KR20230054836A - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

Info

Publication number
KR20230054836A
KR20230054836A KR1020237006211A KR20237006211A KR20230054836A KR 20230054836 A KR20230054836 A KR 20230054836A KR 1020237006211 A KR1020237006211 A KR 1020237006211A KR 20237006211 A KR20237006211 A KR 20237006211A KR 20230054836 A KR20230054836 A KR 20230054836A
Authority
KR
South Korea
Prior art keywords
insulator
oxide
conductor
film
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237006211A
Other languages
English (en)
Korean (ko)
Inventor
순페이 야마자키
요시히로 코마츠
슌이치 이토
šœ이치 이토
시노부 카와구치
마사히로 타카하시
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20230054836A publication Critical patent/KR20230054836A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H01L29/66969—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H01L29/78606—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1020237006211A 2020-08-27 2021-08-12 반도체 장치의 제작 방법 Pending KR20230054836A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020143083 2020-08-27
JPJP-P-2020-143083 2020-08-27
PCT/IB2021/057426 WO2022043809A1 (ja) 2020-08-27 2021-08-12 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
KR20230054836A true KR20230054836A (ko) 2023-04-25

Family

ID=80354720

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237006211A Pending KR20230054836A (ko) 2020-08-27 2021-08-12 반도체 장치의 제작 방법

Country Status (5)

Country Link
US (1) US20230298906A1 (https=)
JP (2) JP7796027B2 (https=)
KR (1) KR20230054836A (https=)
CN (1) CN116157903A (https=)
WO (1) WO2022043809A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7805298B2 (ja) 2020-08-21 2026-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101511076B1 (ko) * 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2012169397A1 (ja) * 2011-06-07 2012-12-13 シャープ株式会社 薄膜トランジスタ、その製造方法、および表示素子
TWI642193B (zh) * 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US10056497B2 (en) * 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017144994A1 (ja) * 2016-02-22 2017-08-31 株式会社半導体エネルギー研究所 トランジスタおよびその作製方法、半導体ウエハならびに電子機器
JP6968567B2 (ja) * 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20180134919A (ko) * 2016-04-22 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6985812B2 (ja) * 2016-05-04 2021-12-22 株式会社半導体エネルギー研究所 トランジスタの作製方法
WO2020128713A1 (ja) * 2018-12-20 2020-06-25 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
US12218246B2 (en) * 2018-12-28 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

Also Published As

Publication number Publication date
JP2026040561A (ja) 2026-03-09
US20230298906A1 (en) 2023-09-21
WO2022043809A1 (ja) 2022-03-03
JP7796027B2 (ja) 2026-01-08
JPWO2022043809A1 (https=) 2022-03-03
CN116157903A (zh) 2023-05-23

Similar Documents

Publication Publication Date Title
JP7741277B2 (ja) 半導体装置
JP7730973B2 (ja) 半導体装置の作製方法
JP7629446B2 (ja) 半導体装置
KR20220124700A (ko) 반도체 장치 및 반도체 장치의 제작 방법
JP7787342B2 (ja) 半導体装置
JP7629856B2 (ja) 半導体装置
JP7808724B2 (ja) 半導体装置の作製方法
JP7601761B2 (ja) 半導体装置の作製方法
KR20220092517A (ko) 반도체 장치
JP2026027469A (ja) 半導体装置
KR20230053616A (ko) 반도체 장치의 제작 방법
KR20230050353A (ko) 절연막의 개질 방법 및 반도체 장치의 제작 방법
KR20230054836A (ko) 반도체 장치의 제작 방법
JP7679305B2 (ja) 半導体装置
JP7710994B2 (ja) 半導体装置
KR20230052894A (ko) 금속 산화물의 제조 방법
KR20220119606A (ko) 반도체 장치 및 반도체 장치의 제작 방법
JP7776425B2 (ja) 半導体装置の作製方法
KR20230056695A (ko) 반도체 장치의 제작 방법
KR20240032037A (ko) 트랜지스터
KR20220031020A (ko) 반도체 장치 및 반도체 장치의 제작 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20230222

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20240802

Comment text: Request for Examination of Application