KR102830796B1 - 반도체 장치 및 반도체 장치의 제작 방법 - Google Patents

반도체 장치 및 반도체 장치의 제작 방법 Download PDF

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KR102830796B1
KR102830796B1 KR1020217006924A KR20217006924A KR102830796B1 KR 102830796 B1 KR102830796 B1 KR 102830796B1 KR 1020217006924 A KR1020217006924 A KR 1020217006924A KR 20217006924 A KR20217006924 A KR 20217006924A KR 102830796 B1 KR102830796 B1 KR 102830796B1
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South Korea
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oxide
conductor
insulator
addition
transistor
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KR20210052462A (ko
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마사히로 타카하시
나오키 오쿠노
토모사토 카나가와
쇼타 미즈카미
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020217006924A 2018-09-07 2019-08-29 반도체 장치 및 반도체 장치의 제작 방법 Active KR102830796B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257022169A KR20250109789A (ko) 2018-09-07 2019-08-29 반도체 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018167632 2018-09-07
JPJP-P-2018-167632 2018-09-07
PCT/IB2019/057266 WO2020049420A1 (ja) 2018-09-07 2019-08-29 半導体装置、および半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257022169A Division KR20250109789A (ko) 2018-09-07 2019-08-29 반도체 장치

Publications (2)

Publication Number Publication Date
KR20210052462A KR20210052462A (ko) 2021-05-10
KR102830796B1 true KR102830796B1 (ko) 2025-07-07

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KR1020217006924A Active KR102830796B1 (ko) 2018-09-07 2019-08-29 반도체 장치 및 반도체 장치의 제작 방법
KR1020257022169A Pending KR20250109789A (ko) 2018-09-07 2019-08-29 반도체 장치

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US (2) US12062723B2 (https=)
JP (3) JP7287970B2 (https=)
KR (2) KR102830796B1 (https=)
WO (1) WO2020049420A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12062723B2 (en) * 2018-09-07 2024-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US12317541B2 (en) * 2021-11-04 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
CN114339313B (zh) * 2021-12-28 2024-09-13 维沃移动通信有限公司 插帧方法、装置及电子设备

Citations (3)

* Cited by examiner, † Cited by third party
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US20160247928A1 (en) 2015-02-20 2016-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US20180212062A1 (en) 2016-06-13 2018-07-26 Wuhan China Star Optoelectronics Technology Co., Ltd. Coplanar double gate electrode oxide thin film transistor and manufacture method thereof
JP2018133404A (ja) * 2017-02-14 2018-08-23 株式会社ジャパンディスプレイ 半導体装置

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KR101472771B1 (ko) 2008-12-01 2014-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011043194A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101943109B1 (ko) * 2009-12-04 2019-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
JP2012079399A (ja) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
CN103339715B (zh) * 2010-12-03 2016-01-13 株式会社半导体能源研究所 氧化物半导体膜以及半导体装置
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
KR102097171B1 (ko) 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8981372B2 (en) * 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
TWI632688B (zh) * 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
US9443987B2 (en) * 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9590109B2 (en) * 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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CN106663391B (zh) * 2013-12-02 2019-09-03 株式会社半导体能源研究所 显示装置及其制造方法
TWI721409B (zh) * 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
CN104157695B (zh) 2014-07-14 2017-02-15 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
JP6444745B2 (ja) * 2015-01-22 2018-12-26 東芝メモリ株式会社 半導体装置及びその製造方法
US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9905657B2 (en) 2016-01-20 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20180048327A (ko) 2016-11-01 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
WO2018215878A1 (ja) * 2017-05-26 2018-11-29 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US12062723B2 (en) * 2018-09-07 2024-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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US20160247928A1 (en) 2015-02-20 2016-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US20180212062A1 (en) 2016-06-13 2018-07-26 Wuhan China Star Optoelectronics Technology Co., Ltd. Coplanar double gate electrode oxide thin film transistor and manufacture method thereof
JP2018133404A (ja) * 2017-02-14 2018-08-23 株式会社ジャパンディスプレイ 半導体装置

Also Published As

Publication number Publication date
KR20250109789A (ko) 2025-07-17
US12062723B2 (en) 2024-08-13
US20210320209A1 (en) 2021-10-14
US20240395943A1 (en) 2024-11-28
JP2023101620A (ja) 2023-07-21
JP2025061743A (ja) 2025-04-11
KR20210052462A (ko) 2021-05-10
WO2020049420A1 (ja) 2020-03-12
JPWO2020049420A1 (ja) 2021-08-26
JP7287970B2 (ja) 2023-06-06

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