JPWO2020136464A1 - - Google Patents
Info
- Publication number
- JPWO2020136464A1 JPWO2020136464A1 JP2020561966A JP2020561966A JPWO2020136464A1 JP WO2020136464 A1 JPWO2020136464 A1 JP WO2020136464A1 JP 2020561966 A JP2020561966 A JP 2020561966A JP 2020561966 A JP2020561966 A JP 2020561966A JP WO2020136464 A1 JPWO2020136464 A1 JP WO2020136464A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024145948A JP7789867B2 (ja) | 2018-12-28 | 2024-08-27 | メモリデバイス |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018248460 | 2018-12-28 | ||
| PCT/IB2019/059811 WO2020136464A1 (ja) | 2018-12-28 | 2019-11-15 | メモリデバイス、当該メモリデバイスを有する半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024145948A Division JP7789867B2 (ja) | 2018-12-28 | 2024-08-27 | メモリデバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020136464A1 true JPWO2020136464A1 (https=) | 2020-07-02 |
| JPWO2020136464A5 JPWO2020136464A5 (https=) | 2022-10-14 |
Family
ID=71126903
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020561966A Withdrawn JPWO2020136464A1 (https=) | 2018-12-28 | 2019-11-15 | |
| JP2024145948A Active JP7789867B2 (ja) | 2018-12-28 | 2024-08-27 | メモリデバイス |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024145948A Active JP7789867B2 (ja) | 2018-12-28 | 2024-08-27 | メモリデバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12063770B2 (https=) |
| JP (2) | JPWO2020136464A1 (https=) |
| KR (1) | KR102923216B1 (https=) |
| TW (1) | TWI861028B (https=) |
| WO (1) | WO2020136464A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11271036B2 (en) * | 2020-06-24 | 2022-03-08 | Sandisk Technologies Llc | Memory device containing dual etch stop layers for selector elements and method of making the same |
| DE102021122723A1 (de) | 2020-09-03 | 2022-03-03 | Lg Display Co., Ltd. | Anzeigevorrichtung |
| US12113115B2 (en) | 2021-02-09 | 2024-10-08 | Taiwan Semiconductor Manufacturing Company Limited | Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same |
| US11984508B2 (en) * | 2021-02-24 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company Limited | Thin film transistor including a compositionally-modulated active region and methods for forming the same |
| JP2023136275A (ja) * | 2022-03-16 | 2023-09-29 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
| JP2023180895A (ja) | 2022-06-10 | 2023-12-21 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
| WO2025032474A1 (ja) * | 2023-08-10 | 2025-02-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016131253A (ja) * | 2011-03-03 | 2016-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017158465A1 (ja) * | 2016-03-18 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| WO2018167601A1 (ja) * | 2017-03-13 | 2018-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| WO2018178793A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140772A (ja) | 1997-07-22 | 1999-02-12 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US7898893B2 (en) * | 2007-09-12 | 2011-03-01 | Samsung Electronics Co., Ltd. | Multi-layered memory devices |
| JP6105266B2 (ja) | 2011-12-15 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| KR102207028B1 (ko) * | 2012-12-03 | 2021-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2017006207A1 (en) * | 2015-07-08 | 2017-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9773919B2 (en) * | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2017187301A1 (en) * | 2016-04-28 | 2017-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| KR102330605B1 (ko) * | 2016-06-22 | 2021-11-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10615187B2 (en) * | 2016-07-27 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| US10504925B2 (en) * | 2016-08-08 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN109791950A (zh) * | 2016-10-21 | 2019-05-21 | 株式会社半导体能源研究所 | 半导体装置 |
| JP2018206841A (ja) * | 2017-05-31 | 2018-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
-
2019
- 2019-11-15 WO PCT/IB2019/059811 patent/WO2020136464A1/ja not_active Ceased
- 2019-11-15 JP JP2020561966A patent/JPWO2020136464A1/ja not_active Withdrawn
- 2019-11-15 US US17/414,614 patent/US12063770B2/en active Active
- 2019-11-15 KR KR1020217020464A patent/KR102923216B1/ko active Active
- 2019-11-22 TW TW108142645A patent/TWI861028B/zh active
-
2024
- 2024-08-27 JP JP2024145948A patent/JP7789867B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016131253A (ja) * | 2011-03-03 | 2016-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017158465A1 (ja) * | 2016-03-18 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| WO2018167601A1 (ja) * | 2017-03-13 | 2018-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| WO2018178793A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7789867B2 (ja) | 2025-12-22 |
| JP2024164220A (ja) | 2024-11-26 |
| KR20210108967A (ko) | 2021-09-03 |
| US12063770B2 (en) | 2024-08-13 |
| WO2020136464A1 (ja) | 2020-07-02 |
| TWI861028B (zh) | 2024-11-11 |
| US20220139917A1 (en) | 2022-05-05 |
| TW202027232A (zh) | 2020-07-16 |
| KR102923216B1 (ko) | 2026-02-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
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| A80 | Written request to apply exceptions to lack of novelty of invention |
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| A80 | Written request to apply exceptions to lack of novelty of invention |
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