JPWO2021198836A5 - - Google Patents
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- Publication number
- JPWO2021198836A5 JPWO2021198836A5 JP2022512492A JP2022512492A JPWO2021198836A5 JP WO2021198836 A5 JPWO2021198836 A5 JP WO2021198836A5 JP 2022512492 A JP2022512492 A JP 2022512492A JP 2022512492 A JP2022512492 A JP 2022512492A JP WO2021198836 A5 JPWO2021198836 A5 JP WO2021198836A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gate insulating
- film
- oxide semiconductor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 27
- 239000011229 interlayer Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025014677A JP2025069295A (ja) | 2020-03-31 | 2025-01-31 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020063049 | 2020-03-31 | ||
| JP2020063049 | 2020-03-31 | ||
| JP2020115292 | 2020-07-03 | ||
| JP2020115292 | 2020-07-03 | ||
| PCT/IB2021/052301 WO2021198836A1 (ja) | 2020-03-31 | 2021-03-19 | 半導体装置、および半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025014677A Division JP2025069295A (ja) | 2020-03-31 | 2025-01-31 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021198836A1 JPWO2021198836A1 (https=) | 2021-10-07 |
| JPWO2021198836A5 true JPWO2021198836A5 (https=) | 2024-03-11 |
| JP7629446B2 JP7629446B2 (ja) | 2025-02-13 |
Family
ID=77928415
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022512492A Active JP7629446B2 (ja) | 2020-03-31 | 2021-03-19 | 半導体装置 |
| JP2025014677A Withdrawn JP2025069295A (ja) | 2020-03-31 | 2025-01-31 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025014677A Withdrawn JP2025069295A (ja) | 2020-03-31 | 2025-01-31 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12557366B2 (https=) |
| JP (2) | JP7629446B2 (https=) |
| KR (1) | KR20220160579A (https=) |
| CN (1) | CN115244713A (https=) |
| TW (1) | TWI907400B (https=) |
| WO (1) | WO2021198836A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202329333A (zh) * | 2021-11-30 | 2023-07-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置、半導體裝置的製造方法 |
| US11768237B2 (en) | 2022-05-10 | 2023-09-26 | Google Llc | Leakage screening based on use-case power prediction |
| WO2024165987A1 (en) * | 2023-02-09 | 2024-08-15 | Zinite Corporation | Passivation elements of a thin film transistor |
| CN117979690B (zh) * | 2023-12-22 | 2024-09-27 | 北京超弦存储器研究院 | 一种半导体器件及其制造方法、电子设备 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011036981A1 (en) | 2009-09-24 | 2011-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011062057A1 (en) | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2012014786A1 (en) | 2010-07-30 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semicondcutor device and manufacturing method thereof |
| CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| US20130087784A1 (en) | 2011-10-05 | 2013-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2014013959A1 (en) * | 2012-07-20 | 2014-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR102294507B1 (ko) * | 2013-09-06 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20160102295A (ko) * | 2013-12-26 | 2016-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9443876B2 (en) * | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
| KR102548001B1 (ko) | 2015-07-08 | 2023-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JPWO2017144994A1 (ja) * | 2016-02-22 | 2019-02-14 | 株式会社半導体エネルギー研究所 | トランジスタおよびその作製方法、半導体ウエハならびに電子機器 |
| US10147681B2 (en) * | 2016-12-09 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2019047101A (ja) * | 2017-09-05 | 2019-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| WO2019053573A1 (ja) | 2017-09-15 | 2019-03-21 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JPWO2019171196A1 (ja) | 2018-03-07 | 2021-02-25 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| WO2020049425A1 (ja) | 2018-09-05 | 2020-03-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US10978563B2 (en) | 2018-12-21 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| WO2021064503A1 (ja) | 2019-10-04 | 2021-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN114616681A (zh) | 2019-11-01 | 2022-06-10 | 株式会社半导体能源研究所 | 半导体装置 |
-
2021
- 2021-03-19 CN CN202180019725.3A patent/CN115244713A/zh active Pending
- 2021-03-19 US US17/915,211 patent/US12557366B2/en active Active
- 2021-03-19 KR KR1020227032987A patent/KR20220160579A/ko active Pending
- 2021-03-19 WO PCT/IB2021/052301 patent/WO2021198836A1/ja not_active Ceased
- 2021-03-19 JP JP2022512492A patent/JP7629446B2/ja active Active
- 2021-03-22 TW TW110110172A patent/TWI907400B/zh active
-
2025
- 2025-01-31 JP JP2025014677A patent/JP2025069295A/ja not_active Withdrawn
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