JP7397789B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP7397789B2
JP7397789B2 JP2020508096A JP2020508096A JP7397789B2 JP 7397789 B2 JP7397789 B2 JP 7397789B2 JP 2020508096 A JP2020508096 A JP 2020508096A JP 2020508096 A JP2020508096 A JP 2020508096A JP 7397789 B2 JP7397789 B2 JP 7397789B2
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insulating layer
layer
film
region
transistor
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JPWO2019180539A5 (https=
JPWO2019180539A1 (ja
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純一 肥塚
安孝 中澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
JP2020508096A 2018-03-23 2019-03-12 半導体装置の作製方法 Active JP7397789B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023204004A JP2024037777A (ja) 2018-03-23 2023-12-01 半導体装置の作製方法
JP2025115924A JP2025137572A (ja) 2018-03-23 2025-07-09 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018056918 2018-03-23
JP2018056918 2018-03-23
PCT/IB2019/051968 WO2019180539A1 (ja) 2018-03-23 2019-03-12 半導体装置

Related Child Applications (1)

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JP2023204004A Division JP2024037777A (ja) 2018-03-23 2023-12-01 半導体装置の作製方法

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JPWO2019180539A1 JPWO2019180539A1 (ja) 2021-04-01
JPWO2019180539A5 JPWO2019180539A5 (https=) 2022-03-16
JP7397789B2 true JP7397789B2 (ja) 2023-12-13

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JP2023204004A Withdrawn JP2024037777A (ja) 2018-03-23 2023-12-01 半導体装置の作製方法
JP2025115924A Pending JP2025137572A (ja) 2018-03-23 2025-07-09 半導体装置の作製方法

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JP2025115924A Pending JP2025137572A (ja) 2018-03-23 2025-07-09 半導体装置の作製方法

Country Status (5)

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US (3) US11430897B2 (https=)
JP (3) JP7397789B2 (https=)
KR (2) KR102797576B1 (https=)
CN (2) CN118507531A (https=)
WO (1) WO2019180539A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102797576B1 (ko) 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN116157858A (zh) * 2020-08-05 2023-05-23 贝尔-赫拉恒温控制有限公司 用于显示信息的设备，特别是用于车辆的设备
EP4160697B1 (en) * 2020-12-01 2026-04-22 BOE Technology Group Co., Ltd. Oxide thin film transistor and preparation method therefor, and display device
JP7589050B2 (ja) * 2021-01-15 2024-11-25 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP2024039361A (ja) * 2022-09-09 2024-03-22 株式会社ジャパンディスプレイ 半導体装置
JP2024051551A (ja) * 2022-09-30 2024-04-11 株式会社ジャパンディスプレイ 半導体装置
JP2024053987A (ja) * 2022-10-04 2024-04-16 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

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JP2004247414A (ja) 2003-02-12 2004-09-02 Sharp Corp トランジスタおよびその製造方法、並びに該トランジスタを用いた液晶表示装置
JP2008270637A (ja) 2007-04-24 2008-11-06 Sharp Corp 薄膜トランジスタの製造方法及び薄膜トランジスタ
JP2011077515A (ja) 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2011198579A (ja) 2010-03-18 2011-10-06 Toshiba Mobile Display Co Ltd 有機半導体装置及びその製造方法
JP2015144266A (ja) 2013-12-27 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
JP2018006728A (ja) 2015-12-29 2018-01-11 株式会社半導体エネルギー研究所 金属酸化物膜、および半導体装置

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US5672907A (en) 1995-03-22 1997-09-30 Nippon Steel Corporation Semiconductor device having character in BPSG film
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247414A (ja) 2003-02-12 2004-09-02 Sharp Corp トランジスタおよびその製造方法、並びに該トランジスタを用いた液晶表示装置
JP2008270637A (ja) 2007-04-24 2008-11-06 Sharp Corp 薄膜トランジスタの製造方法及び薄膜トランジスタ
JP2011077515A (ja) 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2011198579A (ja) 2010-03-18 2011-10-06 Toshiba Mobile Display Co Ltd 有機半導体装置及びその製造方法
JP2015144266A (ja) 2013-12-27 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
JP2018006728A (ja) 2015-12-29 2018-01-11 株式会社半導体エネルギー研究所 金属酸化物膜、および半導体装置

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Publication number Publication date
US20250081534A1 (en) 2025-03-06
US12363955B2 (en) 2025-07-15
KR102797576B1 (ko) 2025-04-22
US11935963B2 (en) 2024-03-19
CN111868899B (zh) 2024-07-12
WO2019180539A1 (ja) 2019-09-26
JPWO2019180539A1 (ja) 2021-04-01
JP2025137572A (ja) 2025-09-19
CN111868899A (zh) 2020-10-30
US20220367723A1 (en) 2022-11-17
CN118507531A (zh) 2024-08-16
KR20200134262A (ko) 2020-12-01
US11430897B2 (en) 2022-08-30
JP2024037777A (ja) 2024-03-19
US20200411694A1 (en) 2020-12-31
KR20250057083A (ko) 2025-04-28

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