JPWO2020178651A5 - - Google Patents

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Publication number
JPWO2020178651A5
JPWO2020178651A5 JP2021503228A JP2021503228A JPWO2020178651A5 JP WO2020178651 A5 JPWO2020178651 A5 JP WO2020178651A5 JP 2021503228 A JP2021503228 A JP 2021503228A JP 2021503228 A JP2021503228 A JP 2021503228A JP WO2020178651 A5 JPWO2020178651 A5 JP WO2020178651A5
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JP
Japan
Prior art keywords
conductive
conductive film
layer
metal oxide
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021503228A
Other languages
English (en)
Japanese (ja)
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JP7515453B2 (ja
JPWO2020178651A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2020/051294 external-priority patent/WO2020178651A1/ja
Publication of JPWO2020178651A1 publication Critical patent/JPWO2020178651A1/ja
Publication of JPWO2020178651A5 publication Critical patent/JPWO2020178651A5/ja
Priority to JP2024106783A priority Critical patent/JP7794897B2/ja
Application granted granted Critical
Publication of JP7515453B2 publication Critical patent/JP7515453B2/ja
Priority to JP2025265450A priority patent/JP2026048898A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021503228A 2019-03-01 2020-02-17 半導体装置 Active JP7515453B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024106783A JP7794897B2 (ja) 2019-03-01 2024-07-02 半導体装置
JP2025265450A JP2026048898A (ja) 2019-03-01 2025-12-18 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019037921 2019-03-01
JP2019037921 2019-03-01
PCT/IB2020/051294 WO2020178651A1 (ja) 2019-03-01 2020-02-17 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024106783A Division JP7794897B2 (ja) 2019-03-01 2024-07-02 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020178651A1 JPWO2020178651A1 (https=) 2020-09-10
JPWO2020178651A5 true JPWO2020178651A5 (https=) 2023-02-27
JP7515453B2 JP7515453B2 (ja) 2024-07-12

Family

ID=72338412

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021503228A Active JP7515453B2 (ja) 2019-03-01 2020-02-17 半導体装置
JP2024106783A Active JP7794897B2 (ja) 2019-03-01 2024-07-02 半導体装置
JP2025265450A Pending JP2026048898A (ja) 2019-03-01 2025-12-18 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024106783A Active JP7794897B2 (ja) 2019-03-01 2024-07-02 半導体装置
JP2025265450A Pending JP2026048898A (ja) 2019-03-01 2025-12-18 半導体装置

Country Status (5)

Country Link
US (2) US12136674B2 (https=)
JP (3) JP7515453B2 (https=)
KR (1) KR20210129114A (https=)
CN (1) CN113508468A (https=)
WO (1) WO2020178651A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116240630A (zh) * 2018-08-01 2023-06-09 出光兴产株式会社 晶体化合物、氧化物烧结体、溅射靶、晶质及无定形氧化物薄膜、薄膜晶体管及电子设备
KR102940621B1 (ko) * 2021-11-02 2026-03-17 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치
TWI870090B (zh) * 2023-11-08 2025-01-11 友達光電股份有限公司 顯示裝置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100295042A1 (en) * 2008-01-23 2010-11-25 Idemitsu Kosan Co., Ltd. Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device
CN106200185A (zh) * 2009-10-16 2016-12-07 株式会社半导体能源研究所 显示设备
KR102071545B1 (ko) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN111524967B (zh) 2014-02-21 2024-07-12 株式会社半导体能源研究所 半导体膜、晶体管、半导体装置、显示装置以及电子设备
US10043913B2 (en) * 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
JP6647841B2 (ja) * 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 酸化物の作製方法
TWI686874B (zh) * 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
KR20170101233A (ko) * 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃의 제작 방법
US9917209B2 (en) * 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
US10553690B2 (en) * 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10685614B2 (en) * 2016-03-17 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
US10043659B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
US10692452B2 (en) 2017-01-16 2020-06-23 Semiconductor Energy Laboratory Co., Ltd. Display device

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