CN116157903A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN116157903A
CN116157903A CN202180055621.8A CN202180055621A CN116157903A CN 116157903 A CN116157903 A CN 116157903A CN 202180055621 A CN202180055621 A CN 202180055621A CN 116157903 A CN116157903 A CN 116157903A
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CN
China
Prior art keywords
insulator
oxide
conductor
addition
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180055621.8A
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English (en)
Chinese (zh)
Inventor
山崎舜平
小松良宽
伊藤俊一
川口忍
高桥正弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN116157903A publication Critical patent/CN116157903A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
CN202180055621.8A 2020-08-27 2021-08-12 半导体装置的制造方法 Pending CN116157903A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-143083 2020-08-27
JP2020143083 2020-08-27
PCT/IB2021/057426 WO2022043809A1 (ja) 2020-08-27 2021-08-12 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
CN116157903A true CN116157903A (zh) 2023-05-23

Family

ID=80354720

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180055621.8A Pending CN116157903A (zh) 2020-08-27 2021-08-12 半导体装置的制造方法

Country Status (5)

Country Link
US (1) US20230298906A1 (https=)
JP (2) JP7796027B2 (https=)
KR (1) KR20230054836A (https=)
CN (1) CN116157903A (https=)
WO (1) WO2022043809A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7805298B2 (ja) 2020-08-21 2026-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101511076B1 (ko) * 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
WO2012169397A1 (ja) * 2011-06-07 2012-12-13 シャープ株式会社 薄膜トランジスタ、その製造方法、および表示素子
TWI642193B (zh) * 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US10056497B2 (en) * 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017144994A1 (ja) * 2016-02-22 2017-08-31 株式会社半導体エネルギー研究所 トランジスタおよびその作製方法、半導体ウエハならびに電子機器
JP6968567B2 (ja) * 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20180134919A (ko) * 2016-04-22 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6985812B2 (ja) * 2016-05-04 2021-12-22 株式会社半導体エネルギー研究所 トランジスタの作製方法
WO2020128713A1 (ja) * 2018-12-20 2020-06-25 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
US12218246B2 (en) * 2018-12-28 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2026040561A (ja) 2026-03-09
US20230298906A1 (en) 2023-09-21
WO2022043809A1 (ja) 2022-03-03
JP7796027B2 (ja) 2026-01-08
JPWO2022043809A1 (https=) 2022-03-03
KR20230054836A (ko) 2023-04-25

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