KR20220160579A - 반도체 장치 및 반도체 장치의 제작 방법 - Google Patents

반도체 장치 및 반도체 장치의 제작 방법 Download PDF

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KR20220160579A
KR20220160579A KR1020227032987A KR20227032987A KR20220160579A KR 20220160579 A KR20220160579 A KR 20220160579A KR 1020227032987 A KR1020227032987 A KR 1020227032987A KR 20227032987 A KR20227032987 A KR 20227032987A KR 20220160579 A KR20220160579 A KR 20220160579A
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insulator
oxide
film
insulating film
conductor
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KR1020227032987A
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Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
요시히로 고마츠
쇼타 미즈카미
시노부 가와구치
히로미 사와이
야스마사 야마네
유지 에기
유지로 사쿠라다
신야 사사가와
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220160579A publication Critical patent/KR20220160579A/ko
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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KR1020227032987A 2020-03-31 2021-03-19 반도체 장치 및 반도체 장치의 제작 방법 Pending KR20220160579A (ko)

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JPJP-P-2020-063049 2020-03-31
JP2020063049 2020-03-31
JPJP-P-2020-115292 2020-07-03
JP2020115292 2020-07-03
PCT/IB2021/052301 WO2021198836A1 (ja) 2020-03-31 2021-03-19 半導体装置、および半導体装置の作製方法

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KR20220160579A true KR20220160579A (ko) 2022-12-06

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US (1) US12557366B2 (https=)
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