JP7581205B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7581205B2
JP7581205B2 JP2021536436A JP2021536436A JP7581205B2 JP 7581205 B2 JP7581205 B2 JP 7581205B2 JP 2021536436 A JP2021536436 A JP 2021536436A JP 2021536436 A JP2021536436 A JP 2021536436A JP 7581205 B2 JP7581205 B2 JP 7581205B2
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Prior art keywords
insulator
oxide
conductor
oxygen
transistor
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Japanese (ja)
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JPWO2021019334A5 (https=
JPWO2021019334A1 (https=
Inventor
舜平 山崎
慎也 笹川
涼太 方堂
貴史 廣瀬
良寛 小松
克明 栃林
健太郎 菅谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2021019334A1 publication Critical patent/JPWO2021019334A1/ja
Publication of JPWO2021019334A5 publication Critical patent/JPWO2021019334A5/ja
Priority to JP2024190331A priority Critical patent/JP7741277B2/ja
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Publication of JP7581205B2 publication Critical patent/JP7581205B2/ja
Priority to JP2025146875A priority patent/JP2025183282A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021536436A 2019-07-26 2020-07-13 半導体装置 Active JP7581205B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024190331A JP7741277B2 (ja) 2019-07-26 2024-10-30 半導体装置
JP2025146875A JP2025183282A (ja) 2019-07-26 2025-09-04 半導体装置

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2019138038 2019-07-26
JP2019138038 2019-07-26
JP2019141556 2019-07-31
JP2019141556 2019-07-31
JP2019170999 2019-09-20
JP2019170999 2019-09-20
JP2020081763 2020-05-07
JP2020081763 2020-05-07
PCT/IB2020/056540 WO2021019334A1 (ja) 2019-07-26 2020-07-13 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024190331A Division JP7741277B2 (ja) 2019-07-26 2024-10-30 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021019334A1 JPWO2021019334A1 (https=) 2021-02-04
JPWO2021019334A5 JPWO2021019334A5 (https=) 2023-07-24
JP7581205B2 true JP7581205B2 (ja) 2024-11-12

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JP2021536436A Active JP7581205B2 (ja) 2019-07-26 2020-07-13 半導体装置
JP2024190331A Active JP7741277B2 (ja) 2019-07-26 2024-10-30 半導体装置
JP2025146875A Pending JP2025183282A (ja) 2019-07-26 2025-09-04 半導体装置

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JP2024190331A Active JP7741277B2 (ja) 2019-07-26 2024-10-30 半導体装置
JP2025146875A Pending JP2025183282A (ja) 2019-07-26 2025-09-04 半導体装置

Country Status (6)

Country Link
US (1) US12464777B2 (https=)
JP (3) JP7581205B2 (https=)
KR (1) KR20220039740A (https=)
CN (1) CN114144894A (https=)
TW (2) TWI856139B (https=)
WO (1) WO2021019334A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7352058B2 (ja) * 2017-11-01 2023-09-28 セントラル硝子株式会社 炭化ケイ素単結晶の製造方法
WO2021053450A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置
CN116158204A (zh) 2020-08-27 2023-05-23 株式会社半导体能源研究所 半导体装置及其制造方法
JP7766037B2 (ja) 2020-09-22 2025-11-07 株式会社半導体エネルギー研究所 記憶装置
US12009432B2 (en) * 2021-03-05 2024-06-11 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
US12376346B2 (en) * 2021-07-16 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating integrated circuit device with two gate structures
KR20240149947A (ko) * 2022-02-18 2024-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2026033392A1 (ja) * 2024-08-08 2026-02-12 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2026033398A1 (ja) * 2024-08-09 2026-02-12 株式会社半導体エネルギー研究所 トランジスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014171056A1 (ja) 2013-04-19 2014-10-23 パナソニック株式会社 薄膜半導体装置、有機ｅｌ表示装置、及びそれらの製造方法
WO2016189425A1 (ja) 2015-05-28 2016-12-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2018178793A1 (ja) 2017-03-29 2018-10-04 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法

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TWI518800B (zh) * 2008-08-08 2016-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
TWI514572B (zh) * 2011-06-10 2015-12-21 E Ink Holdings Inc 金屬氧化物半導體電晶體
US9343580B2 (en) 2011-12-05 2016-05-17 Sharp Kabushiki Kaisha Semiconductor device
WO2015097586A1 (en) * 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6402017B2 (ja) * 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102437450B1 (ko) * 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치를 포함하는 전자 기기
TWI663733B (zh) * 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
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JP7229669B2 (ja) * 2017-11-17 2023-02-28 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR102668377B1 (ko) 2017-12-08 2024-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
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Publication number Priority date Publication date Assignee Title
WO2014171056A1 (ja) 2013-04-19 2014-10-23 パナソニック株式会社 薄膜半導体装置、有機ｅｌ表示装置、及びそれらの製造方法
WO2016189425A1 (ja) 2015-05-28 2016-12-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2018178793A1 (ja) 2017-03-29 2018-10-04 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法

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Publication number Publication date
JP2025016621A (ja) 2025-02-04
JP2025183282A (ja) 2025-12-16
WO2021019334A1 (ja) 2021-02-04
US20220271168A1 (en) 2022-08-25
TW202514978A (zh) 2025-04-01
KR20220039740A (ko) 2022-03-29
JP7741277B2 (ja) 2025-09-17
TW202105660A (zh) 2021-02-01
US12464777B2 (en) 2025-11-04
JPWO2021019334A1 (https=) 2021-02-04
CN114144894A (zh) 2022-03-04
TWI856139B (zh) 2024-09-21

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