JPWO2020178654A5 - - Google Patents

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Publication number
JPWO2020178654A5
JPWO2020178654A5 JP2021503229A JP2021503229A JPWO2020178654A5 JP WO2020178654 A5 JPWO2020178654 A5 JP WO2020178654A5 JP 2021503229 A JP2021503229 A JP 2021503229A JP 2021503229 A JP2021503229 A JP 2021503229A JP WO2020178654 A5 JPWO2020178654 A5 JP WO2020178654A5
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JP
Japan
Prior art keywords
insulating layer
layer
semiconductor
semiconductor device
coordinates
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JP2021503229A
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English (en)
Japanese (ja)
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JP7592579B2 (ja
JPWO2020178654A1 (https=
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Priority claimed from PCT/IB2020/051350 external-priority patent/WO2020178654A1/ja
Publication of JPWO2020178654A1 publication Critical patent/JPWO2020178654A1/ja
Publication of JPWO2020178654A5 publication Critical patent/JPWO2020178654A5/ja
Priority to JP2024202097A priority Critical patent/JP7820482B2/ja
Application granted granted Critical
Publication of JP7592579B2 publication Critical patent/JP7592579B2/ja
Active legal-status Critical Current
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JP2021503229A 2019-03-01 2020-02-19 半導体装置 Active JP7592579B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024202097A JP7820482B2 (ja) 2019-03-01 2024-11-20 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019037916 2019-03-01
JP2019037916 2019-03-01
JP2019081285 2019-04-22
JP2019081285 2019-04-22
PCT/IB2020/051350 WO2020178654A1 (ja) 2019-03-01 2020-02-19 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024202097A Division JP7820482B2 (ja) 2019-03-01 2024-11-20 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020178654A1 JPWO2020178654A1 (https=) 2020-09-10
JPWO2020178654A5 true JPWO2020178654A5 (https=) 2023-02-27
JP7592579B2 JP7592579B2 (ja) 2024-12-02

Family

ID=72338582

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021503229A Active JP7592579B2 (ja) 2019-03-01 2020-02-19 半導体装置
JP2024202097A Active JP7820482B2 (ja) 2019-03-01 2024-11-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024202097A Active JP7820482B2 (ja) 2019-03-01 2024-11-20 半導体装置

Country Status (5)

Country Link
US (2) US12166134B2 (https=)
JP (2) JP7592579B2 (https=)
KR (1) KR20210134695A (https=)
CN (1) CN113519065A (https=)
WO (1) WO2020178654A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777078B (zh) * 2018-08-01 2022-09-11 日本商出光興產股份有限公司 結晶構造化合物、氧化物燒結體、濺鍍靶材、結晶質氧化物薄膜、非晶質氧化物薄膜、薄膜電晶體、及電子機器
CN113519065A (zh) * 2019-03-01 2021-10-19 株式会社半导体能源研究所 半导体装置
CN117157768A (zh) * 2022-03-30 2023-12-01 京东方科技集团股份有限公司 金属氧化物薄膜晶体管、阵列基板及显示装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI593115B (zh) * 2010-11-11 2017-07-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012090974A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8883556B2 (en) * 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012209543A (ja) * 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
TWI702187B (zh) 2014-02-21 2020-08-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
US10361290B2 (en) * 2014-03-14 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
WO2017037564A1 (en) * 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, transistor, and semiconductor device
US10388738B2 (en) * 2016-04-01 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and method for manufacturing the same
WO2017199130A1 (en) * 2016-05-19 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and transistor
US10043659B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
JP2017222563A (ja) * 2016-06-10 2017-12-21 株式会社半導体エネルギー研究所 金属酸化物
CN109791950A (zh) 2016-10-21 2019-05-21 株式会社半导体能源研究所 半导体装置
US10692452B2 (en) 2017-01-16 2020-06-23 Semiconductor Energy Laboratory Co., Ltd. Display device
CN113519065A (zh) * 2019-03-01 2021-10-19 株式会社半导体能源研究所 半导体装置

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