JPWO2021019334A1 - - Google Patents
Info
- Publication number
- JPWO2021019334A1 JPWO2021019334A1 JP2021536436A JP2021536436A JPWO2021019334A1 JP WO2021019334 A1 JPWO2021019334 A1 JP WO2021019334A1 JP 2021536436 A JP2021536436 A JP 2021536436A JP 2021536436 A JP2021536436 A JP 2021536436A JP WO2021019334 A1 JPWO2021019334 A1 JP WO2021019334A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
- H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
Landscapes
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024190331A JP7741277B2 (ja) | 2019-07-26 | 2024-10-30 | 半導体装置 |
| JP2025146875A JP2025183282A (ja) | 2019-07-26 | 2025-09-04 | 半導体装置 |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019138038 | 2019-07-26 | ||
| JP2019138038 | 2019-07-26 | ||
| JP2019141556 | 2019-07-31 | ||
| JP2019141556 | 2019-07-31 | ||
| JP2019170999 | 2019-09-20 | ||
| JP2019170999 | 2019-09-20 | ||
| JP2020081763 | 2020-05-07 | ||
| JP2020081763 | 2020-05-07 | ||
| PCT/IB2020/056540 WO2021019334A1 (ja) | 2019-07-26 | 2020-07-13 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024190331A Division JP7741277B2 (ja) | 2019-07-26 | 2024-10-30 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021019334A1 true JPWO2021019334A1 (https=) | 2021-02-04 |
| JPWO2021019334A5 JPWO2021019334A5 (https=) | 2023-07-24 |
| JP7581205B2 JP7581205B2 (ja) | 2024-11-12 |
Family
ID=74230166
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021536436A Active JP7581205B2 (ja) | 2019-07-26 | 2020-07-13 | 半導体装置 |
| JP2024190331A Active JP7741277B2 (ja) | 2019-07-26 | 2024-10-30 | 半導体装置 |
| JP2025146875A Pending JP2025183282A (ja) | 2019-07-26 | 2025-09-04 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024190331A Active JP7741277B2 (ja) | 2019-07-26 | 2024-10-30 | 半導体装置 |
| JP2025146875A Pending JP2025183282A (ja) | 2019-07-26 | 2025-09-04 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12464777B2 (https=) |
| JP (3) | JP7581205B2 (https=) |
| KR (1) | KR20220039740A (https=) |
| CN (1) | CN114144894A (https=) |
| TW (2) | TWI856139B (https=) |
| WO (1) | WO2021019334A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7352058B2 (ja) * | 2017-11-01 | 2023-09-28 | セントラル硝子株式会社 | 炭化ケイ素単結晶の製造方法 |
| WO2021053450A1 (ja) | 2019-09-20 | 2021-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN116158204A (zh) | 2020-08-27 | 2023-05-23 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| JP7766037B2 (ja) | 2020-09-22 | 2025-11-07 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| US12009432B2 (en) * | 2021-03-05 | 2024-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| US12376346B2 (en) * | 2021-07-16 | 2025-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating integrated circuit device with two gate structures |
| KR20240149947A (ko) * | 2022-02-18 | 2024-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2026033392A1 (ja) * | 2024-08-08 | 2026-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| WO2026033398A1 (ja) * | 2024-08-09 | 2026-02-12 | 株式会社半導体エネルギー研究所 | トランジスタ |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014171056A1 (ja) * | 2013-04-19 | 2014-10-23 | パナソニック株式会社 | 薄膜半導体装置、有機ｅｌ表示装置、及びそれらの製造方法 |
| WO2016189425A1 (ja) * | 2015-05-28 | 2016-12-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2018178793A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| JP2019087677A (ja) * | 2017-11-08 | 2019-06-06 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP2019096856A (ja) * | 2017-11-17 | 2019-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI518800B (zh) * | 2008-08-08 | 2016-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| TWI514572B (zh) * | 2011-06-10 | 2015-12-21 | E Ink Holdings Inc | 金屬氧化物半導體電晶體 |
| US9343580B2 (en) | 2011-12-05 | 2016-05-17 | Sharp Kabushiki Kaisha | Semiconductor device |
| WO2015097586A1 (en) * | 2013-12-25 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6402017B2 (ja) * | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102437450B1 (ko) * | 2014-06-13 | 2022-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치를 포함하는 전자 기기 |
| TWI663733B (zh) * | 2014-06-18 | 2019-06-21 | 日商半導體能源研究所股份有限公司 | 電晶體及半導體裝置 |
| WO2016016761A1 (en) | 2014-07-31 | 2016-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP6659255B2 (ja) | 2014-09-02 | 2020-03-04 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
| US9660100B2 (en) * | 2015-02-06 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2017006207A1 (en) * | 2015-07-08 | 2017-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2017072627A1 (ja) | 2015-10-28 | 2017-05-04 | 株式会社半導体エネルギー研究所 | 半導体装置、モジュール、電子機器および半導体装置の作製方法 |
| SG10201701689UA (en) | 2016-03-18 | 2017-10-30 | Semiconductor Energy Lab | Semiconductor device, semiconductor wafer, and electronic device |
| JPWO2018224912A1 (ja) * | 2017-06-08 | 2020-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11152513B2 (en) | 2017-09-05 | 2021-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR102668377B1 (ko) | 2017-12-08 | 2024-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US11205664B2 (en) | 2017-12-27 | 2021-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US10978563B2 (en) | 2018-12-21 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
-
2020
- 2020-07-13 US US17/628,296 patent/US12464777B2/en active Active
- 2020-07-13 WO PCT/IB2020/056540 patent/WO2021019334A1/ja not_active Ceased
- 2020-07-13 KR KR1020227004632A patent/KR20220039740A/ko not_active Ceased
- 2020-07-13 JP JP2021536436A patent/JP7581205B2/ja active Active
- 2020-07-13 CN CN202080052839.3A patent/CN114144894A/zh active Pending
- 2020-07-14 TW TW109123731A patent/TWI856139B/zh active
- 2020-07-14 TW TW113133063A patent/TW202514978A/zh unknown
-
2024
- 2024-10-30 JP JP2024190331A patent/JP7741277B2/ja active Active
-
2025
- 2025-09-04 JP JP2025146875A patent/JP2025183282A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014171056A1 (ja) * | 2013-04-19 | 2014-10-23 | パナソニック株式会社 | 薄膜半導体装置、有機ｅｌ表示装置、及びそれらの製造方法 |
| WO2016189425A1 (ja) * | 2015-05-28 | 2016-12-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2018178793A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| JP2019087677A (ja) * | 2017-11-08 | 2019-06-06 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP2019096856A (ja) * | 2017-11-17 | 2019-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025016621A (ja) | 2025-02-04 |
| JP2025183282A (ja) | 2025-12-16 |
| WO2021019334A1 (ja) | 2021-02-04 |
| US20220271168A1 (en) | 2022-08-25 |
| TW202514978A (zh) | 2025-04-01 |
| KR20220039740A (ko) | 2022-03-29 |
| JP7741277B2 (ja) | 2025-09-17 |
| TW202105660A (zh) | 2021-02-01 |
| US12464777B2 (en) | 2025-11-04 |
| CN114144894A (zh) | 2022-03-04 |
| JP7581205B2 (ja) | 2024-11-12 |
| TWI856139B (zh) | 2024-09-21 |
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