JP2024000519A5 - - Google Patents
Info
- Publication number
- JP2024000519A5 JP2024000519A5 JP2023097587A JP2023097587A JP2024000519A5 JP 2024000519 A5 JP2024000519 A5 JP 2024000519A5 JP 2023097587 A JP2023097587 A JP 2023097587A JP 2023097587 A JP2023097587 A JP 2023097587A JP 2024000519 A5 JP2024000519 A5 JP 2024000519A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- conductor
- oxide
- depositing
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022098829 | 2022-06-20 | ||
| JP2022098829 | 2022-06-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024000519A JP2024000519A (ja) | 2024-01-05 |
| JP2024000519A5 true JP2024000519A5 (https=) | 2026-02-20 |
Family
ID=89169390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023097587A Pending JP2024000519A (ja) | 2022-06-20 | 2023-06-14 | 半導体装置の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12581747B2 (https=) |
| JP (1) | JP2024000519A (https=) |
| KR (1) | KR20230174174A (https=) |
| CN (1) | CN117276190A (https=) |
| TW (1) | TW202410195A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12581747B2 (en) * | 2022-06-20 | 2026-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2026009123A1 (ja) * | 2024-07-05 | 2026-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| TWI770659B (zh) * | 2008-07-31 | 2022-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| US9666719B2 (en) * | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8344387B2 (en) * | 2008-11-28 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5564331B2 (ja) * | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2011068028A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and method for manufacturing the same |
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| CN113793872A (zh) * | 2014-12-10 | 2021-12-14 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| KR102865410B1 (ko) | 2015-02-06 | 2025-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US9882061B2 (en) * | 2015-03-17 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6887243B2 (ja) * | 2015-12-11 | 2021-06-16 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、電子機器及び半導ウエハ |
| JPWO2018215878A1 (ja) * | 2017-05-26 | 2020-03-26 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11088286B2 (en) * | 2017-09-15 | 2021-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR102668377B1 (ko) * | 2017-12-08 | 2024-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US11133420B2 (en) * | 2017-12-27 | 2021-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP7186732B2 (ja) | 2018-02-08 | 2022-12-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102755187B1 (ko) * | 2018-02-23 | 2025-01-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US11245040B2 (en) * | 2018-03-02 | 2022-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR20200127993A (ko) * | 2018-03-07 | 2020-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US11257960B2 (en) * | 2018-03-29 | 2022-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US11508850B2 (en) * | 2018-09-05 | 2022-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| TW202339171A (zh) * | 2021-09-21 | 2023-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TW202329333A (zh) * | 2021-11-30 | 2023-07-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置、半導體裝置的製造方法 |
| CN119325749A (zh) * | 2022-06-10 | 2025-01-17 | 株式会社半导体能源研究所 | 半导体装置、存储装置及半导体装置的制造方法 |
| US12581747B2 (en) * | 2022-06-20 | 2026-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
-
2023
- 2023-06-09 US US18/207,821 patent/US12581747B2/en active Active
- 2023-06-13 CN CN202310699385.4A patent/CN117276190A/zh active Pending
- 2023-06-13 TW TW112121991A patent/TW202410195A/zh unknown
- 2023-06-14 JP JP2023097587A patent/JP2024000519A/ja active Pending
- 2023-06-15 KR KR1020230076691A patent/KR20230174174A/ko active Pending
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