JPWO2022038453A5 - - Google Patents
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- Publication number
- JPWO2022038453A5 JPWO2022038453A5 JP2022543811A JP2022543811A JPWO2022038453A5 JP WO2022038453 A5 JPWO2022038453 A5 JP WO2022038453A5 JP 2022543811 A JP2022543811 A JP 2022543811A JP 2022543811 A JP2022543811 A JP 2022543811A JP WO2022038453 A5 JPWO2022038453 A5 JP WO2022038453A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- forming
- oxide semiconductor
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020138573 | 2020-08-19 | ||
| PCT/IB2021/057243 WO2022038453A1 (ja) | 2020-08-19 | 2021-08-06 | 絶縁膜の改質方法、および半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022038453A1 JPWO2022038453A1 (https=) | 2022-02-24 |
| JPWO2022038453A5 true JPWO2022038453A5 (https=) | 2024-07-26 |
Family
ID=80350457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022543811A Withdrawn JPWO2022038453A1 (https=) | 2020-08-19 | 2021-08-06 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230317832A1 (https=) |
| JP (1) | JPWO2022038453A1 (https=) |
| KR (1) | KR20230050353A (https=) |
| CN (1) | CN116097401A (https=) |
| WO (1) | WO2022038453A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12295163B2 (en) | 2021-12-16 | 2025-05-06 | Asm Ip Holding B.V. | Formation of gate stacks comprising a threshold voltage tuning layer |
| CN118156141A (zh) * | 2024-03-22 | 2024-06-07 | 上海飞埃技术有限公司 | 薄膜晶体管的制作方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6861334B2 (en) * | 2001-06-21 | 2005-03-01 | Asm International, N.V. | Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition |
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| US9006733B2 (en) * | 2012-01-26 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
| US9190525B2 (en) * | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
| JP6968567B2 (ja) * | 2016-04-22 | 2021-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2019047101A (ja) * | 2017-09-05 | 2019-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| KR102668377B1 (ko) * | 2017-12-08 | 2024-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US11031506B2 (en) * | 2018-08-31 | 2021-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor using oxide semiconductor |
| US11508850B2 (en) * | 2018-09-05 | 2022-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US11929426B2 (en) * | 2018-09-05 | 2024-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
-
2021
- 2021-08-06 US US18/019,924 patent/US20230317832A1/en active Pending
- 2021-08-06 KR KR1020237005899A patent/KR20230050353A/ko active Pending
- 2021-08-06 CN CN202180057321.3A patent/CN116097401A/zh active Pending
- 2021-08-06 WO PCT/IB2021/057243 patent/WO2022038453A1/ja not_active Ceased
- 2021-08-06 JP JP2022543811A patent/JPWO2022038453A1/ja not_active Withdrawn
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