JP7161529B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7161529B2
JP7161529B2 JP2020523839A JP2020523839A JP7161529B2 JP 7161529 B2 JP7161529 B2 JP 7161529B2 JP 2020523839 A JP2020523839 A JP 2020523839A JP 2020523839 A JP2020523839 A JP 2020523839A JP 7161529 B2 JP7161529 B2 JP 7161529B2
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insulator
oxide
conductor
transistor
region
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Japanese (ja)
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JPWO2019234547A1 (ja
JPWO2019234547A5 (https=
Inventor
敏彦 竹内
直人 山出
豊 岡崎
祐朗 手塚
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2022165216A priority Critical patent/JP7371201B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP2020523839A 2018-06-08 2019-05-27 半導体装置 Active JP7161529B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022165216A JP7371201B2 (ja) 2018-06-08 2022-10-14 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018110077 2018-06-08
JP2018110077 2018-06-08
PCT/IB2019/054361 WO2019234547A1 (ja) 2018-06-08 2019-05-27 半導体装置

Related Child Applications (1)

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JPWO2019234547A1 JPWO2019234547A1 (ja) 2021-06-24
JPWO2019234547A5 JPWO2019234547A5 (https=) 2022-04-08
JP7161529B2 true JP7161529B2 (ja) 2022-10-26

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JP2022165216A Active JP7371201B2 (ja) 2018-06-08 2022-10-14 半導体装置

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JP (2) JP7161529B2 (https=)
WO (1) WO2019234547A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11916121B2 (en) 2020-06-29 2024-02-27 Taiwan Semiconductor Manufacturing Company Limited Tri-gate orthogonal channel transistor and methods of forming the same
WO2025186691A1 (ja) * 2024-03-08 2025-09-12 株式会社半導体エネルギー研究所 半導体装置
WO2025224597A1 (ja) * 2024-04-26 2025-10-30 株式会社半導体エネルギー研究所 半導体装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080915A (ja) 2011-09-22 2013-05-02 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013102149A (ja) 2011-10-13 2013-05-23 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2015181162A (ja) 2014-03-06 2015-10-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2015188070A (ja) 2014-03-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP2016149552A (ja) 2015-02-11 2016-08-18 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US20160322388A1 (en) 2015-04-28 2016-11-03 Boe Technology Group Co., Ltd. Array substrate, its manufacturing method and display device
WO2016203341A1 (ja) 2015-06-18 2016-12-22 株式会社半導体エネルギー研究所 半導体装置
JP2017112374A (ja) 2015-12-16 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器

Family Cites Families (13)

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US20070090456A1 (en) 2005-08-29 2007-04-26 Jin-Yuan Lee Soi device and method for fabricating the same
US7999335B2 (en) 2007-12-05 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Micromachine and method for manufacturing the same
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR101957972B1 (ko) 2012-06-05 2019-07-04 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR102244460B1 (ko) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2015188062A (ja) * 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
TWI695513B (zh) * 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
JPWO2019048987A1 (ja) 2017-09-06 2020-10-15 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2019197946A1 (ja) 2018-04-12 2019-10-17 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080915A (ja) 2011-09-22 2013-05-02 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013102149A (ja) 2011-10-13 2013-05-23 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2015181162A (ja) 2014-03-06 2015-10-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2015188070A (ja) 2014-03-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP2016149552A (ja) 2015-02-11 2016-08-18 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US20160322388A1 (en) 2015-04-28 2016-11-03 Boe Technology Group Co., Ltd. Array substrate, its manufacturing method and display device
WO2016203341A1 (ja) 2015-06-18 2016-12-22 株式会社半導体エネルギー研究所 半導体装置
JP2017112374A (ja) 2015-12-16 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器

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Publication number Publication date
JPWO2019234547A1 (ja) 2021-06-24
US20210210640A1 (en) 2021-07-08
US11495691B2 (en) 2022-11-08
WO2019234547A1 (ja) 2019-12-12
JP7371201B2 (ja) 2023-10-30
US11967649B2 (en) 2024-04-23
JP2022183244A (ja) 2022-12-08
US20240304728A1 (en) 2024-09-12
US20220416089A1 (en) 2022-12-29
US12453134B2 (en) 2025-10-21

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