JP2013232567A5 - - Google Patents
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- Publication number
- JP2013232567A5 JP2013232567A5 JP2012104278A JP2012104278A JP2013232567A5 JP 2013232567 A5 JP2013232567 A5 JP 2013232567A5 JP 2012104278 A JP2012104278 A JP 2012104278A JP 2012104278 A JP2012104278 A JP 2012104278A JP 2013232567 A5 JP2013232567 A5 JP 2013232567A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- insulating film
- oxide semiconductor
- oxide
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 claims 18
- 239000010410 layer Substances 0.000 claims 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000011229 interlayer Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012104278A JP2013232567A (ja) | 2012-04-30 | 2012-04-30 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012104278A JP2013232567A (ja) | 2012-04-30 | 2012-04-30 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017209338A Division JP6448743B2 (ja) | 2017-10-30 | 2017-10-30 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013232567A JP2013232567A (ja) | 2013-11-14 |
| JP2013232567A5 true JP2013232567A5 (https=) | 2015-05-21 |
Family
ID=49678743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012104278A Withdrawn JP2013232567A (ja) | 2012-04-30 | 2012-04-30 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013232567A (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9960280B2 (en) * | 2013-12-26 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2015097596A1 (en) * | 2013-12-26 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2015136427A1 (ja) * | 2014-03-14 | 2015-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10522693B2 (en) * | 2015-01-16 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
| JP7078354B2 (ja) * | 2016-05-04 | 2022-05-31 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| JP6985812B2 (ja) * | 2016-05-04 | 2021-12-22 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
| US10586495B2 (en) * | 2016-07-22 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| WO2018235828A1 (ja) | 2017-06-21 | 2018-12-27 | 株式会社村田製作所 | 硫化マグネシウム材料、硫化マグネシウム複合材料、二次電池用の正極部材、ワイドバンドギャップ半導体材料及びマグネシウム二次電池、並びに、閃亜鉛鉱型硫化マグネシウムの製造方法 |
| CN108538848B (zh) * | 2018-06-21 | 2024-01-16 | 长江存储科技有限责任公司 | 半导体结构及其形成方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8044464B2 (en) * | 2007-09-21 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5430846B2 (ja) * | 2007-12-03 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4275720B2 (ja) * | 2008-03-20 | 2009-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US9437454B2 (en) * | 2010-06-29 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Wiring board, semiconductor device, and manufacturing methods thereof |
| KR101311653B1 (ko) * | 2010-07-05 | 2013-09-25 | 샤프 가부시키가이샤 | 박막 트랜지스터 메모리 및 이를 구비한 표시장치 |
| US20120032172A1 (en) * | 2010-08-06 | 2012-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5710918B2 (ja) * | 2010-09-13 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
-
2012
- 2012-04-30 JP JP2012104278A patent/JP2013232567A/ja not_active Withdrawn
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