7813338B2/ja active Active
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