JP7344707B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP7344707B2 JP7344707B2 JP2019144689A JP2019144689A JP7344707B2 JP 7344707 B2 JP7344707 B2 JP 7344707B2 JP 2019144689 A JP2019144689 A JP 2019144689A JP 2019144689 A JP2019144689 A JP 2019144689A JP 7344707 B2 JP7344707 B2 JP 7344707B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- transistor
- metal oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 279
- 238000000034 method Methods 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 229910044991 metal oxide Inorganic materials 0.000 claims description 175
- 150000004706 metal oxides Chemical class 0.000 claims description 165
- 238000010438 heat treatment Methods 0.000 claims description 52
- 239000011701 zinc Substances 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 230000008021 deposition Effects 0.000 claims description 27
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052738 indium Inorganic materials 0.000 claims description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Chemical group 0.000 claims description 8
- 239000010936 titanium Chemical group 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Chemical group 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Chemical group 0.000 claims description 5
- -1 element M Chemical compound 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical group [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 806
- 239000010408 film Substances 0.000 description 252
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 143
- 239000001301 oxygen Substances 0.000 description 143
- 229910052760 oxygen Inorganic materials 0.000 description 143
- 239000000758 substrate Substances 0.000 description 87
- 239000012535 impurity Substances 0.000 description 78
- 230000006870 function Effects 0.000 description 76
- 239000007789 gas Substances 0.000 description 52
- 230000015572 biosynthetic process Effects 0.000 description 49
- 239000004973 liquid crystal related substance Substances 0.000 description 40
- 239000003990 capacitor Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 35
- 239000012298 atmosphere Substances 0.000 description 34
- 238000012360 testing method Methods 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 238000000151 deposition Methods 0.000 description 24
- 229910052739 hydrogen Inorganic materials 0.000 description 23
- 239000001257 hydrogen Substances 0.000 description 22
- 230000001965 increasing effect Effects 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 19
- 238000012545 processing Methods 0.000 description 17
- 239000011347 resin Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 239000013078 crystal Substances 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000009832 plasma treatment Methods 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000007547 defect Effects 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000005669 field effect Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000005477 sputtering target Methods 0.000 description 7
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 239000002159 nanocrystal Substances 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 210000005252 bulbus oculi Anatomy 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229960001730 nitrous oxide Drugs 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 210000002925 A-like Anatomy 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000005264 High molar mass liquid crystal Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical group [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 210000001508 eye Anatomy 0.000 description 1
