JPWO2020021383A5 - - Google Patents

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Publication number
JPWO2020021383A5
JPWO2020021383A5 JP2020531830A JP2020531830A JPWO2020021383A5 JP WO2020021383 A5 JPWO2020021383 A5 JP WO2020021383A5 JP 2020531830 A JP2020531830 A JP 2020531830A JP 2020531830 A JP2020531830 A JP 2020531830A JP WO2020021383 A5 JPWO2020021383 A5 JP WO2020021383A5
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JP
Japan
Prior art keywords
oxide
insulator
conductor
overlaps
region
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Granted
Application number
JP2020531830A
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English (en)
Japanese (ja)
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JPWO2020021383A1 (ja
JP7268027B2 (ja
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Priority claimed from PCT/IB2019/056049 external-priority patent/WO2020021383A1/ja
Publication of JPWO2020021383A1 publication Critical patent/JPWO2020021383A1/ja
Publication of JPWO2020021383A5 publication Critical patent/JPWO2020021383A5/ja
Priority to JP2023069136A priority Critical patent/JP7420999B2/ja
Application granted granted Critical
Publication of JP7268027B2 publication Critical patent/JP7268027B2/ja
Active legal-status Critical Current
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JP2020531830A 2018-07-27 2019-07-16 半導体装置 Active JP7268027B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023069136A JP7420999B2 (ja) 2018-07-27 2023-04-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018141425 2018-07-27
JP2018141425 2018-07-27
PCT/IB2019/056049 WO2020021383A1 (ja) 2018-07-27 2019-07-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023069136A Division JP7420999B2 (ja) 2018-07-27 2023-04-20 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020021383A1 JPWO2020021383A1 (ja) 2021-08-12
JPWO2020021383A5 true JPWO2020021383A5 (https=) 2022-07-21
JP7268027B2 JP7268027B2 (ja) 2023-05-02

Family

ID=69182220

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020531830A Active JP7268027B2 (ja) 2018-07-27 2019-07-16 半導体装置
JP2023069136A Active JP7420999B2 (ja) 2018-07-27 2023-04-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023069136A Active JP7420999B2 (ja) 2018-07-27 2023-04-20 半導体装置

Country Status (4)

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US (2) US11804551B2 (https=)
JP (2) JP7268027B2 (https=)
TW (1) TWI856966B (https=)
WO (1) WO2020021383A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11594624B2 (en) * 2018-12-13 2023-02-28 Intel Corporation Transistor structures formed with 2DEG at complex oxide interfaces
US12113115B2 (en) * 2021-02-09 2024-10-08 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same
US12426277B2 (en) 2021-07-23 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded double side heating phase change random access memory (PCRAM) device and method of making same
US12278142B2 (en) 2022-05-11 2025-04-15 Nanya Technology Corporation Method for manfacturing semiconductor device for reducing partcle-induced defects
TWI826174B (zh) * 2022-05-11 2023-12-11 南亞科技股份有限公司 半導體元件的製備方法
US12211739B2 (en) 2022-05-11 2025-01-28 Nanya Technology Corporation Method for manufacturing semiconductor device comprising contact void surrounding bit line

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN108305895B (zh) 2012-08-10 2021-08-03 株式会社半导体能源研究所 半导体装置及其制造方法
JP2015149414A (ja) * 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
SG11201606536XA (en) 2014-03-18 2016-09-29 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
WO2016016761A1 (en) 2014-07-31 2016-02-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
KR102788207B1 (ko) * 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10164120B2 (en) 2015-05-28 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2016203354A1 (en) 2015-06-19 2016-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
WO2017072627A1 (ja) * 2015-10-28 2017-05-04 株式会社半導体エネルギー研究所 半導体装置、モジュール、電子機器および半導体装置の作製方法
JP6887243B2 (ja) * 2015-12-11 2021-06-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器及び半導ウエハ
KR20170096956A (ko) 2016-02-17 2017-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기
WO2018051208A1 (en) 2016-09-14 2018-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2018073995A (ja) 2016-10-28 2018-05-10 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11088286B2 (en) 2017-09-15 2021-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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