CN115244713A - 半导体装置、半导体装置的制造方法 - Google Patents

半导体装置、半导体装置的制造方法 Download PDF

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Publication number
CN115244713A
CN115244713A CN202180019725.3A CN202180019725A CN115244713A CN 115244713 A CN115244713 A CN 115244713A CN 202180019725 A CN202180019725 A CN 202180019725A CN 115244713 A CN115244713 A CN 115244713A
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insulator
oxide
insulating film
film
conductor
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Chinese (zh)
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山崎舜平
小松良宽
水上翔太
川口忍
泽井宽美
山根靖正
惠木勇司
樱田勇二郎
笹川慎也
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
CN202180019725.3A 2020-03-31 2021-03-19 半导体装置、半导体装置的制造方法 Pending CN115244713A (zh)

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JP2020-063049 2020-03-31
JP2020063049 2020-03-31
JP2020115292 2020-07-03
JP2020-115292 2020-07-03
PCT/IB2021/052301 WO2021198836A1 (ja) 2020-03-31 2021-03-19 半導体装置、および半導体装置の作製方法

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US (1) US12557366B2 (https=)
JP (2) JP7629446B2 (https=)
KR (1) KR20220160579A (https=)
CN (1) CN115244713A (https=)
TW (1) TWI907400B (https=)
WO (1) WO2021198836A1 (https=)

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TW202329333A (zh) * 2021-11-30 2023-07-16 日商半導體能源研究所股份有限公司 半導體裝置、半導體裝置的製造方法
US11768237B2 (en) 2022-05-10 2023-09-26 Google Llc Leakage screening based on use-case power prediction
WO2024165987A1 (en) * 2023-02-09 2024-08-15 Zinite Corporation Passivation elements of a thin film transistor
CN117979690B (zh) * 2023-12-22 2024-09-27 北京超弦存储器研究院 一种半导体器件及其制造方法、电子设备

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