KR20220052972A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20220052972A
KR20220052972A KR1020227009603A KR20227009603A KR20220052972A KR 20220052972 A KR20220052972 A KR 20220052972A KR 1020227009603 A KR1020227009603 A KR 1020227009603A KR 20227009603 A KR20227009603 A KR 20227009603A KR 20220052972 A KR20220052972 A KR 20220052972A
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KR
South Korea
Prior art keywords
insulator
conductor
oxide
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227009603A
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English (en)
Korean (ko)
Inventor
순페이 야마자키
요시노리 안도
료타 호도
타카시 히로세
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220052972A publication Critical patent/KR20220052972A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H01L27/0727—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020227009603A 2019-08-30 2020-08-17 반도체 장치 Pending KR20220052972A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019158456 2019-08-30
JPJP-P-2019-158456 2019-08-30
PCT/IB2020/057714 WO2021038361A1 (ja) 2019-08-30 2020-08-17 半導体装置

Publications (1)

Publication Number Publication Date
KR20220052972A true KR20220052972A (ko) 2022-04-28

Family

ID=74683598

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227009603A Pending KR20220052972A (ko) 2019-08-30 2020-08-17 반도체 장치

Country Status (7)

Country Link
US (2) US12538523B2 (https=)
JP (2) JP7629856B2 (https=)
KR (1) KR20220052972A (https=)
CN (1) CN114223060A (https=)
DE (1) DE112020004134T5 (https=)
TW (1) TW202129877A (https=)
WO (1) WO2021038361A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230111510A (ko) 2022-01-18 2023-07-25 삼성전자주식회사 반도체 장치
WO2023180859A1 (ja) * 2022-03-25 2023-09-28 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US20250015191A1 (en) * 2023-07-06 2025-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
WO2025017441A1 (ja) * 2023-07-20 2025-01-23 株式会社半導体エネルギー研究所 製造装置、及び、半導体装置の作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
KR102108572B1 (ko) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
KR102788207B1 (ko) * 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2017081579A1 (en) 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9917207B2 (en) 2015-12-25 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10032918B2 (en) * 2016-04-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102605250B1 (ko) 2016-08-30 2023-11-27 삼성디스플레이 주식회사 반도체 장치 및 그 제조 방법
CN108075038A (zh) * 2016-11-11 2018-05-25 中芯国际集成电路制造(上海)有限公司 动态随机存储器及其形成方法
TW201836020A (zh) 2017-02-17 2018-10-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP2018206828A (ja) * 2017-05-31 2018-12-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JPWO2019048987A1 (ja) 2017-09-06 2020-10-15 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7229669B2 (ja) * 2017-11-17 2023-02-28 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

Also Published As

Publication number Publication date
JPWO2021038361A1 (https=) 2021-03-04
US20260101540A1 (en) 2026-04-09
CN114223060A (zh) 2022-03-22
JP2025065235A (ja) 2025-04-17
DE112020004134T5 (de) 2022-05-19
US12538523B2 (en) 2026-01-27
TW202129877A (zh) 2021-08-01
WO2021038361A1 (ja) 2021-03-04
US20220278235A1 (en) 2022-09-01
JP7629856B2 (ja) 2025-02-14

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