IL307235B2 - PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS - Google Patents

PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS

Info

Publication number
IL307235B2
IL307235B2 IL307235A IL30723523A IL307235B2 IL 307235 B2 IL307235 B2 IL 307235B2 IL 307235 A IL307235 A IL 307235A IL 30723523 A IL30723523 A IL 30723523A IL 307235 B2 IL307235 B2 IL 307235B2
Authority
IL
Israel
Prior art keywords
gallium nitride
integrated circuit
electrical contact
circuit structure
semiconductor switch
Prior art date
Application number
IL307235A
Other languages
English (en)
Hebrew (he)
Other versions
IL307235A (en
IL307235B1 (en
Inventor
Matthew T Dejarld
Jeffrey R Laroche
Clay T Long
Lovelace J Soirez
Original Assignee
Raytheon Co
Matthew T Dejarld
Jeffrey R Laroche
Clay T Long
Lovelace J Soirez
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co, Matthew T Dejarld, Jeffrey R Laroche, Clay T Long, Lovelace J Soirez filed Critical Raytheon Co
Publication of IL307235A publication Critical patent/IL307235A/en
Publication of IL307235B1 publication Critical patent/IL307235B1/en
Publication of IL307235B2 publication Critical patent/IL307235B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1246—III-V nitrides, e.g. GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IL307235A 2021-04-01 2022-03-30 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS IL307235B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/220,660 US11581448B2 (en) 2021-04-01 2021-04-01 Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors
PCT/US2022/022523 WO2022212487A1 (en) 2021-04-01 2022-03-30 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS

Publications (3)

Publication Number Publication Date
IL307235A IL307235A (en) 2023-11-01
IL307235B1 IL307235B1 (en) 2024-05-01
IL307235B2 true IL307235B2 (en) 2024-09-01

Family

ID=81585300

Family Applications (1)

Application Number Title Priority Date Filing Date
IL307235A IL307235B2 (en) 2021-04-01 2022-03-30 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS

Country Status (7)

Country Link
US (1) US11581448B2 (https=)
EP (1) EP4315432A1 (https=)
JP (1) JP7720921B2 (https=)
KR (1) KR102801767B1 (https=)
IL (1) IL307235B2 (https=)
TW (1) TWI847115B (https=)
WO (1) WO2022212487A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12132130B2 (en) * 2021-02-22 2024-10-29 United States Of America As Represented By The Secretary Of The Air Force Stacked thin-film photoconductive semiconductor switch
CN114826233B (zh) * 2022-06-30 2022-10-04 中国工程物理研究院流体物理研究所 光放大和电放大组合控制的高功率重频固态开关及方法
US11996840B1 (en) 2022-09-09 2024-05-28 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Light controlled switch module
WO2024054970A1 (en) 2022-09-09 2024-03-14 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Low resistance light controlled semiconductor switch (lcss)

