CN118507531A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN118507531A
CN118507531A CN202410718963.9A CN202410718963A CN118507531A CN 118507531 A CN118507531 A CN 118507531A CN 202410718963 A CN202410718963 A CN 202410718963A CN 118507531 A CN118507531 A CN 118507531A
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CN
China
Prior art keywords
insulating layer
region
layer
oxygen
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410718963.9A
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English (en)
Chinese (zh)
Inventor
肥塚纯一
中泽安孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN118507531A publication Critical patent/CN118507531A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
    • G01N23/2273—Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
CN202410718963.9A 2018-03-23 2019-03-12 半导体装置 Pending CN118507531A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018056918 2018-03-23
JP2018-056918 2018-03-23
CN201980019782.4A CN111868899B (zh) 2018-03-23 2019-03-12 半导体装置
PCT/IB2019/051968 WO2019180539A1 (ja) 2018-03-23 2019-03-12 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980019782.4A Division CN111868899B (zh) 2018-03-23 2019-03-12 半导体装置

Publications (1)

Publication Number Publication Date
CN118507531A true CN118507531A (zh) 2024-08-16

Family

ID=67986839

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202410718963.9A Pending CN118507531A (zh) 2018-03-23 2019-03-12 半导体装置
CN201980019782.4A Active CN111868899B (zh) 2018-03-23 2019-03-12 半导体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201980019782.4A Active CN111868899B (zh) 2018-03-23 2019-03-12 半导体装置

Country Status (5)

Country Link
US (3) US11430897B2 (https=)
JP (3) JP7397789B2 (https=)
KR (2) KR102797576B1 (https=)
CN (2) CN118507531A (https=)
WO (1) WO2019180539A1 (https=)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
KR102797576B1 (ko) 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN116157858A (zh) * 2020-08-05 2023-05-23 贝尔-赫拉恒温控制有限公司 用于显示信息的设备，特别是用于车辆的设备
EP4160697B1 (en) * 2020-12-01 2026-04-22 BOE Technology Group Co., Ltd. Oxide thin film transistor and preparation method therefor, and display device
JP7589050B2 (ja) * 2021-01-15 2024-11-25 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP2024039361A (ja) * 2022-09-09 2024-03-22 株式会社ジャパンディスプレイ 半導体装置
JP2024051551A (ja) * 2022-09-30 2024-04-11 株式会社ジャパンディスプレイ 半導体装置
JP2024053987A (ja) * 2022-10-04 2024-04-16 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

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JP2819694B2 (ja) * 1989-11-17 1998-10-30 富士ゼロックス株式会社 Ｍｏｓ型半導体装置の製造方法
JP2903134B2 (ja) * 1990-11-10 1999-06-07 株式会社 半導体エネルギー研究所 半導体装置
US5672907A (en) 1995-03-22 1997-09-30 Nippon Steel Corporation Semiconductor device having character in BPSG film
JPH08321502A (ja) * 1995-03-22 1996-12-03 Nippon Steel Corp 半導体装置
JP4599603B2 (ja) * 2003-02-12 2010-12-15 シャープ株式会社 トランジスタの製造方法
JP2005093626A (ja) * 2003-09-17 2005-04-07 Sharp Corp 半導体装置および半導体装置の製造方法
JP2005321670A (ja) * 2004-05-11 2005-11-17 Sony Corp 薄膜半導体装置、液晶表示装置及び画像プロジェクタ装置
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KR101836532B1 (ko) 2009-09-04 2018-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102089200B1 (ko) * 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5577124B2 (ja) * 2010-03-18 2014-08-20 株式会社ジャパンディスプレイ 有機半導体装置及びその製造方法
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TWI644434B (zh) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
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KR20180010205A (ko) 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
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KR102797576B1 (ko) * 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Also Published As

Publication number Publication date
US20250081534A1 (en) 2025-03-06
US12363955B2 (en) 2025-07-15
KR102797576B1 (ko) 2025-04-22
US11935963B2 (en) 2024-03-19
CN111868899B (zh) 2024-07-12
WO2019180539A1 (ja) 2019-09-26
JPWO2019180539A1 (ja) 2021-04-01
JP2025137572A (ja) 2025-09-19
CN111868899A (zh) 2020-10-30
US20220367723A1 (en) 2022-11-17
KR20200134262A (ko) 2020-12-01
US11430897B2 (en) 2022-08-30
JP2024037777A (ja) 2024-03-19
JP7397789B2 (ja) 2023-12-13
US20200411694A1 (en) 2020-12-31
KR20250057083A (ko) 2025-04-28

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