- 210000000744 eyelid Anatomy 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical group [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
Description
本実施の形態では、本発明の一態様の半導体装置及びその作製方法について図1~図8を用いて説明する。本実施の形態では、半導体装置として、トランジスタについて具体的に説明する。
図1(A)に、トランジスタ100の上面図を示す。図1(B)に、図1(A)における一点鎖線A1-A2間の断面図を示す。図1(C)に、図1(A)における一点鎖線B1-B2間の断面図を示す。一点鎖線A1-A2方向はチャネル長方向、一点鎖線B1-B2方向はチャネル幅方向に相当する。なお、図1(A)では、トランジスタ100の構成要素の一部(ゲート絶縁層等)を省略して図示している。トランジスタの上面図については、以降の図面においても、図1(A)と同様に、構成要素の一部を省略して図示する。
図3(A)に、トランジスタ100Aの上面図を示す。図3(B)に、図3(A)における一点鎖線A1-A2間の断面図を示す。図3(C)に、図3(A)における一点鎖線B1-B2間の断面図を示す。一点鎖線A1-A2方向はチャネル長方向、一点鎖線B1-B2方向はチャネル幅方向に相当する。
次に、応用例として、トランジスタと容量素子を有する本発明の一態様の半導体装置について、図4を用いて説明する。具体的には、不純物を含む半導体層108cを容量素子の一方の電極として用い、トランジスタと容量素子とを同一面上に形成する例について説明する。
次に、本実施の形態の半導体装置に含まれる構成要素について、詳細に説明する。なお、既に説明した構成要素については説明を省略する場合がある。
次に、本発明の一態様のトランジスタの作製方法について図5~図8を用いて説明する。ここでは、構成例2で示したトランジスタ100Aの作製方法について説明する。図5~図8では、トランジスタの作製工程の各段階におけるチャネル長方向及びチャネル幅方向の断面を並べて示す。
本実施の形態では、本発明の一態様の半導体装置を有する表示装置について、図9~図13を用いて説明する。
図9(A)に、表示装置700の上面図を示す。表示装置700は、シール材712により貼り合わされた第1の基板701と第2の基板705を有する。第1の基板701、第2の基板705、及びシール材712で封止される領域に、画素部702、ソースドライバ704、及びゲートドライバ706が設けられる。画素部702には、複数の表示素子が設けられる。
図10及び図11に、表示素子として液晶素子を有する表示装置を示す。図12及び図13に、表示素子としてEL素子を有する表示装置を示す。図10、図11、及び図12は、それぞれ、図9(A)に示す一点鎖線Q-R間の断面図である。図13は、図9(B)に示す一点鎖線S-T間の断面図である。
本実施の形態では、本発明の一態様の半導体装置を有する表示装置について、図14を用いて説明する。
本実施の形態では、本発明の一態様の半導体装置を有する表示装置について、図15を用いて説明する。
図15(A)に、画素回路400の回路図を示す。画素回路400は、トランジスタM1、トランジスタM2、容量C1、及び回路401を有する。画素回路400には、配線S1、配線S2、配線G1、及び配線G2が接続される。
図15(B)を用いて、画素回路400の動作方法の一例を説明する。図15(B)は、画素回路400の動作に係るタイミングチャートである。なおここでは説明を容易にするため、配線抵抗などの各種抵抗や、トランジスタや配線などの寄生容量、及びトランジスタのしきい値電圧などの影響は考慮しない。
図15(C)に示す画素回路400LCは、回路401LCを有する。回路401LCは、液晶素子LCと、容量C2とを有する。
図15(D)に示す画素回路400ELは、回路401ELを有する。回路401ELは、発光素子EL、トランジスタM3、及び容量C2を有する。
本実施の形態では、本発明の一態様の表示モジュールについて、図16を用いて説明する。
本実施の形態では、本発明の一態様の電子機器について、図17~図20を用いて説明する。
100A トランジスタ
102 基板
103 絶縁層
103a 絶縁層
103b 絶縁層
103c 絶縁層
103d 領域
103e 絶縁層
106 導電層
106c 導電層
108 半導体層
108c 半導体層
108n 低抵抗領域
110 ゲート絶縁層
110a 絶縁層
110b 絶縁層
110c 絶縁層
110d 領域
112 ゲート電極
112f 導電膜
114 金属酸化物層
118 絶縁層
120a 導電層
120b 導電層
130A 容量素子
130B 容量素子
140 不純物元素
141a 開口部
141b 開口部
142 開口部
400 画素回路
400EL 画素回路
400LC 画素回路
401 回路
401EL 回路
401LC 回路
501 画素回路
502 画素部
504 駆動回路部
504a ゲートドライバ
504b ソースドライバ
506 保護回路
507 端子部
550 トランジスタ
552 トランジスタ
554 トランジスタ
560 容量素子
562 容量素子
570 液晶素子
572 発光素子
700 表示装置
700A 表示装置
700B 表示装置
701 第1の基板
702 画素部
704 ソースドライバ
705 第2の基板
706 ゲートドライバ
708 FPC端子部
710 信号線
711 配線部
712 シール材
716 FPC
717 IC
721 ソースドライバIC
722 ゲートドライバ
723 FPC
724 プリント基板
730 絶縁膜
732 封止膜
734 絶縁膜
736 着色膜
738 遮光膜
740 保護層
741 保護層
742 接着層
743 樹脂層
744 絶縁層
745 支持基板
746 樹脂層
750 トランジスタ
752 トランジスタ
760 配線
770 平坦化絶縁膜
772 導電層
773 絶縁層
774 導電層
775 液晶素子
776 液晶層
778 スペーサ
780 異方性導電膜
782 発光素子
786 EL層
788 導電膜
790 容量素子
6000 表示モジュール
6001 上部カバー
6002 下部カバー
6005 FPC
6006 表示装置
6009 フレーム
6010 プリント基板
6011 バッテリ
6015 発光部
6016 受光部
6017a 導光部
6017b 導光部
6018 光
6500 電子機器
6501 筐体
6502 表示部
6503 電源ボタン
6504 ボタン
6505 スピーカ
6506 マイク
6507 カメラ
6508 光源
6510 保護部材
6511 表示パネル
6512 光学部材
6513 タッチセンサパネル
6515 FPC
6516 IC
6517 プリント基板
6518 バッテリ
7000 表示部
7100 テレビジョン装置
7101 筐体
7103 スタンド
7111 リモコン操作機
7200 ノート型パーソナルコンピュータ
7211 筐体
7212 キーボード
7213 ポインティングデバイス
7214 外部接続ポート
7300 デジタルサイネージ
7301 筐体
7303 スピーカ
7311 情報端末機
7400 デジタルサイネージ
7401 柱
7411 情報端末機
8000 カメラ
8001 筐体
8002 表示部
8003 操作ボタン
8004 シャッターボタン
8006 レンズ
8100 ファインダー
8101 筐体
8102 表示部
8103 ボタン
8200 ヘッドマウントディスプレイ
8201 装着部
8202 レンズ
8203 本体
