JP2024512626A5 - - Google Patents

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Publication number
JP2024512626A5
JP2024512626A5 JP2023559708A JP2023559708A JP2024512626A5 JP 2024512626 A5 JP2024512626 A5 JP 2024512626A5 JP 2023559708 A JP2023559708 A JP 2023559708A JP 2023559708 A JP2023559708 A JP 2023559708A JP 2024512626 A5 JP2024512626 A5 JP 2024512626A5
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JP
Japan
Prior art keywords
gan
layer
electrical contacts
regrowthed
substrate
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JP2023559708A
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English (en)
Japanese (ja)
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JP7720921B2 (ja
JP2024512626A (ja
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Priority claimed from US17/220,660 external-priority patent/US11581448B2/en
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Publication of JP2024512626A5 publication Critical patent/JP2024512626A5/ja
Application granted granted Critical
Publication of JP7720921B2 publication Critical patent/JP7720921B2/ja
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JP2023559708A 2021-04-01 2022-03-30 ＧａＮ－ｏｎ－Ｓｉ電界効果トランジスタと横方向に並んで製造された光導電性半導体スイッチ Active JP7720921B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/220,660 US11581448B2 (en) 2021-04-01 2021-04-01 Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors
US17/220,660 2021-04-01
PCT/US2022/022523 WO2022212487A1 (en) 2021-04-01 2022-03-30 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS

Publications (3)

Publication Number Publication Date
JP2024512626A JP2024512626A (ja) 2024-03-19
JP2024512626A5 true JP2024512626A5 (https=) 2025-02-04
JP7720921B2 JP7720921B2 (ja) 2025-08-08

Family

ID=81585300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023559708A Active JP7720921B2 (ja) 2021-04-01 2022-03-30 ＧａＮ－ｏｎ－Ｓｉ電界効果トランジスタと横方向に並んで製造された光導電性半導体スイッチ

Country Status (7)

Country Link
US (1) US11581448B2 (https=)
EP (1) EP4315432A1 (https=)
JP (1) JP7720921B2 (https=)
KR (1) KR102801767B1 (https=)
IL (1) IL307235B2 (https=)
TW (1) TWI847115B (https=)
WO (1) WO2022212487A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12132130B2 (en) * 2021-02-22 2024-10-29 United States Of America As Represented By The Secretary Of The Air Force Stacked thin-film photoconductive semiconductor switch
CN114826233B (zh) * 2022-06-30 2022-10-04 中国工程物理研究院流体物理研究所 光放大和电放大组合控制的高功率重频固态开关及方法
WO2024054970A1 (en) 2022-09-09 2024-03-14 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Low resistance light controlled semiconductor switch (lcss)
WO2024054966A1 (en) 2022-09-09 2024-03-14 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Light controlled switch module

