JPWO2020201873A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2020201873A5 JPWO2020201873A5 JP2021510575A JP2021510575A JPWO2020201873A5 JP WO2020201873 A5 JPWO2020201873 A5 JP WO2020201873A5 JP 2021510575 A JP2021510575 A JP 2021510575A JP 2021510575 A JP2021510575 A JP 2021510575A JP WO2020201873 A5 JPWO2020201873 A5 JP WO2020201873A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- insulator
- layer
- film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000004020 conductor Substances 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019066884 | 2019-03-29 | ||
| JP2019066884 | 2019-03-29 | ||
| PCT/IB2020/052490 WO2020201873A1 (ja) | 2019-03-29 | 2020-03-19 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020201873A1 JPWO2020201873A1 (https=) | 2020-10-08 |
| JPWO2020201873A5 true JPWO2020201873A5 (https=) | 2023-03-28 |
| JP7555906B2 JP7555906B2 (ja) | 2024-09-25 |
Family
ID=72666573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021510575A Active JP7555906B2 (ja) | 2019-03-29 | 2020-03-19 | 半導体装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12082390B2 (https=) |
| JP (1) | JP7555906B2 (https=) |
| WO (1) | WO2020201873A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7805298B2 (ja) | 2020-08-21 | 2026-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US12538495B2 (en) | 2020-09-06 | 2026-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, capacitor, and manufacturing method thereof |
| CN116114019A (zh) | 2020-09-22 | 2023-05-12 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| TW202213766A (zh) * | 2020-09-22 | 2022-04-01 | 日商半導體能源研究所股份有限公司 | 鐵電體器件及半導體裝置 |
| WO2022106956A1 (ja) | 2020-11-20 | 2022-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP4730956A1 (en) * | 2024-10-16 | 2026-04-22 | LG Display Co., Ltd. | Thin film transistor, method for manufacturing the same, thin film transistor substrate, and display apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI538218B (zh) | 2010-09-14 | 2016-06-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| WO2014188982A1 (en) * | 2013-05-20 | 2014-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10692994B2 (en) | 2016-12-23 | 2020-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US20190348537A1 (en) * | 2016-12-27 | 2019-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN110402497B (zh) | 2017-03-29 | 2024-08-06 | 株式会社半导体能源研究所 | 半导体装置、半导体装置的制造方法 |
-
2020
- 2020-03-19 US US17/439,500 patent/US12082390B2/en active Active
- 2020-03-19 JP JP2021510575A patent/JP7555906B2/ja active Active
- 2020-03-19 WO PCT/IB2020/052490 patent/WO2020201873A1/ja not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPWO2020201873A5 (https=) | ||
| CN100466208C (zh) | 随机存取存储器及其制造方法 | |
| JPWO2020229914A5 (ja) | 半導体装置の作製方法 | |
| JPS6281764A (ja) | 炭化シリコン電界効果トランジスタの製造方法 | |
| KR102056407B1 (ko) | 금속 산화물 반도체층의 전기 전도도를 증가시키기 위한 방법 | |
| JPWO2021144666A5 (ja) | 半導体装置の作製方法 | |
| JPWO2020049396A5 (ja) | 半導体装置の作製方法 | |
| CN111640797A (zh) | 半导体器件的制作方法 | |
| JP2024000519A5 (https=) | ||
| CN104217990A (zh) | 一种形成接触孔的方法 | |
| WO2019015287A1 (zh) | 薄膜晶体管及制作方法、显示装置 | |
| JP2018073995A5 (https=) | ||
| CN118510382A (zh) | Mim电容器及其制造方法 | |
| WO2016169162A1 (zh) | 一种制作阵列基板的方法及其阵列基板和显示装置 | |
| TW200522263A (en) | Method for forming conductive line of semiconductor device | |
| JPWO2022043809A5 (https=) | ||
| JP2020027825A5 (https=) | ||
| CN113223933A (zh) | 功率器件制造过程中去除多晶硅残留的方法及其功率器件 | |
| JPWO2021005432A5 (https=) | ||
| JP2001291869A (ja) | 半導体装置及びその製造方法 | |
| CN207165577U (zh) | 一种SiC欧姆接触结构 | |
| TW468271B (en) | Thin film resistor used in a semiconductor chip and its manufacturing method | |
| CN110867410A (zh) | 一种显示面板及其制作方法 | |
| JPH039572A (ja) | 半導体装置の製造方法 | |
| CN115132761A (zh) | 显示面板 |