JPWO2023126741A5 - - Google Patents
Info
- Publication number
- JPWO2023126741A5 JPWO2023126741A5 JP2023570483A JP2023570483A JPWO2023126741A5 JP WO2023126741 A5 JPWO2023126741 A5 JP WO2023126741A5 JP 2023570483 A JP2023570483 A JP 2023570483A JP 2023570483 A JP2023570483 A JP 2023570483A JP WO2023126741 A5 JPWO2023126741 A5 JP WO2023126741A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- conductor
- opening
- oxide
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021215429 | 2021-12-29 | ||
| JP2021215431 | 2021-12-29 | ||
| PCT/IB2022/062263 WO2023126741A1 (ja) | 2021-12-29 | 2022-12-15 | 半導体装置、記憶装置、及び半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023126741A1 JPWO2023126741A1 (https=) | 2023-07-06 |
| JPWO2023126741A5 true JPWO2023126741A5 (https=) | 2025-11-12 |
Family
ID=86998283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023570483A Pending JPWO2023126741A1 (https=) | 2021-12-29 | 2022-12-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250056786A1 (https=) |
| JP (1) | JPWO2023126741A1 (https=) |
| KR (1) | KR20240129192A (https=) |
| TW (1) | TW202335184A (https=) |
| WO (1) | WO2023126741A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250098187A1 (en) * | 2023-09-18 | 2025-03-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor memory cell structure including a hydrogen absorption layer |
| WO2025078928A1 (ja) * | 2023-10-13 | 2025-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| JP6607681B2 (ja) * | 2014-03-07 | 2019-11-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2019047020A (ja) * | 2017-09-05 | 2019-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| CN117912516A (zh) * | 2017-09-06 | 2024-04-19 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2019197946A1 (ja) * | 2018-04-12 | 2019-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11997846B2 (en) * | 2018-07-06 | 2024-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
-
2022
- 2022-12-15 KR KR1020247025040A patent/KR20240129192A/ko active Pending
- 2022-12-15 JP JP2023570483A patent/JPWO2023126741A1/ja active Pending
- 2022-12-15 WO PCT/IB2022/062263 patent/WO2023126741A1/ja not_active Ceased
- 2022-12-15 US US18/723,731 patent/US20250056786A1/en active Pending
- 2022-12-23 TW TW111149806A patent/TW202335184A/zh unknown
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