JP7686557B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP7686557B2
JP7686557B2 JP2021531205A JP2021531205A JP7686557B2 JP 7686557 B2 JP7686557 B2 JP 7686557B2 JP 2021531205 A JP2021531205 A JP 2021531205A JP 2021531205 A JP2021531205 A JP 2021531205A JP 7686557 B2 JP7686557 B2 JP 7686557B2
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oxide
insulator
conductor
film
transistor
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JPWO2021005432A1 (https=
JPWO2021005432A5 (https=
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達也 大貫
隆徳 松嵜
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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JP2021531205A 2019-07-05 2020-06-22 半導体装置の作製方法 Active JP7686557B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019125823 2019-07-05
JP2019125823 2019-07-05
PCT/IB2020/055843 WO2021005432A1 (ja) 2019-07-05 2020-06-22 半導体装置、および半導体装置の作製方法

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JPWO2021005432A1 JPWO2021005432A1 (https=) 2021-01-14
JPWO2021005432A5 JPWO2021005432A5 (https=) 2023-06-28
JP7686557B2 true JP7686557B2 (ja) 2025-06-02

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US (1) US12219771B2 (https=)
JP (1) JP7686557B2 (https=)
KR (1) KR20220027850A (https=)
CN (1) CN114127957A (https=)
TW (1) TWI859261B (https=)
WO (1) WO2021005432A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294660A (ja) 1999-04-06 2000-10-20 Sony Corp 不揮発性半導体記憶装置およびその駆動方法
JP2003188287A (ja) 2001-12-18 2003-07-04 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2009032804A (ja) 2007-07-25 2009-02-12 Spansion Llc 半導体装置及びその製造方法
US20100213458A1 (en) 2009-02-23 2010-08-26 Micron Technology, Inc. Rigid semiconductor memory having amorphous metal oxide semiconductor channels
JP2012069583A (ja) 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
JP2014239202A (ja) 2013-06-06 2014-12-18 マクロニクス インターナショナル カンパニー リミテッド デュアルモードトランジスタデバイス及びその動作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3638880B2 (ja) * 2001-04-04 2005-04-13 株式会社ヤマシン工業所 コンクリートブロック
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102754022B (zh) 2010-02-26 2016-11-09 株式会社半导体能源研究所 液晶显示装置
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
CN103022012B (zh) 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
JP2017010951A (ja) 2014-01-10 2017-01-12 株式会社東芝 半導体記憶装置及びその製造方法
WO2015105049A2 (en) 2014-01-10 2015-07-16 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing same
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP6968567B2 (ja) 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN110998585B (zh) 2017-06-22 2024-07-16 株式会社半导体能源研究所 布局设计系统及布局设计方法
US10475812B2 (en) * 2018-02-02 2019-11-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin-film transistor strings
US10978563B2 (en) 2018-12-21 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20200365612A1 (en) * 2019-05-16 2020-11-19 Macronix International Co., Ltd. Three dimensional memory device and method for fabricating the same
JP7618404B2 (ja) 2019-07-12 2025-01-21 株式会社半導体エネルギー研究所 記憶装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294660A (ja) 1999-04-06 2000-10-20 Sony Corp 不揮発性半導体記憶装置およびその駆動方法
JP2003188287A (ja) 2001-12-18 2003-07-04 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2009032804A (ja) 2007-07-25 2009-02-12 Spansion Llc 半導体装置及びその製造方法
US20100213458A1 (en) 2009-02-23 2010-08-26 Micron Technology, Inc. Rigid semiconductor memory having amorphous metal oxide semiconductor channels
JP2012069583A (ja) 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
JP2014239202A (ja) 2013-06-06 2014-12-18 マクロニクス インターナショナル カンパニー リミテッド デュアルモードトランジスタデバイス及びその動作方法

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US12219771B2 (en) 2025-02-04
JPWO2021005432A1 (https=) 2021-01-14
CN114127957A (zh) 2022-03-01
KR20220027850A (ko) 2022-03-08
TW202118009A (zh) 2021-05-01
US20220320117A1 (en) 2022-10-06
TWI859261B (zh) 2024-10-21
WO2021005432A1 (ja) 2021-01-14

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