JP7555906B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP7555906B2
JP7555906B2 JP2021510575A JP2021510575A JP7555906B2 JP 7555906 B2 JP7555906 B2 JP 7555906B2 JP 2021510575 A JP2021510575 A JP 2021510575A JP 2021510575 A JP2021510575 A JP 2021510575A JP 7555906 B2 JP7555906 B2 JP 7555906B2
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Prior art keywords
oxide
insulator
conductor
film
transistor
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Japanese (ja)
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JPWO2020201873A1 (https=
JPWO2020201873A5 (https=
Inventor
舜平 山崎
慎也 笹川
俊一 伊藤
絵里香 高橋
哲弥 掛端
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2021510575A 2019-03-29 2020-03-19 半導体装置の作製方法 Active JP7555906B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019066884 2019-03-29
JP2019066884 2019-03-29
PCT/IB2020/052490 WO2020201873A1 (ja) 2019-03-29 2020-03-19 半導体装置の作製方法

Publications (3)

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JPWO2020201873A1 JPWO2020201873A1 (https=) 2020-10-08
JPWO2020201873A5 JPWO2020201873A5 (https=) 2023-03-28
JP7555906B2 true JP7555906B2 (ja) 2024-09-25

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JP2021510575A Active JP7555906B2 (ja) 2019-03-29 2020-03-19 半導体装置の作製方法

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US (1) US12082390B2 (https=)
JP (1) JP7555906B2 (https=)
WO (1) WO2020201873A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7805298B2 (ja) 2020-08-21 2026-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US12538495B2 (en) 2020-09-06 2026-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, capacitor, and manufacturing method thereof
CN116114019A (zh) 2020-09-22 2023-05-12 株式会社半导体能源研究所 半导体装置及电子设备
TW202213766A (zh) * 2020-09-22 2022-04-01 日商半導體能源研究所股份有限公司 鐵電體器件及半導體裝置
WO2022106956A1 (ja) 2020-11-20 2022-05-27 株式会社半導体エネルギー研究所 半導体装置
EP4730956A1 (en) * 2024-10-16 2026-04-22 LG Display Co., Ltd. Thin film transistor, method for manufacturing the same, thin film transistor substrate, and display apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084857A (ja) 2010-09-14 2012-04-26 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
JP2018107447A (ja) 2016-12-27 2018-07-05 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP2018121049A (ja) 2016-12-23 2018-08-02 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2018178793A1 (ja) 2017-03-29 2018-10-04 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
JP2019024128A (ja) 2013-05-20 2019-02-14 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084857A (ja) 2010-09-14 2012-04-26 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
JP2019024128A (ja) 2013-05-20 2019-02-14 株式会社半導体エネルギー研究所 半導体装置
JP2018121049A (ja) 2016-12-23 2018-08-02 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP2018107447A (ja) 2016-12-27 2018-07-05 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2018178793A1 (ja) 2017-03-29 2018-10-04 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法

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US12082390B2 (en) 2024-09-03
JPWO2020201873A1 (https=) 2020-10-08
US20220157817A1 (en) 2022-05-19
WO2020201873A1 (ja) 2020-10-08

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