JPWO2019220266A5 - - Google Patents
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- Publication number
- JPWO2019220266A5 JPWO2019220266A5 JP2020519204A JP2020519204A JPWO2019220266A5 JP WO2019220266 A5 JPWO2019220266 A5 JP WO2019220266A5 JP 2020519204 A JP2020519204 A JP 2020519204A JP 2020519204 A JP2020519204 A JP 2020519204A JP WO2019220266 A5 JPWO2019220266 A5 JP WO2019220266A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- insulator
- oxide
- film
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims 62
- 239000012212 insulator Substances 0.000 claims 47
- 239000004065 semiconductor Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018095917 | 2018-05-18 | ||
| JP2018095850 | 2018-05-18 | ||
| JP2018095850 | 2018-05-18 | ||
| JP2018095917 | 2018-05-18 | ||
| PCT/IB2019/053757 WO2019220266A1 (ja) | 2018-05-18 | 2019-05-08 | 半導体装置、および半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2019220266A1 JPWO2019220266A1 (ja) | 2021-06-10 |
| JPWO2019220266A5 true JPWO2019220266A5 (https=) | 2022-05-13 |
| JP7235418B2 JP7235418B2 (ja) | 2023-03-08 |
Family
ID=68539860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020519204A Active JP7235418B2 (ja) | 2018-05-18 | 2019-05-08 | 半導体装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20210242207A1 (https=) |
| JP (1) | JP7235418B2 (https=) |
| TW (1) | TWI809100B (https=) |
| WO (1) | WO2019220266A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10734419B2 (en) | 2018-10-31 | 2020-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Imaging device with uniform photosensitive region array |
| US11721767B2 (en) | 2020-06-29 | 2023-08-08 | Taiwan Semiconductor Manufacturing Company Limited | Oxide semiconductor transistor structure in 3-D device and methods of forming the same |
| KR20250022704A (ko) * | 2022-06-10 | 2025-02-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 기억 장치, 및 반도체 장치의 제작 방법 |
| WO2026028042A1 (ja) * | 2024-08-01 | 2026-02-05 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4190612B2 (ja) * | 1998-04-09 | 2008-12-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3833903B2 (ja) * | 2000-07-11 | 2006-10-18 | 株式会社東芝 | 半導体装置の製造方法 |
| JP4748967B2 (ja) * | 2003-11-04 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6231735B2 (ja) * | 2011-06-01 | 2017-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9190525B2 (en) * | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
| WO2015060133A1 (en) * | 2013-10-22 | 2015-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20160102295A (ko) * | 2013-12-26 | 2016-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2015149414A (ja) | 2014-02-06 | 2015-08-20 | 株式会社東芝 | 半導体装置及び撮像装置 |
| JP6545976B2 (ja) * | 2014-03-07 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102373263B1 (ko) | 2014-05-30 | 2022-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제조하기 위한 방법 |
| US10424671B2 (en) * | 2015-07-29 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, circuit board, and electronic device |
| JP6853663B2 (ja) | 2015-12-28 | 2021-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9905657B2 (en) | 2016-01-20 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| WO2017175095A1 (en) * | 2016-04-08 | 2017-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN109478514A (zh) * | 2016-07-26 | 2019-03-15 | 株式会社半导体能源研究所 | 半导体装置 |
-
2019
- 2019-05-08 US US17/052,589 patent/US20210242207A1/en not_active Abandoned
- 2019-05-08 WO PCT/IB2019/053757 patent/WO2019220266A1/ja not_active Ceased
- 2019-05-08 JP JP2020519204A patent/JP7235418B2/ja active Active
- 2019-05-10 TW TW108116298A patent/TWI809100B/zh active
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