JPWO2022043809A5 - - Google Patents

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Publication number
JPWO2022043809A5
JPWO2022043809A5 JP2022544874A JP2022544874A JPWO2022043809A5 JP WO2022043809 A5 JPWO2022043809 A5 JP WO2022043809A5 JP 2022544874 A JP2022544874 A JP 2022544874A JP 2022544874 A JP2022544874 A JP 2022544874A JP WO2022043809 A5 JPWO2022043809 A5 JP WO2022043809A5
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Japan
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insulator
oxide
manufacturing
semiconductor device
forming
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JP2022544874A
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English (en)
Japanese (ja)
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JP7796027B2 (ja
JPWO2022043809A1 (https=
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Priority claimed from PCT/IB2021/057426 external-priority patent/WO2022043809A1/ja
Publication of JPWO2022043809A1 publication Critical patent/JPWO2022043809A1/ja
Publication of JPWO2022043809A5 publication Critical patent/JPWO2022043809A5/ja
Priority to JP2025272639A priority Critical patent/JP2026040561A/ja
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JP2022544874A 2020-08-27 2021-08-12 半導体装置の作製方法 Active JP7796027B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025272639A JP2026040561A (ja) 2020-08-27 2025-12-22 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020143083 2020-08-27
JP2020143083 2020-08-27
PCT/IB2021/057426 WO2022043809A1 (ja) 2020-08-27 2021-08-12 半導体装置の作製方法

Related Child Applications (1)

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JP2025272639A Division JP2026040561A (ja) 2020-08-27 2025-12-22 半導体装置

Publications (3)

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JPWO2022043809A1 JPWO2022043809A1 (https=) 2022-03-03
JPWO2022043809A5 true JPWO2022043809A5 (https=) 2024-08-02
JP7796027B2 JP7796027B2 (ja) 2026-01-08

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JP2022544874A Active JP7796027B2 (ja) 2020-08-27 2021-08-12 半導体装置の作製方法
JP2025272639A Pending JP2026040561A (ja) 2020-08-27 2025-12-22 半導体装置

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JP2025272639A Pending JP2026040561A (ja) 2020-08-27 2025-12-22 半導体装置

Country Status (5)

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US (1) US20230298906A1 (https=)
JP (2) JP7796027B2 (https=)
KR (1) KR20230054836A (https=)
CN (1) CN116157903A (https=)
WO (1) WO2022043809A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7805298B2 (ja) 2020-08-21 2026-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101511076B1 (ko) * 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
WO2012169397A1 (ja) * 2011-06-07 2012-12-13 シャープ株式会社 薄膜トランジスタ、その製造方法、および表示素子
TWI642193B (zh) * 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US10056497B2 (en) * 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017144994A1 (ja) * 2016-02-22 2017-08-31 株式会社半導体エネルギー研究所 トランジスタおよびその作製方法、半導体ウエハならびに電子機器
JP6968567B2 (ja) * 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20180134919A (ko) * 2016-04-22 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6985812B2 (ja) * 2016-05-04 2021-12-22 株式会社半導体エネルギー研究所 トランジスタの作製方法
WO2020128713A1 (ja) * 2018-12-20 2020-06-25 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
US12218246B2 (en) * 2018-12-28 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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