JPWO2019180539A5 - - Google Patents
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- Publication number
- JPWO2019180539A5 JPWO2019180539A5 JP2020508096A JP2020508096A JPWO2019180539A5 JP WO2019180539 A5 JPWO2019180539 A5 JP WO2019180539A5 JP 2020508096 A JP2020508096 A JP 2020508096A JP 2020508096 A JP2020508096 A JP 2020508096A JP WO2019180539 A5 JPWO2019180539 A5 JP WO2019180539A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- region
- semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims 2
- 238000004458 analytical method Methods 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023204004A JP2024037777A (ja) | 2018-03-23 | 2023-12-01 | 半導体装置の作製方法 |
| JP2025115924A JP2025137572A (ja) | 2018-03-23 | 2025-07-09 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018056918 | 2018-03-23 | ||
| JP2018056918 | 2018-03-23 | ||
| PCT/IB2019/051968 WO2019180539A1 (ja) | 2018-03-23 | 2019-03-12 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023204004A Division JP2024037777A (ja) | 2018-03-23 | 2023-12-01 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2019180539A1 JPWO2019180539A1 (ja) | 2021-04-01 |
| JPWO2019180539A5 true JPWO2019180539A5 (https=) | 2022-03-16 |
| JP7397789B2 JP7397789B2 (ja) | 2023-12-13 |
Family
ID=67986839
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020508096A Active JP7397789B2 (ja) | 2018-03-23 | 2019-03-12 | 半導体装置の作製方法 |
| JP2023204004A Withdrawn JP2024037777A (ja) | 2018-03-23 | 2023-12-01 | 半導体装置の作製方法 |
| JP2025115924A Pending JP2025137572A (ja) | 2018-03-23 | 2025-07-09 | 半導体装置の作製方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023204004A Withdrawn JP2024037777A (ja) | 2018-03-23 | 2023-12-01 | 半導体装置の作製方法 |
| JP2025115924A Pending JP2025137572A (ja) | 2018-03-23 | 2025-07-09 | 半導体装置の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11430897B2 (https=) |
| JP (3) | JP7397789B2 (https=) |
| KR (2) | KR102797576B1 (https=) |
| CN (2) | CN118507531A (https=) |
| WO (1) | WO2019180539A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102797576B1 (ko) | 2018-03-23 | 2025-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN116157858A (zh) * | 2020-08-05 | 2023-05-23 | 贝尔-赫拉恒温控制有限公司 | 用于显示信息的设备，特别是用于车辆的设备 |
| EP4160697B1 (en) * | 2020-12-01 | 2026-04-22 | BOE Technology Group Co., Ltd. | Oxide thin film transistor and preparation method therefor, and display device |
| JP7589050B2 (ja) * | 2021-01-15 | 2024-11-25 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| JP2024039361A (ja) * | 2022-09-09 | 2024-03-22 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2024051551A (ja) * | 2022-09-30 | 2024-04-11 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2024053987A (ja) * | 2022-10-04 | 2024-04-16 | 株式会社ジャパンディスプレイ | 半導体装置及びその製造方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2819694B2 (ja) * | 1989-11-17 | 1998-10-30 | 富士ゼロックス株式会社 | Ｍｏｓ型半導体装置の製造方法 |
| JP2903134B2 (ja) * | 1990-11-10 | 1999-06-07 | 株式会社 半導体エネルギー研究所 | 半導体装置 |
| US5672907A (en) | 1995-03-22 | 1997-09-30 | Nippon Steel Corporation | Semiconductor device having character in BPSG film |
| JPH08321502A (ja) * | 1995-03-22 | 1996-12-03 | Nippon Steel Corp | 半導体装置 |
| JP4599603B2 (ja) * | 2003-02-12 | 2010-12-15 | シャープ株式会社 | トランジスタの製造方法 |
| JP2005093626A (ja) * | 2003-09-17 | 2005-04-07 | Sharp Corp | 半導体装置および半導体装置の製造方法 |
| JP2005321670A (ja) * | 2004-05-11 | 2005-11-17 | Sony Corp | 薄膜半導体装置、液晶表示装置及び画像プロジェクタ装置 |
| JP2008270637A (ja) * | 2007-04-24 | 2008-11-06 | Sharp Corp | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
| KR101836532B1 (ko) | 2009-09-04 | 2018-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102089200B1 (ko) * | 2009-11-28 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| JP5577124B2 (ja) * | 2010-03-18 | 2014-08-20 | 株式会社ジャパンディスプレイ | 有機半導体装置及びその製造方法 |
| JP5708910B2 (ja) | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| JP2012033778A (ja) * | 2010-07-30 | 2012-02-16 | Dainippon Printing Co Ltd | 薄膜トランジスタとその製造方法、薄膜トランジスタアレイとその製造方法、及び、ディスプレイ装置 |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| TWI644434B (zh) | 2013-04-29 | 2018-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP6345023B2 (ja) | 2013-08-07 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US9318618B2 (en) | 2013-12-27 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN112038410A (zh) | 2014-07-15 | 2020-12-04 | 株式会社半导体能源研究所 | 半导体装置及其制造方法以及包括半导体装置的显示装置 |
| KR20180010205A (ko) | 2015-05-22 | 2018-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
| WO2017064590A1 (en) | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2017115222A1 (en) | 2015-12-29 | 2017-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide film and semiconductor device |
| KR102797576B1 (ko) * | 2018-03-23 | 2025-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
-
2019
- 2019-03-12 KR KR1020207029740A patent/KR102797576B1/ko active Active
- 2019-03-12 US US16/976,232 patent/US11430897B2/en active Active
- 2019-03-12 CN CN202410718963.9A patent/CN118507531A/zh active Pending
- 2019-03-12 WO PCT/IB2019/051968 patent/WO2019180539A1/ja not_active Ceased
- 2019-03-12 CN CN201980019782.4A patent/CN111868899B/zh active Active
- 2019-03-12 JP JP2020508096A patent/JP7397789B2/ja active Active
- 2019-03-12 KR KR1020257011940A patent/KR20250057083A/ko active Pending
-
2022
- 2022-07-21 US US17/869,960 patent/US11935963B2/en active Active
-
2023
- 2023-12-01 JP JP2023204004A patent/JP2024037777A/ja not_active Withdrawn
-
2024
- 2024-03-08 US US18/599,592 patent/US12363955B2/en active Active
-
2025
- 2025-07-09 JP JP2025115924A patent/JP2025137572A/ja active Pending
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