JPWO2020201873A1 - - Google Patents
Info
- Publication number
- JPWO2020201873A1 JPWO2020201873A1 JP2021510575A JP2021510575A JPWO2020201873A1 JP WO2020201873 A1 JPWO2020201873 A1 JP WO2020201873A1 JP 2021510575 A JP2021510575 A JP 2021510575A JP 2021510575 A JP2021510575 A JP 2021510575A JP WO2020201873 A1 JPWO2020201873 A1 JP WO2020201873A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019066884 | 2019-03-29 | ||
| JP2019066884 | 2019-03-29 | ||
| PCT/IB2020/052490 WO2020201873A1 (ja) | 2019-03-29 | 2020-03-19 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020201873A1 true JPWO2020201873A1 (https=) | 2020-10-08 |
| JPWO2020201873A5 JPWO2020201873A5 (https=) | 2023-03-28 |
| JP7555906B2 JP7555906B2 (ja) | 2024-09-25 |
Family
ID=72666573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021510575A Active JP7555906B2 (ja) | 2019-03-29 | 2020-03-19 | 半導体装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12082390B2 (https=) |
| JP (1) | JP7555906B2 (https=) |
| WO (1) | WO2020201873A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7805298B2 (ja) | 2020-08-21 | 2026-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US12538495B2 (en) | 2020-09-06 | 2026-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, capacitor, and manufacturing method thereof |
| CN116114019A (zh) | 2020-09-22 | 2023-05-12 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| TW202213766A (zh) * | 2020-09-22 | 2022-04-01 | 日商半導體能源研究所股份有限公司 | 鐵電體器件及半導體裝置 |
| WO2022106956A1 (ja) | 2020-11-20 | 2022-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP4730956A1 (en) * | 2024-10-16 | 2026-04-22 | LG Display Co., Ltd. | Thin film transistor, method for manufacturing the same, thin film transistor substrate, and display apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012084857A (ja) * | 2010-09-14 | 2012-04-26 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ |
| JP2018107447A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP2018121049A (ja) * | 2016-12-23 | 2018-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| WO2018178793A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| JP2019024128A (ja) * | 2013-05-20 | 2019-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2020
- 2020-03-19 US US17/439,500 patent/US12082390B2/en active Active
- 2020-03-19 JP JP2021510575A patent/JP7555906B2/ja active Active
- 2020-03-19 WO PCT/IB2020/052490 patent/WO2020201873A1/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012084857A (ja) * | 2010-09-14 | 2012-04-26 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ |
| JP2019024128A (ja) * | 2013-05-20 | 2019-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018121049A (ja) * | 2016-12-23 | 2018-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| JP2018107447A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| WO2018178793A1 (ja) * | 2017-03-29 | 2018-10-04 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12082390B2 (en) | 2024-09-03 |
| US20220157817A1 (en) | 2022-05-19 |
| JP7555906B2 (ja) | 2024-09-25 |
| WO2020201873A1 (ja) | 2020-10-08 |
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