JPWO2020049420A5 - - Google Patents
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- Publication number
- JPWO2020049420A5 JPWO2020049420A5 JP2020540872A JP2020540872A JPWO2020049420A5 JP WO2020049420 A5 JPWO2020049420 A5 JP WO2020049420A5 JP 2020540872 A JP2020540872 A JP 2020540872A JP 2020540872 A JP2020540872 A JP 2020540872A JP WO2020049420 A5 JPWO2020049420 A5 JP WO2020049420A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- oxide
- semiconductor device
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims 21
- 239000004065 semiconductor Substances 0.000 claims 8
- 239000012212 insulator Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023086171A JP2023101620A (ja) | 2018-09-07 | 2023-05-25 | 半導体装置 |
| JP2025009566A JP2025061743A (ja) | 2018-09-07 | 2025-01-23 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018167632 | 2018-09-07 | ||
| JP2018167632 | 2018-09-07 | ||
| PCT/IB2019/057266 WO2020049420A1 (ja) | 2018-09-07 | 2019-08-29 | 半導体装置、および半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023086171A Division JP2023101620A (ja) | 2018-09-07 | 2023-05-25 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020049420A1 JPWO2020049420A1 (ja) | 2021-08-26 |
| JPWO2020049420A5 true JPWO2020049420A5 (https=) | 2022-08-10 |
| JP7287970B2 JP7287970B2 (ja) | 2023-06-06 |
Family
ID=69723016
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020540872A Active JP7287970B2 (ja) | 2018-09-07 | 2019-08-29 | 半導体装置、および半導体装置の作製方法 |
| JP2023086171A Withdrawn JP2023101620A (ja) | 2018-09-07 | 2023-05-25 | 半導体装置 |
| JP2025009566A Pending JP2025061743A (ja) | 2018-09-07 | 2025-01-23 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023086171A Withdrawn JP2023101620A (ja) | 2018-09-07 | 2023-05-25 | 半導体装置 |
| JP2025009566A Pending JP2025061743A (ja) | 2018-09-07 | 2025-01-23 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US12062723B2 (https=) |
| JP (3) | JP7287970B2 (https=) |
| KR (2) | KR102830796B1 (https=) |
| WO (1) | WO2020049420A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12062723B2 (en) * | 2018-09-07 | 2024-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US12317541B2 (en) * | 2021-11-04 | 2025-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
| CN114339313B (zh) * | 2021-12-28 | 2024-09-13 | 维沃移动通信有限公司 | 插帧方法、装置及电子设备 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101472771B1 (ko) | 2008-12-01 | 2014-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011043194A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101943109B1 (ko) * | 2009-12-04 | 2019-01-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| JP2012079399A (ja) * | 2010-09-10 | 2012-04-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| CN103339715B (zh) * | 2010-12-03 | 2016-01-13 | 株式会社半导体能源研究所 | 氧化物半导体膜以及半导体装置 |
| US9431545B2 (en) | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5912394B2 (ja) | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102097171B1 (ko) | 2012-01-20 | 2020-04-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8981372B2 (en) * | 2012-09-13 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
| TWI632688B (zh) * | 2013-07-25 | 2018-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
| US9443987B2 (en) * | 2013-08-23 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9590109B2 (en) * | 2013-08-30 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9455349B2 (en) | 2013-10-22 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor with reduced impurity diffusion |
| CN106663391B (zh) * | 2013-12-02 | 2019-09-03 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| TWI721409B (zh) * | 2013-12-19 | 2021-03-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| CN104157695B (zh) | 2014-07-14 | 2017-02-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
| JP6444745B2 (ja) * | 2015-01-22 | 2018-12-26 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
| US9991394B2 (en) * | 2015-02-20 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| US9653613B2 (en) * | 2015-02-27 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9905657B2 (en) | 2016-01-20 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN106098784A (zh) * | 2016-06-13 | 2016-11-09 | 武汉华星光电技术有限公司 | 共平面型双栅电极氧化物薄膜晶体管及其制备方法 |
| KR20180048327A (ko) | 2016-11-01 | 2018-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
| JP2018133404A (ja) * | 2017-02-14 | 2018-08-23 | 株式会社ジャパンディスプレイ | 半導体装置 |
| WO2018215878A1 (ja) * | 2017-05-26 | 2018-11-29 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US12062723B2 (en) * | 2018-09-07 | 2024-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
-
2019
- 2019-08-29 US US17/272,400 patent/US12062723B2/en active Active
- 2019-08-29 KR KR1020217006924A patent/KR102830796B1/ko active Active
- 2019-08-29 WO PCT/IB2019/057266 patent/WO2020049420A1/ja not_active Ceased
- 2019-08-29 KR KR1020257022169A patent/KR20250109789A/ko active Pending
- 2019-08-29 JP JP2020540872A patent/JP7287970B2/ja active Active
-
2023
- 2023-05-25 JP JP2023086171A patent/JP2023101620A/ja not_active Withdrawn
-
2024
- 2024-08-06 US US18/795,876 patent/US20240395943A1/en active Pending
-
2025
- 2025-01-23 JP JP2025009566A patent/JP2025061743A/ja active Pending
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