JP7796027B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法Info
- Publication number
- JP7796027B2 JP7796027B2 JP2022544874A JP2022544874A JP7796027B2 JP 7796027 B2 JP7796027 B2 JP 7796027B2 JP 2022544874 A JP2022544874 A JP 2022544874A JP 2022544874 A JP2022544874 A JP 2022544874A JP 7796027 B2 JP7796027 B2 JP 7796027B2
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- oxide
- conductor
- oxygen
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
Landscapes
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025272639A JP2026040561A (ja) | 2020-08-27 | 2025-12-22 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020143083 | 2020-08-27 | ||
| JP2020143083 | 2020-08-27 | ||
| PCT/IB2021/057426 WO2022043809A1 (ja) | 2020-08-27 | 2021-08-12 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025272639A Division JP2026040561A (ja) | 2020-08-27 | 2025-12-22 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022043809A1 JPWO2022043809A1 (https=) | 2022-03-03 |
| JPWO2022043809A5 JPWO2022043809A5 (https=) | 2024-08-02 |
| JP7796027B2 true JP7796027B2 (ja) | 2026-01-08 |
Family
ID=80354720
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022544874A Active JP7796027B2 (ja) | 2020-08-27 | 2021-08-12 | 半導体装置の作製方法 |
| JP2025272639A Pending JP2026040561A (ja) | 2020-08-27 | 2025-12-22 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025272639A Pending JP2026040561A (ja) | 2020-08-27 | 2025-12-22 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230298906A1 (https=) |
| JP (2) | JP7796027B2 (https=) |
| KR (1) | KR20230054836A (https=) |
| CN (1) | CN116157903A (https=) |
| WO (1) | WO2022043809A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7805298B2 (ja) | 2020-08-21 | 2026-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012169397A1 (ja) | 2011-06-07 | 2012-12-13 | シャープ株式会社 | 薄膜トランジスタ、その製造方法、および表示素子 |
| WO2017144994A1 (ja) | 2016-02-22 | 2017-08-31 | 株式会社半導体エネルギー研究所 | トランジスタおよびその作製方法、半導体ウエハならびに電子機器 |
| JP2017204637A (ja) | 2016-05-04 | 2017-11-16 | 株式会社半導体エネルギー研究所 | トランジスタおよびその作製方法 |
| WO2020128713A1 (ja) | 2018-12-20 | 2020-06-25 | 株式会社半導体エネルギー研究所 | 単極性トランジスタを用いて構成された論理回路、および、半導体装置 |
| WO2020136467A1 (ja) | 2018-12-28 | 2020-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101511076B1 (ko) * | 2009-12-08 | 2015-04-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| TWI642193B (zh) * | 2012-01-26 | 2018-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| US10056497B2 (en) * | 2015-04-15 | 2018-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6968567B2 (ja) * | 2016-04-22 | 2021-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20180134919A (ko) * | 2016-04-22 | 2018-12-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
-
2021
- 2021-08-12 KR KR1020237006211A patent/KR20230054836A/ko active Pending
- 2021-08-12 WO PCT/IB2021/057426 patent/WO2022043809A1/ja not_active Ceased
- 2021-08-12 JP JP2022544874A patent/JP7796027B2/ja active Active
- 2021-08-12 US US18/021,317 patent/US20230298906A1/en active Pending
- 2021-08-12 CN CN202180055621.8A patent/CN116157903A/zh active Pending
-
2025
- 2025-12-22 JP JP2025272639A patent/JP2026040561A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012169397A1 (ja) | 2011-06-07 | 2012-12-13 | シャープ株式会社 | 薄膜トランジスタ、その製造方法、および表示素子 |
| WO2017144994A1 (ja) | 2016-02-22 | 2017-08-31 | 株式会社半導体エネルギー研究所 | トランジスタおよびその作製方法、半導体ウエハならびに電子機器 |
| JP2017204637A (ja) | 2016-05-04 | 2017-11-16 | 株式会社半導体エネルギー研究所 | トランジスタおよびその作製方法 |
| WO2020128713A1 (ja) | 2018-12-20 | 2020-06-25 | 株式会社半導体エネルギー研究所 | 単極性トランジスタを用いて構成された論理回路、および、半導体装置 |
| WO2020136467A1 (ja) | 2018-12-28 | 2020-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2026040561A (ja) | 2026-03-09 |
| US20230298906A1 (en) | 2023-09-21 |
| WO2022043809A1 (ja) | 2022-03-03 |
| JPWO2022043809A1 (https=) | 2022-03-03 |
| CN116157903A (zh) | 2023-05-23 |
| KR20230054836A (ko) | 2023-04-25 |
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