JPWO2020178654A5 - - Google Patents
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- JPWO2020178654A5 JPWO2020178654A5 JP2021503229A JP2021503229A JPWO2020178654A5 JP WO2020178654 A5 JPWO2020178654 A5 JP WO2020178654A5 JP 2021503229 A JP2021503229 A JP 2021503229A JP 2021503229 A JP2021503229 A JP 2021503229A JP WO2020178654 A5 JPWO2020178654 A5 JP WO2020178654A5
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- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- semiconductor
- semiconductor device
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024202097A JP7820482B2 (ja) | 2019-03-01 | 2024-11-20 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019037916 | 2019-03-01 | ||
| JP2019037916 | 2019-03-01 | ||
| JP2019081285 | 2019-04-22 | ||
| JP2019081285 | 2019-04-22 | ||
| PCT/IB2020/051350 WO2020178654A1 (ja) | 2019-03-01 | 2020-02-19 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024202097A Division JP7820482B2 (ja) | 2019-03-01 | 2024-11-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020178654A1 JPWO2020178654A1 (https=) | 2020-09-10 |
| JPWO2020178654A5 true JPWO2020178654A5 (https=) | 2023-02-27 |
| JP7592579B2 JP7592579B2 (ja) | 2024-12-02 |
Family
ID=72338582
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021503229A Active JP7592579B2 (ja) | 2019-03-01 | 2020-02-19 | 半導体装置 |
| JP2024202097A Active JP7820482B2 (ja) | 2019-03-01 | 2024-11-20 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024202097A Active JP7820482B2 (ja) | 2019-03-01 | 2024-11-20 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12166134B2 (https=) |
| JP (2) | JP7592579B2 (https=) |
| KR (1) | KR20210134695A (https=) |
| CN (1) | CN113519065A (https=) |
| WO (1) | WO2020178654A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116240630A (zh) * | 2018-08-01 | 2023-06-09 | 出光兴产株式会社 | 晶体化合物、氧化物烧结体、溅射靶、晶质及无定形氧化物薄膜、薄膜晶体管及电子设备 |
| US12166134B2 (en) * | 2019-03-01 | 2024-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2023184236A1 (zh) * | 2022-03-30 | 2023-10-05 | 京东方科技集团股份有限公司 | 金属氧化物薄膜晶体管、阵列基板及显示装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI654764B (zh) * | 2010-11-11 | 2019-03-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置及其製造方法 |
| KR101981808B1 (ko) * | 2010-12-28 | 2019-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| WO2012090973A1 (en) * | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2012209543A (ja) * | 2011-03-11 | 2012-10-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR102071545B1 (ko) | 2012-05-31 | 2020-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN111524967B (zh) | 2014-02-21 | 2024-07-12 | 株式会社半导体能源研究所 | 半导体膜、晶体管、半导体装置、显示装置以及电子设备 |
| JP6559444B2 (ja) * | 2014-03-14 | 2019-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2017037564A1 (en) * | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, transistor, and semiconductor device |
| US10388738B2 (en) * | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
| KR102492209B1 (ko) * | 2016-05-19 | 2023-01-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 산화물 반도체 및 트랜지스터 |
| US10043659B2 (en) | 2016-05-20 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or display device including the same |
| JP2017222563A (ja) * | 2016-06-10 | 2017-12-21 | 株式会社半導体エネルギー研究所 | 金属酸化物 |
| KR102384624B1 (ko) | 2016-10-21 | 2022-04-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10692452B2 (en) | 2017-01-16 | 2020-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US12166134B2 (en) * | 2019-03-01 | 2024-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2020
- 2020-02-19 US US17/433,458 patent/US12166134B2/en active Active
- 2020-02-19 KR KR1020217031010A patent/KR20210134695A/ko active Pending
- 2020-02-19 WO PCT/IB2020/051350 patent/WO2020178654A1/ja not_active Ceased
- 2020-02-19 JP JP2021503229A patent/JP7592579B2/ja active Active
- 2020-02-19 CN CN202080018241.2A patent/CN113519065A/zh active Pending
-
2024
- 2024-11-20 JP JP2024202097A patent/JP7820482B2/ja active Active
- 2024-12-06 US US18/972,210 patent/US20250107153A1/en active Pending
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