KR20210129114A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20210129114A
KR20210129114A KR1020217029419A KR20217029419A KR20210129114A KR 20210129114 A KR20210129114 A KR 20210129114A KR 1020217029419 A KR1020217029419 A KR 1020217029419A KR 20217029419 A KR20217029419 A KR 20217029419A KR 20210129114 A KR20210129114 A KR 20210129114A
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KR
South Korea
Prior art keywords
layer
insulating layer
conductive
conductive layer
transistor
Prior art date
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Pending
Application number
KR1020217029419A
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English (en)
Korean (ko)
Inventor
순페이 야마자키
토시미츠 오보나이
준이치 코에즈카
켄이치 오카자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20210129114A publication Critical patent/KR20210129114A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/7869—
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H01L27/1225—
    • H01L29/24—
    • H01L29/45—
    • H01L29/4908—
    • H01L29/513—
    • H01L29/78696—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020217029419A 2019-03-01 2020-02-17 반도체 장치 Pending KR20210129114A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019037921 2019-03-01
JPJP-P-2019-037921 2019-03-01
PCT/IB2020/051294 WO2020178651A1 (ja) 2019-03-01 2020-02-17 半導体装置

Publications (1)

Publication Number Publication Date
KR20210129114A true KR20210129114A (ko) 2021-10-27

Family

ID=72338412

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217029419A Pending KR20210129114A (ko) 2019-03-01 2020-02-17 반도체 장치

Country Status (5)

Country Link
US (2) US12136674B2 (https=)
JP (3) JP7515453B2 (https=)
KR (1) KR20210129114A (https=)
CN (1) CN113508468A (https=)
WO (1) WO2020178651A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116072735A (zh) * 2021-11-02 2023-05-05 乐金显示有限公司 薄膜晶体管以及包括薄膜晶体管的显示装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777078B (zh) * 2018-08-01 2022-09-11 日本商出光興產股份有限公司 結晶構造化合物、氧化物燒結體、濺鍍靶材、結晶質氧化物薄膜、非晶質氧化物薄膜、薄膜電晶體、及電子機器
WO2023028839A1 (zh) * 2021-08-31 2023-03-09 京东方科技集团股份有限公司 显示基板和显示面板
TWI870090B (zh) * 2023-11-08 2025-01-11 友達光電股份有限公司 顯示裝置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014007399A (ja) 2012-05-31 2014-01-16 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (12)

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WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
KR101988819B1 (ko) * 2009-10-16 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 이를 구비한 전자 장치
TWI702187B (zh) 2014-02-21 2020-08-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
US10043913B2 (en) * 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
JP6647841B2 (ja) * 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 酸化物の作製方法
TWI686874B (zh) * 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
KR20170101233A (ko) * 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃의 제작 방법
US9917209B2 (en) * 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
US10553690B2 (en) * 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10685614B2 (en) * 2016-03-17 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
US10043659B2 (en) * 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
US10692452B2 (en) 2017-01-16 2020-06-23 Semiconductor Energy Laboratory Co., Ltd. Display device

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2014007399A (ja) 2012-05-31 2014-01-16 Semiconductor Energy Lab Co Ltd 半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M. Nakamura, N. Kimizuka, and T. Mohri, "The Phase Relations in the In2O3-Ga2ZnO4-ZnO System at 1350℃", J. Solid State Chem., 1991, Vol.93, p.298-315
N. Kimizuka, M. Isobe, and M. Nakamura, "Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m(m=3,4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m(m=7,8,9, and 16) in the In2O3-ZnGa2O4-ZnO System", J. Solid State Chem., 1995, Vol.116, p.170-178

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116072735A (zh) * 2021-11-02 2023-05-05 乐金显示有限公司 薄膜晶体管以及包括薄膜晶体管的显示装置

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Publication number Publication date
JP7515453B2 (ja) 2024-07-12
US20220140144A1 (en) 2022-05-05
US20250169113A1 (en) 2025-05-22
JP2026048898A (ja) 2026-03-17
CN113508468A (zh) 2021-10-15
JPWO2020178651A1 (https=) 2020-09-10
US12136674B2 (en) 2024-11-05
WO2020178651A1 (ja) 2020-09-10
JP7794897B2 (ja) 2026-01-06
JP2024150479A (ja) 2024-10-23

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