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2595007B1 (fr) 1986-02-25 1988-05-13 Thomson Csf Tete de detection optique realisee en optique integree et procede de realisation
US5574464A (en) 1995-10-17 1996-11-12 Northrop Grumman Corporation High-speed switching device for monostatic impulse radar
US20030102473A1 (en) 2001-08-15 2003-06-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate
US20030042404A1 (en) 2001-09-05 2003-03-06 The Boeing Company III-Nitride laser activated semiconductor switch and associated methods of fabrication and operation
WO2003025263A1 (en) * 2001-09-13 2003-03-27 Japan Science And Technology Agency Nitride semiconductor substrate, its manufacturing method, and semiconductor optical device using the same
US7173295B1 (en) 2002-06-17 2007-02-06 Sandia Corporation Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
JP5376951B2 (ja) 2005-10-24 2013-12-25 ローレンス リヴァーモア ナショナル セキュリティ，エルエルシー 光学的に開始されるシリコンカーバイド高電圧スイッチ
US8258632B1 (en) 2005-10-24 2012-09-04 Lawrence Livermore National Security, Llc Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces
JP2008153330A (ja) 2006-12-15 2008-07-03 Oki Electric Ind Co Ltd 窒化物半導体高電子移動度トランジスタ
US7795642B2 (en) 2007-09-14 2010-09-14 Transphorm, Inc. III-nitride devices with recessed gates
JP2009231751A (ja) * 2008-03-25 2009-10-08 Furukawa Electric Co Ltd:The ＧａＮ系化合物半導体からなる双方向スイッチング素子
US8076699B2 (en) 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US8853745B2 (en) 2009-01-20 2014-10-07 Raytheon Company Silicon based opto-electric circuits
US7834456B2 (en) 2009-01-20 2010-11-16 Raytheon Company Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate
WO2010129804A1 (en) 2009-05-07 2010-11-11 Lawrence Livermore National Security, Llc Photoconductive switch package
US7994550B2 (en) 2009-05-22 2011-08-09 Raytheon Company Semiconductor structures having both elemental and compound semiconductor devices on a common substrate
WO2010140370A1 (ja) 2009-06-05 2010-12-09 住友化学株式会社 光デバイス、半導体基板、光デバイスの製造方法、および半導体基板の製造方法
US8212294B2 (en) 2010-01-28 2012-07-03 Raytheon Company Structure having silicon CMOS transistors with column III-V transistors on a common substrate
US8154432B2 (en) 2010-03-22 2012-04-10 Raytheon Company Digital to analog converter (DAC) having high dynamic range
US8466555B2 (en) 2011-06-03 2013-06-18 Raytheon Company Gold-free ohmic contacts
US9147701B2 (en) 2011-09-22 2015-09-29 Raytheon Company Monolithic InGaN solar cell power generation with integrated efficient switching DC-DC voltage convertor
US8575666B2 (en) 2011-09-30 2013-11-05 Raytheon Company Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductor
US9154045B2 (en) 2011-10-07 2015-10-06 Raytheon Company Distributed power conditioning with DC-DC converters implemented in heterogeneous integrated circuit
WO2013115841A1 (en) * 2012-01-30 2013-08-08 Jun Seung Ik Radiation detecting panel
EP2839257B1 (en) 2012-04-20 2018-08-08 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Opto-electronic device and pulse processing method
US8975664B2 (en) * 2012-06-27 2015-03-10 Triquint Semiconductor, Inc. Group III-nitride transistor using a regrown structure
US8665013B2 (en) 2012-07-25 2014-03-04 Raytheon Company Monolithic integrated circuit chip integrating multiple devices
US8823146B1 (en) 2013-02-19 2014-09-02 Raytheon Company Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
US9500773B2 (en) 2013-06-07 2016-11-22 Lawrence Livermore National Security, Llc High voltage photoconductive switch package
US9356045B2 (en) 2013-06-10 2016-05-31 Raytheon Company Semiconductor structure having column III-V isolation regions
US20150059640A1 (en) 2013-08-27 2015-03-05 Raytheon Company Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windows
US9761445B2 (en) 2013-12-13 2017-09-12 Raytheon Company Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (SICOI) wafers
US9331153B2 (en) 2013-12-13 2016-05-03 Raytheon Company Methods and structures for forming microstrip transmission lines on thin silicon on insulator (SOI) wafers
US9543462B2 (en) 2015-03-20 2017-01-10 Xi'an University Of Technology Insulated-gate photoconductive semiconductor switch
CN105826406B (zh) 2015-03-20 2017-12-01 西安理工大学 一种绝缘栅型光电导开关
US9478508B1 (en) 2015-06-08 2016-10-25 Raytheon Company Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmission
US9419125B1 (en) 2015-06-16 2016-08-16 Raytheon Company Doped barrier layers in epitaxial group III nitrides
JP6126181B2 (ja) 2015-09-01 2017-05-10 日本電信電話株式会社 光スイッチ
US10447261B1 (en) 2016-06-23 2019-10-15 Hrl Laboratories, Llc Dual gate III-switch for high voltage current relay
US10096550B2 (en) 2017-02-21 2018-10-09 Raytheon Company Nitride structure having gold-free contact and methods for forming such structures
US10224285B2 (en) 2017-02-21 2019-03-05 Raytheon Company Nitride structure having gold-free contact and methods for forming such structures
CN110832845B (zh) * 2017-07-14 2022-07-05 株式会社半导体能源研究所 摄像装置及电子设备
US10305250B2 (en) * 2017-08-23 2019-05-28 The Regents Of The University Of Michigan III-Nitride nanowire array monolithic photonic integrated circuit on (001)silicon operating at near-infrared wavelengths
US20190097001A1 (en) 2017-09-25 2019-03-28 Raytheon Company Electrode structure for field effect transistor
US10566428B2 (en) 2018-01-29 2020-02-18 Raytheon Company Method for forming gate structures for group III-V field effect transistors
US20190305157A1 (en) 2018-04-02 2019-10-03 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Photodetector
JP2020004921A (ja) 2018-07-02 2020-01-09 株式会社東芝 半導体装置
US11177216B2 (en) 2018-09-06 2021-11-16 Raytheon Company Nitride structures having low capacitance gate contacts integrated with copper damascene structures
FR3086100B1 (fr) * 2018-09-13 2022-08-12 Commissariat Energie Atomique Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes
US11081613B2 (en) * 2019-08-08 2021-08-03 Tower Semiconductor Ltd. Gallium nitride based ultra-violet sensor with intrinsic amplification and method of operating same

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