KR102801767B1 - GaN on Si 전계 효과 트랜지스터들과 함께 측면으로 제작된 광전도성 반도체 스위치 - Google Patents

GaN on Si 전계 효과 트랜지스터들과 함께 측면으로 제작된 광전도성 반도체 스위치 Download PDF

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KR102801767B1
KR102801767B1 KR1020237031630A KR20237031630A KR102801767B1 KR 102801767 B1 KR102801767 B1 KR 102801767B1 KR 1020237031630 A KR1020237031630 A KR 1020237031630A KR 20237031630 A KR20237031630 A KR 20237031630A KR 102801767 B1 KR102801767 B1 KR 102801767B1
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gallium nitride
electrical contact
integrated circuit
semiconductor switch
circuit structure
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KR20230144086A (ko
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매튜 티. 데자를드
제프리 알. 라로슈
클레이 티. 롱
러브레이스 제이. 소이레즈
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레이던 컴퍼니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1246—III-V nitrides, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers

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  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020237031630A 2021-04-01 2022-03-30 GaN on Si 전계 효과 트랜지스터들과 함께 측면으로 제작된 광전도성 반도체 스위치 Active KR102801767B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/220,660 2021-04-01
US17/220,660 US11581448B2 (en) 2021-04-01 2021-04-01 Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors
PCT/US2022/022523 WO2022212487A1 (en) 2021-04-01 2022-03-30 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS

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KR20230144086A KR20230144086A (ko) 2023-10-13
KR102801767B1 true KR102801767B1 (ko) 2025-04-30

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US (1) US11581448B2 (https=)
EP (1) EP4315432A1 (https=)
JP (1) JP7720921B2 (https=)
KR (1) KR102801767B1 (https=)
IL (1) IL307235B2 (https=)
TW (1) TWI847115B (https=)
WO (1) WO2022212487A1 (https=)

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US12132130B2 (en) * 2021-02-22 2024-10-29 United States Of America As Represented By The Secretary Of The Air Force Stacked thin-film photoconductive semiconductor switch
CN114826233B (zh) * 2022-06-30 2022-10-04 中国工程物理研究院流体物理研究所 光放大和电放大组合控制的高功率重频固态开关及方法
US11996840B1 (en) 2022-09-09 2024-05-28 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Light controlled switch module
WO2024054970A1 (en) 2022-09-09 2024-03-14 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Low resistance light controlled semiconductor switch (lcss)

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IL307235B2 (en) 2024-09-01
EP4315432A1 (en) 2024-02-07
JP2024512626A (ja) 2024-03-19
US20220320360A1 (en) 2022-10-06
IL307235A (en) 2023-11-01
US11581448B2 (en) 2023-02-14
KR20230144086A (ko) 2023-10-13
JP7720921B2 (ja) 2025-08-08
WO2022212487A1 (en) 2022-10-06
IL307235B1 (en) 2024-05-01
TW202243031A (zh) 2022-11-01
TWI847115B (zh) 2024-07-01

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