KR102797576B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102797576B1
KR102797576B1 KR1020207029740A KR20207029740A KR102797576B1 KR 102797576 B1 KR102797576 B1 KR 102797576B1 KR 1020207029740 A KR1020207029740 A KR 1020207029740A KR 20207029740 A KR20207029740 A KR 20207029740A KR 102797576 B1 KR102797576 B1 KR 102797576B1
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layer
insulating layer
region
addition
film
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KR20200134262A (ko
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준이치 고에즈카
야수타카 나카자와
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
KR1020207029740A 2018-03-23 2019-03-12 반도체 장치 Active KR102797576B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257011940A KR20250057083A (ko) 2018-03-23 2019-03-12 반도체 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018056918 2018-03-23
JPJP-P-2018-056918 2018-03-23
PCT/IB2019/051968 WO2019180539A1 (ja) 2018-03-23 2019-03-12 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257011940A Division KR20250057083A (ko) 2018-03-23 2019-03-12 반도체 장치

Publications (2)

Publication Number Publication Date
KR20200134262A KR20200134262A (ko) 2020-12-01
KR102797576B1 true KR102797576B1 (ko) 2025-04-22

Family

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Family Applications (2)

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KR1020207029740A Active KR102797576B1 (ko) 2018-03-23 2019-03-12 반도체 장치
KR1020257011940A Pending KR20250057083A (ko) 2018-03-23 2019-03-12 반도체 장치

Family Applications After (1)

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Country Status (5)

Country Link
US (3) US11430897B2 (https=)
JP (3) JP7397789B2 (https=)
KR (2) KR102797576B1 (https=)
CN (2) CN118507531A (https=)
WO (1) WO2019180539A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102797576B1 (ko) 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN116157858A (zh) * 2020-08-05 2023-05-23 贝尔-赫拉恒温控制有限公司 用于显示信息的设备，特别是用于车辆的设备
EP4160697B1 (en) * 2020-12-01 2026-04-22 BOE Technology Group Co., Ltd. Oxide thin film transistor and preparation method therefor, and display device
JP7589050B2 (ja) * 2021-01-15 2024-11-25 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP2024039361A (ja) * 2022-09-09 2024-03-22 株式会社ジャパンディスプレイ 半導体装置
JP2024051551A (ja) * 2022-09-30 2024-04-11 株式会社ジャパンディスプレイ 半導体装置
JP2024053987A (ja) * 2022-10-04 2024-04-16 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Citations (5)

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JP2004247414A (ja) 2003-02-12 2004-09-02 Sharp Corp トランジスタおよびその製造方法、並びに該トランジスタを用いた液晶表示装置
JP2008270637A (ja) * 2007-04-24 2008-11-06 Sharp Corp 薄膜トランジスタの製造方法及び薄膜トランジスタ
JP2011077515A (ja) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2015144266A (ja) * 2013-12-27 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
JP2018006728A (ja) * 2015-12-29 2018-01-11 株式会社半導体エネルギー研究所 金属酸化物膜、および半導体装置

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JP2903134B2 (ja) * 1990-11-10 1999-06-07 株式会社 半導体エネルギー研究所 半導体装置
US5672907A (en) 1995-03-22 1997-09-30 Nippon Steel Corporation Semiconductor device having character in BPSG film
JPH08321502A (ja) * 1995-03-22 1996-12-03 Nippon Steel Corp 半導体装置
JP2005093626A (ja) * 2003-09-17 2005-04-07 Sharp Corp 半導体装置および半導体装置の製造方法
JP2005321670A (ja) * 2004-05-11 2005-11-17 Sony Corp 薄膜半導体装置、液晶表示装置及び画像プロジェクタ装置
KR102089200B1 (ko) * 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5577124B2 (ja) * 2010-03-18 2014-08-20 株式会社ジャパンディスプレイ 有機半導体装置及びその製造方法
JP5708910B2 (ja) 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
JP2012033778A (ja) * 2010-07-30 2012-02-16 Dainippon Printing Co Ltd 薄膜トランジスタとその製造方法、薄膜トランジスタアレイとその製造方法、及び、ディスプレイ装置
CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
TWI644434B (zh) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6345023B2 (ja) 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN112038410A (zh) 2014-07-15 2020-12-04 株式会社半导体能源研究所 半导体装置及其制造方法以及包括半导体装置的显示装置
KR20180010205A (ko) 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102797576B1 (ko) * 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247414A (ja) 2003-02-12 2004-09-02 Sharp Corp トランジスタおよびその製造方法、並びに該トランジスタを用いた液晶表示装置
JP2008270637A (ja) * 2007-04-24 2008-11-06 Sharp Corp 薄膜トランジスタの製造方法及び薄膜トランジスタ
JP2011077515A (ja) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2015144266A (ja) * 2013-12-27 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
JP2018006728A (ja) * 2015-12-29 2018-01-11 株式会社半導体エネルギー研究所 金属酸化物膜、および半導体装置

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Publication number Publication date
US20250081534A1 (en) 2025-03-06
US12363955B2 (en) 2025-07-15
US11935963B2 (en) 2024-03-19
CN111868899B (zh) 2024-07-12
WO2019180539A1 (ja) 2019-09-26
JPWO2019180539A1 (ja) 2021-04-01
JP2025137572A (ja) 2025-09-19
CN111868899A (zh) 2020-10-30
US20220367723A1 (en) 2022-11-17
CN118507531A (zh) 2024-08-16
KR20200134262A (ko) 2020-12-01
US11430897B2 (en) 2022-08-30
JP2024037777A (ja) 2024-03-19
JP7397789B2 (ja) 2023-12-13
US20200411694A1 (en) 2020-12-31
KR20250057083A (ko) 2025-04-28

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