TWI907400B - 半導體裝置、半導體裝置的製造方法 - Google Patents

半導體裝置、半導體裝置的製造方法

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Publication number
TWI907400B
TWI907400B TW110110172A TW110110172A TWI907400B TW I907400 B TWI907400 B TW I907400B TW 110110172 A TW110110172 A TW 110110172A TW 110110172 A TW110110172 A TW 110110172A TW I907400 B TWI907400 B TW I907400B
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Taiwan
Prior art keywords
insulator
oxide
insulating film
film
conductor
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TW110110172A
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English (en)
Chinese (zh)
Other versions
TW202213796A (zh
Inventor
山崎舜平
小松良寛
水上翔太
川口忍
澤井寛美
山根靖正
恵木勇司
櫻田勇二郎
笹川慎也
Original Assignee
日商半導體能源研究所股份有限公司
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Publication of TW202213796A publication Critical patent/TW202213796A/zh
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    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW110110172A 2020-03-31 2021-03-22 半導體裝置、半導體裝置的製造方法 TWI907400B (zh)

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JP2020-063049 2020-03-31
JP2020063049 2020-03-31
JP2020115292 2020-07-03
JP2020-115292 2020-07-03

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TW202213796A TW202213796A (zh) 2022-04-01
TWI907400B true TWI907400B (zh) 2025-12-11

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US (1) US12557366B2 (https=)
JP (2) JP7629446B2 (https=)
KR (1) KR20220160579A (https=)
CN (1) CN115244713A (https=)
TW (1) TWI907400B (https=)
WO (1) WO2021198836A1 (https=)

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TW202329333A (zh) * 2021-11-30 2023-07-16 日商半導體能源研究所股份有限公司 半導體裝置、半導體裝置的製造方法
US11768237B2 (en) 2022-05-10 2023-09-26 Google Llc Leakage screening based on use-case power prediction
WO2024165987A1 (en) * 2023-02-09 2024-08-15 Zinite Corporation Passivation elements of a thin film transistor
CN117979690B (zh) * 2023-12-22 2024-09-27 北京超弦存储器研究院 一种半导体器件及其制造方法、电子设备

Citations (10)

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