TWI847115B - 沿矽基氮化鎵場效電晶體橫向製造之光導半導體開關 - Google Patents
沿矽基氮化鎵場效電晶體橫向製造之光導半導體開關 Download PDFInfo
- Publication number
- TWI847115B TWI847115B TW111112779A TW111112779A TWI847115B TW I847115 B TWI847115 B TW I847115B TW 111112779 A TW111112779 A TW 111112779A TW 111112779 A TW111112779 A TW 111112779A TW I847115 B TWI847115 B TW I847115B
- Authority
- TW
- Taiwan
- Prior art keywords
- gallium nitride
- integrated circuit
- circuit structure
- semiconductor switch
- electrical contact
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 230000005669 field effect Effects 0.000 title claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 89
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 230000008901 benefit Effects 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1246—III-V nitrides, e.g. GaN
Landscapes
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/220,660 | 2021-04-01 | ||
| US17/220,660 US11581448B2 (en) | 2021-04-01 | 2021-04-01 | Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202243031A TW202243031A (zh) | 2022-11-01 |
| TWI847115B true TWI847115B (zh) | 2024-07-01 |
Family
ID=81585300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111112779A TWI847115B (zh) | 2021-04-01 | 2022-04-01 | 沿矽基氮化鎵場效電晶體橫向製造之光導半導體開關 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11581448B2 (https=) |
| EP (1) | EP4315432A1 (https=) |
| JP (1) | JP7720921B2 (https=) |
| KR (1) | KR102801767B1 (https=) |
| IL (1) | IL307235B2 (https=) |
| TW (1) | TWI847115B (https=) |
| WO (1) | WO2022212487A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12132130B2 (en) * | 2021-02-22 | 2024-10-29 | United States Of America As Represented By The Secretary Of The Air Force | Stacked thin-film photoconductive semiconductor switch |
| CN114826233B (zh) * | 2022-06-30 | 2022-10-04 | 中国工程物理研究院流体物理研究所 | 光放大和电放大组合控制的高功率重频固态开关及方法 |
| US11996840B1 (en) | 2022-09-09 | 2024-05-28 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Light controlled switch module |
| WO2024054970A1 (en) | 2022-09-09 | 2024-03-14 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Low resistance light controlled semiconductor switch (lcss) |
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| US20050037526A1 (en) * | 2001-09-13 | 2005-02-17 | Satoshi Kamiyama | Nitride semiconductor substrate production method thereof and semiconductor optical device using the same |
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| US20190067900A1 (en) * | 2017-08-23 | 2019-02-28 | The Regents Of The University Of Michigan | Iii-nitride nanowire array monolithic photonic integrated circuit on (001)silicon operating at near-infrared wavelengths |
| US20200091224A1 (en) * | 2018-09-13 | 2020-03-19 | Commissariat à l'énergie atomique et aux énergies alternatives | Method of manufacturing an optoelectronic device comprising a plurality of diodes |
| US20210043793A1 (en) * | 2019-08-08 | 2021-02-11 | Tower Semiconductor Ltd. | Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplification and Method of Operating Same |
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| US5574464A (en) | 1995-10-17 | 1996-11-12 | Northrop Grumman Corporation | High-speed switching device for monostatic impulse radar |
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| AU2006342150A1 (en) | 2005-10-24 | 2007-10-25 | Lawrence Livermore National Security, Llc. | Optically- initiated silicon carbide high voltage switch |
| US8258632B1 (en) | 2005-10-24 | 2012-09-04 | Lawrence Livermore National Security, Llc | Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces |
| JP2008153330A (ja) | 2006-12-15 | 2008-07-03 | Oki Electric Ind Co Ltd | 窒化物半導体高電子移動度トランジスタ |
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| JP2009231751A (ja) * | 2008-03-25 | 2009-10-08 | Furukawa Electric Co Ltd:The | ＧａＮ系化合物半導体からなる双方向スイッチング素子 |
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| WO2010129804A1 (en) | 2009-05-07 | 2010-11-11 | Lawrence Livermore National Security, Llc | Photoconductive switch package |
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-
2021
- 2021-04-01 US US17/220,660 patent/US11581448B2/en active Active
-
2022
- 2022-03-30 IL IL307235A patent/IL307235B2/en unknown
- 2022-03-30 WO PCT/US2022/022523 patent/WO2022212487A1/en not_active Ceased
- 2022-03-30 KR KR1020237031630A patent/KR102801767B1/ko active Active
- 2022-03-30 EP EP22721929.2A patent/EP4315432A1/en active Pending
- 2022-03-30 JP JP2023559708A patent/JP7720921B2/ja active Active
- 2022-04-01 TW TW111112779A patent/TWI847115B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050037526A1 (en) * | 2001-09-13 | 2005-02-17 | Satoshi Kamiyama | Nitride semiconductor substrate production method thereof and semiconductor optical device using the same |
| TW200636983A (en) * | 2005-04-11 | 2006-10-16 | Cree Inc | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
| US20190067900A1 (en) * | 2017-08-23 | 2019-02-28 | The Regents Of The University Of Michigan | Iii-nitride nanowire array monolithic photonic integrated circuit on (001)silicon operating at near-infrared wavelengths |
| US20200091224A1 (en) * | 2018-09-13 | 2020-03-19 | Commissariat à l'énergie atomique et aux énergies alternatives | Method of manufacturing an optoelectronic device comprising a plurality of diodes |
| US20210043793A1 (en) * | 2019-08-08 | 2021-02-11 | Tower Semiconductor Ltd. | Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplification and Method of Operating Same |
Also Published As
| Publication number | Publication date |
|---|---|
| IL307235B2 (en) | 2024-09-01 |
| EP4315432A1 (en) | 2024-02-07 |
| JP2024512626A (ja) | 2024-03-19 |
| US20220320360A1 (en) | 2022-10-06 |
| IL307235A (en) | 2023-11-01 |
| US11581448B2 (en) | 2023-02-14 |
| KR102801767B1 (ko) | 2025-04-30 |
| KR20230144086A (ko) | 2023-10-13 |
| JP7720921B2 (ja) | 2025-08-08 |
| WO2022212487A1 (en) | 2022-10-06 |
| IL307235B1 (en) | 2024-05-01 |
| TW202243031A (zh) | 2022-11-01 |
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