8204 表示部
8205 ケーブル
8206 バッテリ
8300 ヘッドマウントディスプレイ
8301 筐体
8302 表示部
8304 固定具
8305 レンズ
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9050 アイコン
9051 情報
9052 情報
9053 情報
9054 情報
9055 ヒンジ
9101 携帯情報端末
9102 携帯情報端末
9200 携帯情報端末
9201 携帯情報端末
Claims (9)
- 金属酸化物を含む半導体層を形成し、
前記半導体層上に、酸化物を含むゲート絶縁層を形成し、
前記ゲート絶縁層上に、金属酸化物層を形成し、
前記金属酸化物層を形成した後に、加熱処理を行い、
前記加熱処理後、前記金属酸化物層を除去し、
前記金属酸化物層を除去後、前記ゲート絶縁層上に、前記半導体層の一部と重なるゲート電極を形成し、
前記ゲート電極を形成後、前記ゲート電極及び前記ゲート絶縁層を介して、第1の元素を供給し、
前記第1の元素は、リン、ホウ素、マグネシウム、アルミニウム、またはシリコンである、半導体装置の作製方法。 - 請求項1において、
前記金属酸化物層は、酸化アルミニウム膜を有する、半導体装置の作製方法。 - 請求項1において、
前記金属酸化物層及び前記半導体層は、同一の金属酸化物を有する、半導体装置の作製方法。 - 請求項1乃至3のいずれか一において、
前記金属酸化物層を除去した後に行う工程は、それぞれ、前記加熱処理の温度以下の温度で行う、半導体装置の作製方法。 - 請求項1乃至4のいずれか一において、
前記ゲート絶縁層は、前記半導体層上の第1の層、前記第1の層上の第2の層、及び前記第2の層上の第3の層を有し、
前記第1の層の成膜速度は、前記第2の層の成膜速度よりも低く、
前記第3の層の成膜速度は、前記第2の層の成膜速度よりも低い、半導体装置の作製方法。 - 請求項1乃至5のいずれか一において、
前記半導体層は、インジウム及び亜鉛の少なくとも一方を有する、半導体装置の作製方法。 - 請求項1乃至6のいずれか一において、
前記半導体層は、インジウム、元素M、及び亜鉛を有し、
前記元素Mは、ガリウム、アルミニウム、シリコン、ホウ素、イットリウム、スズ、銅、バナジウム、ベリリウム、チタン、鉄、ニッケル、ゲルマニウム、ジルコニウム、モリブデン、ランタン、セリウム、ネオジム、ハフニウム、タンタル、タングステン、及びマグネシウムのうち少なくとも一つである、半導体装置の作製方法。 - 請求項7において、
前記元素Mは、ガリウム、アルミニウム、イットリウム、及びスズのうち少なくとも一つである、半導体装置の作製方法。 - 請求項1乃至8のいずれか一において、
前記半導体層は、インジウム、ガリウム、及び亜鉛を有する、半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023143832A JP2023168348A (ja) | 2018-08-09 | 2023-09-05 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018149954 | 2018-08-09 | ||
JP2018149954 | 2018-08-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023143832A Division JP2023168348A (ja) | 2018-08-09 | 2023-09-05 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020027942A JP2020027942A (ja) | 2020-02-20 |
JP2020027942A5 JP2020027942A5 (ja) | 2022-08-09 |
JP7344707B2 true JP7344707B2 (ja) | 2023-09-14 |
Family
ID=69407116
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019144689A Active JP7344707B2 (ja) | 2018-08-09 | 2019-08-06 | 半導体装置の作製方法 |
JP2023143832A Pending JP2023168348A (ja) | 2018-08-09 | 2023-09-05 | 半導体装置の作製方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023143832A Pending JP2023168348A (ja) | 2018-08-09 | 2023-09-05 | 半導体装置の作製方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11069796B2 (ja) |
JP (2) | JP7344707B2 (ja) |
KR (1) | KR20200018281A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112002706B (zh) * | 2020-08-10 | 2022-09-09 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
WO2023189549A1 (ja) * | 2022-03-30 | 2023-10-05 | 株式会社ジャパンディスプレイ | 半導体装置及び半導体装置の製造方法 |
JP7382608B1 (ja) | 2022-05-31 | 2023-11-17 | 国立大学法人東京農工大学 | 固定電荷発現方法、薄膜トランジスタの製造方法及び薄膜トランジスタ |
JP7464863B2 (ja) | 2022-05-31 | 2024-04-10 | 日新電機株式会社 | 固定電荷制御方法、薄膜トランジスタの製造方法及び薄膜トランジスタ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013128106A (ja) | 2011-11-18 | 2013-06-27 | Semiconductor Energy Lab Co Ltd | 絶縁膜およびその形成方法、ならびに半導体装置およびその作製方法 |
JP2013175714A (ja) | 2012-01-26 | 2013-09-05 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011074407A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5708910B2 (ja) | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
US9490368B2 (en) * | 2010-05-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
WO2011145467A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011155502A1 (en) * | 2010-06-11 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8883556B2 (en) | 2010-12-28 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9653614B2 (en) | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9859114B2 (en) | 2012-02-08 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device with an oxygen-controlling insulating layer |
