JPWO2020188392A5 - - Google Patents

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Publication number
JPWO2020188392A5
JPWO2020188392A5 JP2021506779A JP2021506779A JPWO2020188392A5 JP WO2020188392 A5 JPWO2020188392 A5 JP WO2020188392A5 JP 2021506779 A JP2021506779 A JP 2021506779A JP 2021506779 A JP2021506779 A JP 2021506779A JP WO2020188392 A5 JPWO2020188392 A5 JP WO2020188392A5
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JP
Japan
Prior art keywords
insulator
conductor
oxide semiconductor
oxide
contact
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JP2021506779A
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English (en)
Japanese (ja)
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JP7472100B2 (ja
JPWO2020188392A1 (https=
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Priority claimed from PCT/IB2020/051933 external-priority patent/WO2020188392A1/ja
Publication of JPWO2020188392A1 publication Critical patent/JPWO2020188392A1/ja
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Priority to JP2024063342A priority Critical patent/JP2024102079A/ja
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JP2021506779A 2019-03-15 2020-03-06 半導体装置 Active JP7472100B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024063342A JP2024102079A (ja) 2019-03-15 2024-04-10 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019048542 2019-03-15
JP2019048542 2019-03-15
PCT/IB2020/051933 WO2020188392A1 (ja) 2019-03-15 2020-03-06 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024063342A Division JP2024102079A (ja) 2019-03-15 2024-04-10 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020188392A1 JPWO2020188392A1 (https=) 2020-09-24
JPWO2020188392A5 true JPWO2020188392A5 (https=) 2023-02-08
JP7472100B2 JP7472100B2 (ja) 2024-04-22

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ID=72520549

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JP2021506779A Active JP7472100B2 (ja) 2019-03-15 2020-03-06 半導体装置
JP2024063342A Withdrawn JP2024102079A (ja) 2019-03-15 2024-04-10 半導体装置

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JP2024063342A Withdrawn JP2024102079A (ja) 2019-03-15 2024-04-10 半導体装置

Country Status (3)

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US (1) US12396214B2 (https=)
JP (2) JP7472100B2 (https=)
WO (1) WO2020188392A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102881599B1 (ko) * 2020-08-07 2025-11-07 삼성디스플레이 주식회사 표시 패널, 이를 포함하는 표시 장치, 및 표시 패널의 제조 방법
CN114539654B (zh) * 2022-02-11 2023-08-08 重庆大学 一种利用高压模块自带电场来提高器件封装导热的塑封材料改性方法
US20240395934A1 (en) * 2023-05-24 2024-11-28 The Boeing Company Semiconductor devices for use in high-pressure environments

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Publication number Priority date Publication date Assignee Title
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
KR102072244B1 (ko) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TW202535182A (zh) * 2013-05-16 2025-09-01 日商半導體能源研究所股份有限公司 半導體裝置
US20150008428A1 (en) * 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN113793872A (zh) * 2014-12-10 2021-12-14 株式会社半导体能源研究所 半导体装置及其制造方法
US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN104779299A (zh) * 2015-04-16 2015-07-15 京东方科技集团股份有限公司 金属氧化物薄膜晶体管及制备方法、显示基板和显示装置
US10340390B2 (en) * 2015-06-08 2019-07-02 Sharp Kabushiki Kaisha Semiconductor device and method for producing the same
US9917209B2 (en) 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
US20170062192A1 (en) * 2015-08-28 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Film forming apparatus
JP6845692B2 (ja) * 2016-01-15 2021-03-24 株式会社半導体エネルギー研究所 半導体装置
US10700212B2 (en) * 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
KR102210992B1 (ko) * 2016-03-18 2021-02-02 가부시키가이샤 리코 전계 효과형 트랜지스터, 표시 소자, 화상 표시 장치, 및 시스템
US10032918B2 (en) * 2016-04-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20180134919A (ko) * 2016-04-22 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI737665B (zh) * 2016-07-01 2021-09-01 日商半導體能源硏究所股份有限公司 半導體裝置以及半導體裝置的製造方法
US10223194B2 (en) * 2016-11-04 2019-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage device, semiconductor device, electronic device, and server system
US10692994B2 (en) 2016-12-23 2020-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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US12237389B2 (en) * 2018-11-02 2025-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12218246B2 (en) * 2018-12-28 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2020229914A1 (ja) * 2019-05-10 2020-11-19 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

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