JPWO2021038361A5 - - Google Patents
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- Publication number
- JPWO2021038361A5 JPWO2021038361A5 JP2021542304A JP2021542304A JPWO2021038361A5 JP WO2021038361 A5 JPWO2021038361 A5 JP WO2021038361A5 JP 2021542304 A JP2021542304 A JP 2021542304A JP 2021542304 A JP2021542304 A JP 2021542304A JP WO2021038361 A5 JPWO2021038361 A5 JP WO2021038361A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- conductor
- semiconductor device
- nitride
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 55
- 239000004020 conductor Substances 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 13
- 150000004767 nitrides Chemical class 0.000 claims 6
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910017107 AlOx Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025016271A JP2025065235A (ja) | 2019-08-30 | 2025-02-03 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019158456 | 2019-08-30 | ||
| JP2019158456 | 2019-08-30 | ||
| PCT/IB2020/057714 WO2021038361A1 (ja) | 2019-08-30 | 2020-08-17 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025016271A Division JP2025065235A (ja) | 2019-08-30 | 2025-02-03 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021038361A1 JPWO2021038361A1 (https=) | 2021-03-04 |
| JPWO2021038361A5 true JPWO2021038361A5 (https=) | 2023-08-21 |
| JP7629856B2 JP7629856B2 (ja) | 2025-02-14 |
Family
ID=74683598
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021542304A Active JP7629856B2 (ja) | 2019-08-30 | 2020-08-17 | 半導体装置 |
| JP2025016271A Pending JP2025065235A (ja) | 2019-08-30 | 2025-02-03 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025016271A Pending JP2025065235A (ja) | 2019-08-30 | 2025-02-03 | 半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US12538523B2 (https=) |
| JP (2) | JP7629856B2 (https=) |
| KR (1) | KR20220052972A (https=) |
| CN (1) | CN114223060A (https=) |
| DE (1) | DE112020004134T5 (https=) |
| TW (1) | TW202129877A (https=) |
| WO (1) | WO2021038361A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230111510A (ko) | 2022-01-18 | 2023-07-25 | 삼성전자주식회사 | 반도체 장치 |
| WO2023180859A1 (ja) * | 2022-03-25 | 2023-09-28 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| US20250015191A1 (en) * | 2023-07-06 | 2025-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
| WO2025017441A1 (ja) * | 2023-07-20 | 2025-01-23 | 株式会社半導体エネルギー研究所 | 製造装置、及び、半導体装置の作製方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| TWI574259B (zh) | 2010-09-29 | 2017-03-11 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置和其驅動方法 |
| KR102108572B1 (ko) | 2011-09-26 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR102069158B1 (ko) | 2012-05-10 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법 |
| JP6607681B2 (ja) | 2014-03-07 | 2019-11-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102788207B1 (ko) * | 2015-04-13 | 2025-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2017081579A1 (en) | 2015-11-13 | 2017-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9917207B2 (en) | 2015-12-25 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US10032918B2 (en) * | 2016-04-22 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102605250B1 (ko) | 2016-08-30 | 2023-11-27 | 삼성디스플레이 주식회사 | 반도체 장치 및 그 제조 방법 |
| CN108075038A (zh) * | 2016-11-11 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | 动态随机存储器及其形成方法 |
| TW201836020A (zh) | 2017-02-17 | 2018-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| JP2018206828A (ja) * | 2017-05-31 | 2018-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JPWO2019048987A1 (ja) | 2017-09-06 | 2020-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP7229669B2 (ja) * | 2017-11-17 | 2023-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
-
2020
- 2020-08-11 TW TW109127206A patent/TW202129877A/zh unknown
- 2020-08-17 CN CN202080057006.6A patent/CN114223060A/zh active Pending
- 2020-08-17 KR KR1020227009603A patent/KR20220052972A/ko active Pending
- 2020-08-17 DE DE112020004134.4T patent/DE112020004134T5/de active Pending
- 2020-08-17 JP JP2021542304A patent/JP7629856B2/ja active Active
- 2020-08-17 WO PCT/IB2020/057714 patent/WO2021038361A1/ja not_active Ceased
- 2020-08-17 US US17/634,564 patent/US12538523B2/en active Active
-
2025
- 2025-02-03 JP JP2025016271A patent/JP2025065235A/ja active Pending
- 2025-12-12 US US19/417,435 patent/US20260101540A1/en active Pending
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