JP7720921B2 - ＧａＮ－ｏｎ－Ｓｉ電界効果トランジスタと横方向に並んで製造された光導電性半導体スイッチ - Google Patents

ＧａＮ－ｏｎ－Ｓｉ電界効果トランジスタと横方向に並んで製造された光導電性半導体スイッチ

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Publication number
JP7720921B2
JP7720921B2 JP2023559708A JP2023559708A JP7720921B2 JP 7720921 B2 JP7720921 B2 JP 7720921B2 JP 2023559708 A JP2023559708 A JP 2023559708A JP 2023559708 A JP2023559708 A JP 2023559708A JP 7720921 B2 JP7720921 B2 JP 7720921B2
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Prior art keywords
gallium nitride
integrated circuit
circuit structure
nitride layer
semiconductor switch
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Active
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JP2023559708A
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English (en)
Japanese (ja)
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JPWO2022212487A5 (https=
JP2024512626A (ja
JP2024512626A5 (https=
Inventor
デジャール，マシュー，ティー．
ラロッシュ，ジェフリー，アール．
ロング，クレイ，ティー．
ソワレ，ラヴレース，ジェイ．
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Raytheon Co
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Raytheon Co
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Publication of JP2024512626A publication Critical patent/JP2024512626A/ja
Publication of JPWO2022212487A5 publication Critical patent/JPWO2022212487A5/ja
Publication of JP2024512626A5 publication Critical patent/JP2024512626A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1246—III-V nitrides, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023559708A 2021-04-01 2022-03-30 ＧａＮ－ｏｎ－Ｓｉ電界効果トランジスタと横方向に並んで製造された光導電性半導体スイッチ Active JP7720921B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/220,660 2021-04-01
US17/220,660 US11581448B2 (en) 2021-04-01 2021-04-01 Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors
PCT/US2022/022523 WO2022212487A1 (en) 2021-04-01 2022-03-30 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS

Publications (4)

Publication Number Publication Date
JP2024512626A JP2024512626A (ja) 2024-03-19
JPWO2022212487A5 JPWO2022212487A5 (https=) 2025-02-04
JP2024512626A5 JP2024512626A5 (https=) 2025-02-04
JP7720921B2 true JP7720921B2 (ja) 2025-08-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023559708A Active JP7720921B2 (ja) 2021-04-01 2022-03-30 ＧａＮ－ｏｎ－Ｓｉ電界効果トランジスタと横方向に並んで製造された光導電性半導体スイッチ

Country Status (7)

Country Link
US (1) US11581448B2 (https=)
EP (1) EP4315432A1 (https=)
JP (1) JP7720921B2 (https=)
KR (1) KR102801767B1 (https=)
IL (1) IL307235B2 (https=)
TW (1) TWI847115B (https=)
WO (1) WO2022212487A1 (https=)

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* Cited by examiner, † Cited by third party
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US12132130B2 (en) * 2021-02-22 2024-10-29 United States Of America As Represented By The Secretary Of The Air Force Stacked thin-film photoconductive semiconductor switch
CN114826233B (zh) * 2022-06-30 2022-10-04 中国工程物理研究院流体物理研究所 光放大和电放大组合控制的高功率重频固态开关及方法
US11996840B1 (en) 2022-09-09 2024-05-28 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Light controlled switch module
WO2024054970A1 (en) 2022-09-09 2024-03-14 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Low resistance light controlled semiconductor switch (lcss)

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US20210043793A1 (en) 2019-08-08 2021-02-11 Tower Semiconductor Ltd. Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplification and Method of Operating Same

Also Published As

Publication number Publication date
IL307235B2 (en) 2024-09-01
EP4315432A1 (en) 2024-02-07
JP2024512626A (ja) 2024-03-19
US20220320360A1 (en) 2022-10-06
IL307235A (en) 2023-11-01
US11581448B2 (en) 2023-02-14
KR102801767B1 (ko) 2025-04-30
KR20230144086A (ko) 2023-10-13
WO2022212487A1 (en) 2022-10-06
IL307235B1 (en) 2024-05-01
TW202243031A (zh) 2022-11-01
TWI847115B (zh) 2024-07-01

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