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2595007B1 (fr) 1986-02-25 1988-05-13 Thomson Csf Tete de detection optique realisee en optique integree et procede de realisation
US5574464A (en) 1995-10-17 1996-11-12 Northrop Grumman Corporation High-speed switching device for monostatic impulse radar
US20030102473A1 (en) 2001-08-15 2003-06-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate
US20030042404A1 (en) 2001-09-05 2003-03-06 The Boeing Company III-Nitride laser activated semiconductor switch and associated methods of fabrication and operation
JP4173445B2 (ja) * 2001-09-13 2008-10-29 学校法人 名城大学 窒化物半導体基板、その製造方法、およびそれを用いた半導体発光素子
US7173295B1 (en) 2002-06-17 2007-02-06 Sandia Corporation Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
AU2006342150A1 (en) 2005-10-24 2007-10-25 Lawrence Livermore National Security, Llc. Optically- initiated silicon carbide high voltage switch
US8258632B1 (en) 2005-10-24 2012-09-04 Lawrence Livermore National Security, Llc Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces
JP2008153330A (ja) 2006-12-15 2008-07-03 Oki Electric Ind Co Ltd 窒化物半導体高電子移動度トランジスタ
US7795642B2 (en) 2007-09-14 2010-09-14 Transphorm, Inc. III-nitride devices with recessed gates
JP2009231751A (ja) * 2008-03-25 2009-10-08 Furukawa Electric Co Ltd:The ＧａＮ系化合物半導体からなる双方向スイッチング素子
US8076699B2 (en) 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US7834456B2 (en) 2009-01-20 2010-11-16 Raytheon Company Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate
US8853745B2 (en) 2009-01-20 2014-10-07 Raytheon Company Silicon based opto-electric circuits
WO2010129804A1 (en) 2009-05-07 2010-11-11 Lawrence Livermore National Security, Llc Photoconductive switch package
US7994550B2 (en) 2009-05-22 2011-08-09 Raytheon Company Semiconductor structures having both elemental and compound semiconductor devices on a common substrate
KR20120035144A (ko) * 2009-06-05 2012-04-13 스미또모 가가꾸 가부시키가이샤 광 디바이스, 반도체 기판, 광 디바이스의 제조 방법 및 반도체 기판의 제조 방법
US8212294B2 (en) 2010-01-28 2012-07-03 Raytheon Company Structure having silicon CMOS transistors with column III-V transistors on a common substrate
US8154432B2 (en) 2010-03-22 2012-04-10 Raytheon Company Digital to analog converter (DAC) having high dynamic range
US8466555B2 (en) 2011-06-03 2013-06-18 Raytheon Company Gold-free ohmic contacts
US9147701B2 (en) 2011-09-22 2015-09-29 Raytheon Company Monolithic InGaN solar cell power generation with integrated efficient switching DC-DC voltage convertor
US8575666B2 (en) 2011-09-30 2013-11-05 Raytheon Company Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductor
US9154045B2 (en) 2011-10-07 2015-10-06 Raytheon Company Distributed power conditioning with DC-DC converters implemented in heterogeneous integrated circuit
KR101415226B1 (ko) * 2012-01-30 2014-07-04 전승익 방사선 검출 패널
WO2013156045A1 (en) 2012-04-20 2013-10-24 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Opto-electronic device and pulse processing method
US8975664B2 (en) * 2012-06-27 2015-03-10 Triquint Semiconductor, Inc. Group III-nitride transistor using a regrown structure
US8665013B2 (en) 2012-07-25 2014-03-04 Raytheon Company Monolithic integrated circuit chip integrating multiple devices
US8823146B1 (en) 2013-02-19 2014-09-02 Raytheon Company Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
US9500773B2 (en) 2013-06-07 2016-11-22 Lawrence Livermore National Security, Llc High voltage photoconductive switch package
US9356045B2 (en) 2013-06-10 2016-05-31 Raytheon Company Semiconductor structure having column III-V isolation regions
US20150059640A1 (en) 2013-08-27 2015-03-05 Raytheon Company Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windows
US9761445B2 (en) 2013-12-13 2017-09-12 Raytheon Company Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (SICOI) wafers
US9331153B2 (en) 2013-12-13 2016-05-03 Raytheon Company Methods and structures for forming microstrip transmission lines on thin silicon on insulator (SOI) wafers
US9543462B2 (en) 2015-03-20 2017-01-10 Xi'an University Of Technology Insulated-gate photoconductive semiconductor switch
CN105826406B (zh) 2015-03-20 2017-12-01 西安理工大学 一种绝缘栅型光电导开关
US9478508B1 (en) 2015-06-08 2016-10-25 Raytheon Company Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmission
US9419125B1 (en) 2015-06-16 2016-08-16 Raytheon Company Doped barrier layers in epitaxial group III nitrides
JP6126181B2 (ja) * 2015-09-01 2017-05-10 日本電信電話株式会社 光スイッチ
US10447261B1 (en) 2016-06-23 2019-10-15 Hrl Laboratories, Llc Dual gate III-switch for high voltage current relay
US10096550B2 (en) 2017-02-21 2018-10-09 Raytheon Company Nitride structure having gold-free contact and methods for forming such structures
US10224285B2 (en) 2017-02-21 2019-03-05 Raytheon Company Nitride structure having gold-free contact and methods for forming such structures
JP7144413B2 (ja) * 2017-07-14 2022-09-29 株式会社半導体エネルギー研究所 撮像装置
US10305250B2 (en) * 2017-08-23 2019-05-28 The Regents Of The University Of Michigan III-Nitride nanowire array monolithic photonic integrated circuit on (001)silicon operating at near-infrared wavelengths
US20190097001A1 (en) 2017-09-25 2019-03-28 Raytheon Company Electrode structure for field effect transistor
US10566428B2 (en) 2018-01-29 2020-02-18 Raytheon Company Method for forming gate structures for group III-V field effect transistors
US20190305157A1 (en) 2018-04-02 2019-10-03 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Photodetector
JP2020004921A (ja) * 2018-07-02 2020-01-09 株式会社東芝 半導体装置
US11177216B2 (en) 2018-09-06 2021-11-16 Raytheon Company Nitride structures having low capacitance gate contacts integrated with copper damascene structures
FR3086100B1 (fr) * 2018-09-13 2022-08-12 Commissariat Energie Atomique Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes
US11081613B2 (en) * 2019-08-08 2021-08-03 Tower Semiconductor Ltd. Gallium nitride based ultra-violet sensor with intrinsic amplification and method of operating same

Also Published As

Publication number Publication date
EP4315432A1 (en) 2024-02-07
JP2024512626A (ja) 2024-03-19
US20220320360A1 (en) 2022-10-06
IL307235A (en) 2023-11-01
US11581448B2 (en) 2023-02-14
KR102801767B1 (ko) 2025-04-30
KR20230144086A (ko) 2023-10-13
JP7720921B2 (ja) 2025-08-08
WO2022212487A1 (en) 2022-10-06
IL307235B1 (en) 2024-05-01
TW202243031A (zh) 2022-11-01
TWI847115B (zh) 2024-07-01

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