JP6220526B2 (ja) | 2012-02-29 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR102071545B1 (ko) | 2012-05-31 | 2020-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6383616B2 (ja) * | 2013-09-25 | 2018-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20230065379A (ko) | 2013-12-27 | 2023-05-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9564535B2 (en) | 2014-02-28 | 2017-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module |
CN106104772B (zh) | 2014-02-28 | 2020-11-10 | 株式会社半导体能源研究所 | 半导体装置以及具有该半导体装置的显示装置 |
JP6559444B2 (ja) | 2014-03-14 | 2019-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9887291B2 (en) | 2014-03-19 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module |
US9768315B2 (en) | 2014-04-18 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device having the same |
TWI669761B (zh) | 2014-05-30 | 2019-08-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置、包括該半導體裝置的顯示裝置 |
TWI666776B (zh) | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及包括該半導體裝置的顯示裝置 |
JP6676316B2 (ja) | 2014-09-12 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US11024725B2 (en) | 2015-07-24 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide film |
WO2017064590A1 (en) | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20170104090A1 (en) | 2015-10-12 | 2017-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9852926B2 (en) | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
US10714633B2 (en) * | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US10205008B2 (en) | 2016-08-03 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP7126823B2 (ja) | 2016-12-23 | 2022-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2019
- 2019-07-30 US US16/526,389 patent/US11069796B2/en active Active
- 2019-08-02 KR KR1020190094393A patent/KR20200018281A/ko unknown
- 2019-08-06 JP JP2019144689A patent/JP7344707B2/ja active Active
-
2023
- 2023-09-05 JP JP2023143832A patent/JP2023168348A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013128106A (ja) | 2011-11-18 | 2013-06-27 | Semiconductor Energy Lab Co Ltd | 絶縁膜およびその形成方法、ならびに半導体装置およびその作製方法 |
JP2013175714A (ja) | 2012-01-26 | 2013-09-05 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20200018281A (ko) | 2020-02-19 |
JP2020027942A (ja) | 2020-02-20 |
JP2023168348A (ja) | 2023-11-24 |
US11069796B2 (en) | 2021-07-20 |
US20200052100A1 (en) | 2020-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7344707B2 (ja) | 半導体装置の作製方法 | |
JP7183184B2 (ja) | 半導体装置 | |
WO2020089726A1 (ja) | 半導体装置 | |
JP7462391B2 (ja) | 半導体装置 | |
JP7242633B2 (ja) | 半導体装置、および半導体装置の作製方法 | |
JP2023166508A (ja) | 半導体装置の作製方法 | |
JP7462087B2 (ja) | 半導体装置 | |
JP2023118763A (ja) | 半導体装置の作製方法 | |
JP7475282B2 (ja) | 半導体装置 | |
JP2023017043A (ja) | 半導体装置 | |
JP2024037777A (ja) | 半導体装置の作製方法 | |
WO2020089762A1 (ja) | 半導体装置 | |
WO2021028750A1 (ja) | 半導体装置、および半導体装置の作製方法 | |
JP2021019197A (ja) | 半導体装置 | |
WO2020074993A1 (ja) | 半導体装置 | |
JP7275112B2 (ja) | 半導体装置 | |
WO2022130086A1 (ja) | 半導体装置 | |
WO2020012276A1 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220801 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220801 |
|
TRDD | Decision of grant or rejection written | ||
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230728 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230808 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230904 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7344707 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |