CN116097401A - 绝缘膜的改性方法及半导体装置的制造方法 - Google Patents

绝缘膜的改性方法及半导体装置的制造方法 Download PDF

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Publication number
CN116097401A
CN116097401A CN202180057321.3A CN202180057321A CN116097401A CN 116097401 A CN116097401 A CN 116097401A CN 202180057321 A CN202180057321 A CN 202180057321A CN 116097401 A CN116097401 A CN 116097401A
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insulator
oxide
conductor
insulating film
film
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Chinese (zh)
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山崎舜平
井坂史人
饭洼阳一
惠木勇司
神保安弘
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
CN202180057321.3A 2020-08-19 2021-08-06 绝缘膜的改性方法及半导体装置的制造方法 Pending CN116097401A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020138573 2020-08-19
JP2020-138573 2020-08-19
PCT/IB2021/057243 WO2022038453A1 (ja) 2020-08-19 2021-08-06 絶縁膜の改質方法、および半導体装置の作製方法

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CN116097401A true CN116097401A (zh) 2023-05-09

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US (1) US20230317832A1 (https=)
JP (1) JPWO2022038453A1 (https=)
KR (1) KR20230050353A (https=)
CN (1) CN116097401A (https=)
WO (1) WO2022038453A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118156141A (zh) * 2024-03-22 2024-06-07 上海飞埃技术有限公司 薄膜晶体管的制作方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12295163B2 (en) 2021-12-16 2025-05-06 Asm Ip Holding B.V. Formation of gate stacks comprising a threshold voltage tuning layer

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US6861334B2 (en) * 2001-06-21 2005-03-01 Asm International, N.V. Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US9006733B2 (en) * 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9190525B2 (en) * 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
JP6968567B2 (ja) * 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2019047101A (ja) * 2017-09-05 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR102668377B1 (ko) * 2017-12-08 2024-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US11031506B2 (en) * 2018-08-31 2021-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor using oxide semiconductor
US11508850B2 (en) * 2018-09-05 2022-11-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US11929426B2 (en) * 2018-09-05 2024-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118156141A (zh) * 2024-03-22 2024-06-07 上海飞埃技术有限公司 薄膜晶体管的制作方法

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WO2022038453A1 (ja) 2022-02-24
JPWO2022038453A1 (https=) 2022-02-24
KR20230050353A (ko) 2023-04-14

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