JPWO2021005432A5 - - Google Patents

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JPWO2021005432A5
JPWO2021005432A5 JP2021531205A JP2021531205A JPWO2021005432A5 JP WO2021005432 A5 JPWO2021005432 A5 JP WO2021005432A5 JP 2021531205 A JP2021531205 A JP 2021531205A JP 2021531205 A JP2021531205 A JP 2021531205A JP WO2021005432 A5 JPWO2021005432 A5 JP WO2021005432A5
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Japan
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oxide
insulating film
conductors
insulators
forming
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JP2021531205A
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Japanese (ja)
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JPWO2021005432A1 (https=
JP7686557B2 (ja
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Priority claimed from PCT/IB2020/055843 external-priority patent/WO2021005432A1/ja
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JP2021531205A 2019-07-05 2020-06-22 半導体装置の作製方法 Active JP7686557B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019125823 2019-07-05
JP2019125823 2019-07-05
PCT/IB2020/055843 WO2021005432A1 (ja) 2019-07-05 2020-06-22 半導体装置、および半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPWO2021005432A1 JPWO2021005432A1 (https=) 2021-01-14
JPWO2021005432A5 true JPWO2021005432A5 (https=) 2023-06-28
JP7686557B2 JP7686557B2 (ja) 2025-06-02

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JP2021531205A Active JP7686557B2 (ja) 2019-07-05 2020-06-22 半導体装置の作製方法

Country Status (6)

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US (1) US12219771B2 (https=)
JP (1) JP7686557B2 (https=)
KR (1) KR20220027850A (https=)
CN (1) CN114127957A (https=)
TW (1) TWI859261B (https=)
WO (1) WO2021005432A1 (https=)

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294660A (ja) * 1999-04-06 2000-10-20 Sony Corp 不揮発性半導体記憶装置およびその駆動方法
JP3638880B2 (ja) * 2001-04-04 2005-04-13 株式会社ヤマシン工業所 コンクリートブロック
JP2003188287A (ja) * 2001-12-18 2003-07-04 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5301123B2 (ja) 2007-07-25 2013-09-25 スパンション エルエルシー 半導体装置及びその製造方法
US20100213458A1 (en) 2009-02-23 2010-08-26 Micron Technology, Inc. Rigid semiconductor memory having amorphous metal oxide semiconductor channels
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102754022B (zh) 2010-02-26 2016-11-09 株式会社半导体能源研究所 液晶显示装置
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
JP2012069583A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
CN103022012B (zh) 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
US9287406B2 (en) * 2013-06-06 2016-03-15 Macronix International Co., Ltd. Dual-mode transistor devices and methods for operating same
JP2017010951A (ja) 2014-01-10 2017-01-12 株式会社東芝 半導体記憶装置及びその製造方法
WO2015105049A2 (en) 2014-01-10 2015-07-16 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing same
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP6968567B2 (ja) 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN110998585B (zh) 2017-06-22 2024-07-16 株式会社半导体能源研究所 布局设计系统及布局设计方法
US10475812B2 (en) * 2018-02-02 2019-11-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin-film transistor strings
US10978563B2 (en) 2018-12-21 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20200365612A1 (en) * 2019-05-16 2020-11-19 Macronix International Co., Ltd. Three dimensional memory device and method for fabricating the same
JP7618404B2 (ja) 2019-07-12 2025-01-21 株式会社半導体エネルギー研究所 記憶装置

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