KR20230050353A - 절연막의 개질 방법 및 반도체 장치의 제작 방법 - Google Patents

절연막의 개질 방법 및 반도체 장치의 제작 방법 Download PDF

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KR20230050353A
KR20230050353A KR1020237005899A KR20237005899A KR20230050353A KR 20230050353 A KR20230050353 A KR 20230050353A KR 1020237005899 A KR1020237005899 A KR 1020237005899A KR 20237005899 A KR20237005899 A KR 20237005899A KR 20230050353 A KR20230050353 A KR 20230050353A
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South Korea
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insulator
oxide
film
insulating film
conductor
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Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
후미토 이사카
요이치 이이쿠보
유지 에기
야스히로 진보
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20230050353A publication Critical patent/KR20230050353A/ko
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
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    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
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    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
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    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
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    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1020237005899A 2020-08-19 2021-08-06 절연막의 개질 방법 및 반도체 장치의 제작 방법 Pending KR20230050353A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020138573 2020-08-19
JPJP-P-2020-138573 2020-08-19
PCT/IB2021/057243 WO2022038453A1 (ja) 2020-08-19 2021-08-06 絶縁膜の改質方法、および半導体装置の作製方法

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KR20230050353A true KR20230050353A (ko) 2023-04-14

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KR1020237005899A Pending KR20230050353A (ko) 2020-08-19 2021-08-06 절연막의 개질 방법 및 반도체 장치의 제작 방법

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US (1) US20230317832A1 (https=)
JP (1) JPWO2022038453A1 (https=)
KR (1) KR20230050353A (https=)
CN (1) CN116097401A (https=)
WO (1) WO2022038453A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12295163B2 (en) 2021-12-16 2025-05-06 Asm Ip Holding B.V. Formation of gate stacks comprising a threshold voltage tuning layer
CN118156141A (zh) * 2024-03-22 2024-06-07 上海飞埃技术有限公司 薄膜晶体管的制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6861334B2 (en) * 2001-06-21 2005-03-01 Asm International, N.V. Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
US9006733B2 (en) * 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9190525B2 (en) * 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
JP6968567B2 (ja) * 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2019047101A (ja) * 2017-09-05 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR102668377B1 (ko) * 2017-12-08 2024-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US11031506B2 (en) * 2018-08-31 2021-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor using oxide semiconductor
US11508850B2 (en) * 2018-09-05 2022-11-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US11929426B2 (en) * 2018-09-05 2024-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

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US20230317832A1 (en) 2023-10-05
CN116097401A (zh) 2023-05-09
WO2022038453A1 (ja) 2022-02-24
JPWO2022038453A1 (https=) 2022-02-24

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