KR102923216B1 - 메모리 디바이스, 상기 메모리 디바이스를 갖는 반도체 장치 - Google Patents

메모리 디바이스, 상기 메모리 디바이스를 갖는 반도체 장치

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Publication number
KR102923216B1
KR102923216B1 KR1020217020464A KR20217020464A KR102923216B1 KR 102923216 B1 KR102923216 B1 KR 102923216B1 KR 1020217020464 A KR1020217020464 A KR 1020217020464A KR 20217020464 A KR20217020464 A KR 20217020464A KR 102923216 B1 KR102923216 B1 KR 102923216B1
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South Korea
Prior art keywords
insulator
oxide
conductor
insulating layer
layer
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KR1020217020464A
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English (en)
Korean (ko)
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KR20210108967A (ko
Inventor
슌페이 야마자키
šœ페이 야마자키
기요시 가토
타츠야 오누키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020217020464A 2018-12-28 2019-11-15 메모리 디바이스, 상기 메모리 디바이스를 갖는 반도체 장치 Active KR102923216B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018248460 2018-12-28
JPJP-P-2018-248460 2018-12-28
PCT/IB2019/059811 WO2020136464A1 (ja) 2018-12-28 2019-11-15 メモリデバイス、当該メモリデバイスを有する半導体装置

Publications (2)

Publication Number Publication Date
KR20210108967A KR20210108967A (ko) 2021-09-03
KR102923216B1 true KR102923216B1 (ko) 2026-02-04

Family

ID=71126903

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217020464A Active KR102923216B1 (ko) 2018-12-28 2019-11-15 메모리 디바이스, 상기 메모리 디바이스를 갖는 반도체 장치

Country Status (5)

Country Link
US (1) US12063770B2 (https=)
JP (2) JPWO2020136464A1 (https=)
KR (1) KR102923216B1 (https=)
TW (1) TWI861028B (https=)
WO (1) WO2020136464A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11271036B2 (en) * 2020-06-24 2022-03-08 Sandisk Technologies Llc Memory device containing dual etch stop layers for selector elements and method of making the same
DE102021122723A1 (de) 2020-09-03 2022-03-03 Lg Display Co., Ltd. Anzeigevorrichtung
US12113115B2 (en) 2021-02-09 2024-10-08 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same
US11984508B2 (en) * 2021-02-24 2024-05-14 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-modulated active region and methods for forming the same
JP2023136275A (ja) * 2022-03-16 2023-09-29 キオクシア株式会社 半導体装置及び半導体記憶装置
JP2023180895A (ja) 2022-06-10 2023-12-21 キオクシア株式会社 半導体装置及び半導体記憶装置
WO2025032474A1 (ja) * 2023-08-10 2025-02-13 株式会社半導体エネルギー研究所 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009071313A (ja) * 2007-09-12 2009-04-02 Samsung Electronics Co Ltd 積層メモリ装置
WO2017158465A1 (ja) * 2016-03-18 2017-09-21 株式会社半導体エネルギー研究所 記憶装置

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Publication number Priority date Publication date Assignee Title
JPH1140772A (ja) 1997-07-22 1999-02-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
KR102207028B1 (ko) * 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2017006207A1 (en) * 2015-07-08 2017-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9773919B2 (en) * 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017187301A1 (en) * 2016-04-28 2017-11-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
KR102330605B1 (ko) * 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10615187B2 (en) * 2016-07-27 2020-04-07 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
US10504925B2 (en) * 2016-08-08 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN109791950A (zh) * 2016-10-21 2019-05-21 株式会社半导体能源研究所 半导体装置
WO2018167601A1 (ja) 2017-03-13 2018-09-20 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN110402497B (zh) 2017-03-29 2024-08-06 株式会社半导体能源研究所 半导体装置、半导体装置的制造方法
JP2018206841A (ja) * 2017-05-31 2018-12-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009071313A (ja) * 2007-09-12 2009-04-02 Samsung Electronics Co Ltd 積層メモリ装置
WO2017158465A1 (ja) * 2016-03-18 2017-09-21 株式会社半導体エネルギー研究所 記憶装置

Also Published As

Publication number Publication date
JP7789867B2 (ja) 2025-12-22
JP2024164220A (ja) 2024-11-26
KR20210108967A (ko) 2021-09-03
US12063770B2 (en) 2024-08-13
WO2020136464A1 (ja) 2020-07-02
TWI861028B (zh) 2024-11-11
US20220139917A1 (en) 2022-05-05
TW202027232A (zh) 2020-07-16
JPWO2020136464A1 (https=) 2020-07-02

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