JPWO2019234547A5 - - Google Patents

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Publication number
JPWO2019234547A5
JPWO2019234547A5 JP2020523839A JP2020523839A JPWO2019234547A5 JP WO2019234547 A5 JPWO2019234547 A5 JP WO2019234547A5 JP 2020523839 A JP2020523839 A JP 2020523839A JP 2020523839 A JP2020523839 A JP 2020523839A JP WO2019234547 A5 JPWO2019234547 A5 JP WO2019234547A5
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JP
Japan
Prior art keywords
insulator
region
conductor
oxide
semiconductor device
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JP2020523839A
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English (en)
Japanese (ja)
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JPWO2019234547A1 (ja
JP7161529B2 (ja
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Priority claimed from PCT/IB2019/054361 external-priority patent/WO2019234547A1/ja
Publication of JPWO2019234547A1 publication Critical patent/JPWO2019234547A1/ja
Publication of JPWO2019234547A5 publication Critical patent/JPWO2019234547A5/ja
Priority to JP2022165216A priority Critical patent/JP7371201B2/ja
Application granted granted Critical
Publication of JP7161529B2 publication Critical patent/JP7161529B2/ja
Active legal-status Critical Current
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JP2020523839A 2018-06-08 2019-05-27 半導体装置 Active JP7161529B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022165216A JP7371201B2 (ja) 2018-06-08 2022-10-14 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018110077 2018-06-08
JP2018110077 2018-06-08
PCT/IB2019/054361 WO2019234547A1 (ja) 2018-06-08 2019-05-27 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022165216A Division JP7371201B2 (ja) 2018-06-08 2022-10-14 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2019234547A1 JPWO2019234547A1 (ja) 2021-06-24
JPWO2019234547A5 true JPWO2019234547A5 (https=) 2022-04-08
JP7161529B2 JP7161529B2 (ja) 2022-10-26

Family

ID=68770161

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020523839A Active JP7161529B2 (ja) 2018-06-08 2019-05-27 半導体装置
JP2022165216A Active JP7371201B2 (ja) 2018-06-08 2022-10-14 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022165216A Active JP7371201B2 (ja) 2018-06-08 2022-10-14 半導体装置

Country Status (3)

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US (3) US11495691B2 (https=)
JP (2) JP7161529B2 (https=)
WO (1) WO2019234547A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11916121B2 (en) 2020-06-29 2024-02-27 Taiwan Semiconductor Manufacturing Company Limited Tri-gate orthogonal channel transistor and methods of forming the same
WO2025186691A1 (ja) * 2024-03-08 2025-09-12 株式会社半導体エネルギー研究所 半導体装置
WO2025224597A1 (ja) * 2024-04-26 2025-10-30 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070090456A1 (en) 2005-08-29 2007-04-26 Jin-Yuan Lee Soi device and method for fabricating the same
US7999335B2 (en) 2007-12-05 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Micromachine and method for manufacturing the same
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR101957972B1 (ko) 2012-06-05 2019-07-04 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR102244460B1 (ko) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2015188062A (ja) * 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443872B2 (en) * 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016128859A1 (en) 2015-02-11 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI695513B (zh) * 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
CN104810375B (zh) 2015-04-28 2018-09-04 合肥鑫晟光电科技有限公司 一种阵列基板及其制作方法和一种显示装置
WO2016203341A1 (ja) * 2015-06-18 2016-12-22 株式会社半導体エネルギー研究所 半導体装置
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
JP2017112374A (ja) 2015-12-16 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器
JPWO2019048987A1 (ja) 2017-09-06 2020-10-15 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2019197946A1 (ja) 2018-04-12 2019-10-17 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

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